Sergey V. Barabash

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Current compliance layers and memory arrays comprising thereof
- Patent number 10,833,263
- Issue date Nov 10, 2020
- Intermolecular, Inc.
- Tony Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current compliance layers and memory arrays comprising thereof
- Patent number 10,580,978
- Issue date Mar 3, 2020
- Intermolecular, Inc.
- Tony Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
All around electrode for novel 3D RRAM applications
- Patent number 9,620,205
- Issue date Apr 11, 2017
- Intermolecular, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Hydrogenated amorphous silicon dielectric for superconducting devices
- Patent number 9,593,414
- Issue date Mar 14, 2017
- Intermolecular, Inc.
- Sergey Barabash
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Superconducting circuits with reduced microwave absorption
- Patent number 9,455,073
- Issue date Sep 27, 2016
- Intermolecular, Inc.
- Sergey Barabash
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Zinc blende cadmium—manganese—telluride with reduced hole compensat...
- Patent number 9,431,569
- Issue date Aug 30, 2016
- First Solar, Inc.
- Sergey Barabash
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Electrode for low-leakage devices
- Patent number 9,245,941
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching conditions for resistive random access memory cells
- Patent number 9,240,236
- Issue date Jan 19, 2016
- Intermolecular, Inc.
- Sergey Barabash
- G11 - INFORMATION STORAGE
Information Patent Grant
Deposition of rutile films with very high dielectric constant
- Patent number 9,222,170
- Issue date Dec 29, 2015
- Intermolecular, Inc.
- Sergey Barabash
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Capacitors including inner and outer electrodes
- Patent number 9,224,799
- Issue date Dec 29, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon doped with fluorine for selectors of resistive ra...
- Patent number 9,177,916
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of anisotropic dielectric layers orientationally matched...
- Patent number 9,178,011
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing films with narrow-band conductive properties
- Patent number 9,105,704
- Issue date Aug 11, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier design for steering elements
- Patent number 9,019,744
- Issue date Apr 28, 2015
- Intermolecular, Inc.
- Sergey Barabash
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling ReRam forming voltage with doping
- Patent number 9,012,260
- Issue date Apr 21, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fullerene-based capacitor electrode
- Patent number 8,975,134
- Issue date Mar 10, 2015
- Intermolecular, Inc.
- Sergey Barabash
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Controlling ReRam forming voltage with doping
- Patent number 8,907,313
- Issue date Dec 9, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MoOx-based resistance switching materials
- Patent number 8,907,314
- Issue date Dec 9, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to improve leakage of high K materials
- Patent number 8,846,468
- Issue date Sep 30, 2014
- Intermolecular, Inc.
- Xiangxin Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step deposition of molybdenum dioxide electrode for high qualit...
- Patent number 8,835,310
- Issue date Sep 16, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to improve leakage of high K materials
- Patent number 8,766,346
- Issue date Jul 1, 2014
- Intermolecular, Inc.
- Xiangxin Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device design for partially oriented rutile dielectrics
- Patent number 8,766,404
- Issue date Jul 1, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Current Compliance Layers and Memory Arrays Comprising Thereof
- Publication number 20200152867
- Publication date May 14, 2020
- Tony CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
Current Compliance Layers and Memory Arrays Comprising Thereof
- Publication number 20180198064
- Publication date Jul 12, 2018
- Intermolecular, Inc.
- Tony Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selector Elements
- Publication number 20170104031
- Publication date Apr 13, 2017
- Intermolecular, Inc.
- Mark Clark
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Forming Ferroelectric Phases in Materials and Devices U...
- Publication number 20160181091
- Publication date Jun 23, 2016
- Intermolecular, Inc.
- Sandip Niyogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superconducting Circuits with Reduced Microwave Absorption
- Publication number 20150313046
- Publication date Oct 29, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogenated Amorphous Silicon Dielectric for Superconducting Devices
- Publication number 20150184286
- Publication date Jul 2, 2015
- Intermolecular, Inc.
- Sergey Barabash
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Zinc Blende Cadmium-Manganese-Telluride with Reduced Hole Compensat...
- Publication number 20150187982
- Publication date Jul 2, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitors Including Inner and Outer Electrodes
- Publication number 20150187865
- Publication date Jul 2, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluorine Passivation During Deposition of Dielectrics for Supercond...
- Publication number 20150179915
- Publication date Jun 25, 2015
- Intermolecular, Inc.
- Frank Greer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Controlling ReRam Forming Voltage with Doping
- Publication number 20150064873
- Publication date Mar 5, 2015
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
All around electrode for novel 3D RRAM applications
- Publication number 20150016178
- Publication date Jan 15, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nano...
- Publication number 20140264224
- Publication date Sep 18, 2014
- Intermolecular, Inc.
- Xuena Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
Electrode for Low-Leakage Devices
- Publication number 20140273427
- Publication date Sep 18, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluorine Passivation in CMOS Image Sensors
- Publication number 20140264507
- Publication date Sep 18, 2014
- Intermolecular, Inc.
- Mankoo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition of Anisotropic Dielectric Layers Orientationally Matched...
- Publication number 20140264747
- Publication date Sep 18, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE DESIGN FOR PARTIALLY ORIENTED RUTILE DIELECTRICS
- Publication number 20140191365
- Publication date Jul 10, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MoOx-Based Resistance Switching Materials
- Publication number 20140183432
- Publication date Jul 3, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fullerene-Based Capacitor Electrode
- Publication number 20140183664
- Publication date Jul 3, 2014
- Intermolecular, Inc.
- Sergey Barabash
- B82 - NANO-TECHNOLOGY
Information Patent Application
Barrier Design for Steering Elements
- Publication number 20140185357
- Publication date Jul 3, 2014
- Intermolecular, Inc.
- Sergey Barabash
- G11 - INFORMATION STORAGE
Information Patent Application
Two Step Deposition of Molybdenum Dioxide Electrode for High Qualit...
- Publication number 20140175604
- Publication date Jun 26, 2014
- Intermolecular, Inc.
- Sergey Barabash
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Deposition of Rutile Films with Very High Dielectric Constant
- Publication number 20140175422
- Publication date Jun 26, 2014
- Intermolecular, Inc.
- Sergey Barabash
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Depositing Films with Narrow-Band Conductive Properties
- Publication number 20140175567
- Publication date Jun 26, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlling ReRam Forming Voltage with Doping
- Publication number 20140166958
- Publication date Jun 19, 2014
- Intermolecular, Inc.
- Sergey Barabash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods to Improve Leakage of High K Materials
- Publication number 20140170833
- Publication date Jun 19, 2014
- Elpida Memory, Inc.
- Xiangxin Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO IMPROVE LEAKAGE OF HIGH K MATERIALS
- Publication number 20140167221
- Publication date Jun 19, 2014
- Elpida Memory, Inc.
- Xiangxin Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Back-Contact Electron Reflectors Enhancing Thin Film Solar Cell Eff...
- Publication number 20140166107
- Publication date Jun 19, 2014
- Intermolecular, Inc.
- Mankoo Lee
- H01 - BASIC ELECTRIC ELEMENTS

Sergey V. Barabash

Person

Patents Grantslast 30 patents

Current compliance layers and memory arrays comprising thereof

Current compliance layers and memory arrays comprising thereof

All around electrode for novel 3D RRAM applications

Hydrogenated amorphous silicon dielectric for superconducting devices

Superconducting circuits with reduced microwave absorption

Zinc blende cadmium—manganese—telluride with reduced hole compensat...

Electrode for low-leakage devices

Switching conditions for resistive random access memory cells

Deposition of rutile films with very high dielectric constant

Capacitors including inner and outer electrodes

Amorphous silicon doped with fluorine for selectors of resistive ra...

Deposition of anisotropic dielectric layers orientationally matched...

Method of depositing films with narrow-band conductive properties

Barrier design for steering elements

Controlling ReRam forming voltage with doping

Fullerene-based capacitor electrode

Controlling ReRam forming voltage with doping

MoOx-based resistance switching materials

Methods to improve leakage of high K materials

Two step deposition of molybdenum dioxide electrode for high qualit...

Methods to improve leakage of high K materials

Device design for partially oriented rutile dielectrics

Patents Applicationslast 30 patents

Current Compliance Layers and Memory Arrays Comprising Thereof

Current Compliance Layers and Memory Arrays Comprising Thereof

Selector Elements

Methods for Forming Ferroelectric Phases in Materials and Devices U...

Superconducting Circuits with Reduced Microwave Absorption

Hydrogenated Amorphous Silicon Dielectric for Superconducting Devices

Zinc Blende Cadmium-Manganese-Telluride with Reduced Hole Compensat...

Capacitors Including Inner and Outer Electrodes

Fluorine Passivation During Deposition of Dielectrics for Supercond...

Controlling ReRam Forming Voltage with Doping

All around electrode for novel 3D RRAM applications

Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nano...

Electrode for Low-Leakage Devices

Fluorine Passivation in CMOS Image Sensors

Deposition of Anisotropic Dielectric Layers Orientationally Matched...

DEVICE DESIGN FOR PARTIALLY ORIENTED RUTILE DIELECTRICS

MoOx-Based Resistance Switching Materials

Fullerene-Based Capacitor Electrode

Barrier Design for Steering Elements

Two Step Deposition of Molybdenum Dioxide Electrode for High Qualit...

Deposition of Rutile Films with Very High Dielectric Constant

Method of Depositing Films with Narrow-Band Conductive Properties

Controlling ReRam Forming Voltage with Doping

Methods to Improve Leakage of High K Materials

METHODS TO IMPROVE LEAKAGE OF HIGH K MATERIALS

Back-Contact Electron Reflectors Enhancing Thin Film Solar Cell Eff...