Seshubabu Desu

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Conductive amorphous oxide contact layers
- Patent number 11,600,775
- Issue date Mar 7, 2023
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having an oxide barrier layer
- Patent number 11,508,905
- Issue date Nov 22, 2022
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive amorphous oxide contact layers
- Patent number 11,133,464
- Issue date Sep 28, 2021
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a template layer
- Patent number 11,043,633
- Issue date Jun 22, 2021
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having an oxide barrier layer
- Patent number 10,950,788
- Issue date Mar 16, 2021
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,862,028
- Issue date Dec 8, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,847,717
- Issue date Nov 24, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a conductive barrier layer
- Patent number 10,833,262
- Issue date Nov 10, 2020
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having side barriers
- Patent number 10,734,578
- Issue date Aug 4, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having ohmic contacts
- Patent number 10,734,576
- Issue date Aug 4, 2020
- 4D-S, Ltd.
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,734,577
- Issue date Aug 4, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,622,559
- Issue date Apr 14, 2020
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a retention layer
- Patent number 10,381,558
- Issue date Aug 13, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,319,907
- Issue date Jun 11, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONDUCTIVE AMORPHOUS OXIDE CONTACT LAYERS
- Publication number 20220013721
- Publication date Jan 13, 2022
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING AN OXIDE BARRIER LAYER
- Publication number 20210193919
- Publication date Jun 24, 2021
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING AN OXIDE BARRIER LAYER
- Publication number 20210057644
- Publication date Feb 25, 2021
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE AMORPHOUS OXIDE CONTACT LAYERS
- Publication number 20210057646
- Publication date Feb 25, 2021
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20210050516
- Publication date Feb 18, 2021
- 4D-S, LTD
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036220
- Publication date Feb 4, 2021
- 4DS Memory, Limited
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20210036219
- Publication date Feb 4, 2021
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190326512
- Publication date Oct 24, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR IO...
- Publication number 20190319185
- Publication date Oct 17, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING SIDE BARRIERS
- Publication number 20190319186
- Publication date Oct 17, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS
- Publication number 20190288197
- Publication date Sep 19, 2019
- 4D-S, LTD
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288198
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20190288196
- Publication date Sep 19, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288199
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
- Publication number 20190288200
- Publication date Sep 19, 2019
- 4DS Memory, Limited
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS

Seshubabu Desu

Person

Patents Grantslast 30 patents

Conductive amorphous oxide contact layers

Resistive memory device having an oxide barrier layer

Conductive amorphous oxide contact layers

Resistive memory device having a template layer

Resistive memory device having an oxide barrier layer

Resistive memory device having a template layer

Resistive memory device having a template layer

Resistive memory device having a conductive barrier layer

Resistive memory device having side barriers

Resistive memory device having ohmic contacts

Resistive memory device having a template layer

Resistive memory device having a template layer

Resistive memory device having a retention layer

Resistive memory device having a template layer

Patents Applicationslast 30 patents

CONDUCTIVE AMORPHOUS OXIDE CONTACT LAYERS

RESISTIVE MEMORY DEVICE HAVING AN OXIDE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING AN OXIDE BARRIER LAYER

CONDUCTIVE AMORPHOUS OXIDE CONTACT LAYERS

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR IO...

RESISTIVE MEMORY DEVICE HAVING SIDE BARRIERS

RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER