Setsuo Okamoto

Person

Nishinomiya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Titanium target for sputtering and method of manufacturing same
- Patent number 5,952,086
- Issue date Sep 14, 1999
- Sumitomo Sitix of Amagasaki, Inc.
- Takashi Ohnishi
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Process for producing single crystals
- Patent number 5,683,505
- Issue date Nov 4, 1997
- Sumitomo Sitix Corporation
- Kaoru Kuramochi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing single crystals
- Patent number 5,611,857
- Issue date Mar 18, 1997
- Sumitomo Sitix Corporation
- Yoshihiro Akashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing single crystals
- Patent number 5,575,847
- Issue date Nov 19, 1996
- Sumitomo Sitix Corporation
- Kaoru Kuramochi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing single crystal
- Patent number 5,551,978
- Issue date Sep 3, 1996
- Sumitomo Sitix Corporation
- Yoshihiro Akashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing silison single crystal
- Patent number 5,477,806
- Issue date Dec 26, 1995
- Sumitomo Sitix Corporation
- Yoshihiro Akashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon single crystals
- Patent number 5,474,019
- Issue date Dec 12, 1995
- Sumitomo Sitix Corporation
- Yoshihiro Akashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing single crystal
- Patent number 5,435,263
- Issue date Jul 25, 1995
- Sumitomo Sitix Corporation
- Yoshihiro Akashi
- C30 - CRYSTAL GROWTH

Setsuo Okamoto

Person

Patents Grantslast 30 patents

Titanium target for sputtering and method of manufacturing same

Process for producing single crystals

Apparatus for producing single crystals

Apparatus for producing single crystals

Apparatus for producing single crystal

Method of producing silison single crystal

Process for producing silicon single crystals

Method of producing single crystal