Seung-Yeul Yang

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device containing ferroelectric memory ele...
- Patent number 11,309,332
- Issue date Apr 19, 2022
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including ferroelectric-metal-insul...
- Patent number 11,302,716
- Issue date Apr 12, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including ferroelectric-metal-insul...
- Patent number 11,282,848
- Issue date Mar 22, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing epitaxial ferroelectric...
- Patent number 11,239,254
- Issue date Feb 1, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric tunnel junction memory device with integrated ovonic...
- Patent number 11,121,140
- Issue date Sep 14, 2021
- SanDisk Technologies LLC
- Seung-Yeul Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory devices including a stack of ferroelectric and...
- Patent number 11,024,648
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing ferroelectric memory ele...
- Patent number 10,937,809
- Issue date Mar 2, 2021
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional phase change memory array including discrete midd...
- Patent number 10,381,409
- Issue date Aug 13, 2019
- SanDisk Technologies LLC
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional phase change memory array including discrete midd...
- Patent number 10,381,559
- Issue date Aug 13, 2019
- SanDisk Technologies LLC
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...
- Publication number 20210358952
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...
- Publication number 20210358931
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE WITH INTEGRATED OVONIC...
- Publication number 20210210497
- Publication date Jul 8, 2021
- SANDISK TECHNOLOGIES LLC
- Seung-Yeul Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING FERROELECTRIC MEMORY ELE...
- Publication number 20210082955
- Publication date Mar 18, 2021
- SANDISK TECHNOLOGIES LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICES INCLUDING A STACK OF FERROELECTRIC AND...
- Publication number 20210050372
- Publication date Feb 18, 2021
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING FERROELECTRIC MEMORY ELE...
- Publication number 20210050371
- Publication date Feb 18, 2021
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING EPITAXIAL FERROELECTRIC...
- Publication number 20210036019
- Publication date Feb 4, 2021
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS

Seung-Yeul Yang

Person

Patents Grantslast 30 patents

Three-dimensional memory device containing ferroelectric memory ele...

Three-dimensional memory device including ferroelectric-metal-insul...

Three-dimensional memory device including ferroelectric-metal-insul...

Three-dimensional memory device containing epitaxial ferroelectric...

Ferroelectric tunnel junction memory device with integrated ovonic...

Ferroelectric memory devices including a stack of ferroelectric and...

Three-dimensional memory device containing ferroelectric memory ele...

Three-dimensional phase change memory array including discrete midd...

Three-dimensional phase change memory array including discrete midd...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE WITH INTEGRATED OVONIC...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING FERROELECTRIC MEMORY ELE...

FERROELECTRIC MEMORY DEVICES INCLUDING A STACK OF FERROELECTRIC AND...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING FERROELECTRIC MEMORY ELE...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING EPITAXIAL FERROELECTRIC...