Seungchan Yun

Person

Waterford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 12,094,869
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 11,764,207
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...
- Publication number 20240395900
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING INTERGATE SPACER AND METHODS O...
- Publication number 20240371880
- Publication date Nov 7, 2024
- SAMSUNG ELECTRONICS CO,. LTD.
- SEUNGCHAN YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...
- Publication number 20240363633
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- MYUNG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240363491
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- SEUNGCHAN YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT STRUCTURE
- Publication number 20240290689
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING 3D-STACKED FIELD-EFFECT TRANSISTORS...
- Publication number 20240282855
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- Myunghoon JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED TRANSISTOR STRUCTURE WITH BARRIER LAYER BETWEEN UPPER GA...
- Publication number 20240243172
- Publication date Jul 18, 2024
- Samsung Electronics Co., Ltd.
- Jaejik Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE...
- Publication number 20240162309
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Myung YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240096984
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Jongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...
- Publication number 20240096889
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Seung Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240079329
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- EUN SUNG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHOD...
- Publication number 20240072048
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240063122
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- SEUNGCHAN YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE
- Publication number 20240023326
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Byounghak HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230378164
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL LAYER INTE...
- Publication number 20230352529
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Gunho JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FORMED OF...
- Publication number 20230343824
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG I...
- Publication number 20230343845
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Byounghak HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEP-STACKED NANOWIRE CMOS STRUCTURE FOR LOW POWER LOGIC DEVICE AND...
- Publication number 20230335556
- Publication date Oct 19, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED ELEMENTS AND METHODS O...
- Publication number 20230275021
- Publication date Aug 31, 2023
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK...
- Publication number 20230163202
- Publication date May 25, 2023
- Samsung Electronics Co., Ltd.
- Jaehong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR STRUCTURES OF INTEGRATED CIRCUIT DEVICES INCLUDING STACKED...
- Publication number 20230135219
- Publication date May 4, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE
- Publication number 20230101171
- Publication date Mar 30, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A METAL RESISTOR AND METHODS O...
- Publication number 20230095421
- Publication date Mar 30, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...
- Publication number 20230086084
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230092061
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A COMMON GATE ELECTRODE AND ME...
- Publication number 20230049816
- Publication date Feb 16, 2023
- Samsung Electronics Co., Ltd.
- SOOYOUNG PARK
- H01 - BASIC ELECTRIC ELEMENTS

Seungchan Yun

Person

Patents Grantslast 30 patents

Diode structures of stacked devices and methods of forming the same

Diode structures of stacked devices and methods of forming the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...

INTEGRATED CIRCUIT DEVICES INCLUDING INTERGATE SPACER AND METHODS O...

INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING 3D-STACKED FIELD-EFFECT TRANSISTORS...

3D-STACKED TRANSISTOR STRUCTURE WITH BARRIER LAYER BETWEEN UPPER GA...

3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHOD...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE

DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME

3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL LAYER INTE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FORMED OF...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG I...

STEP-STACKED NANOWIRE CMOS STRUCTURE FOR LOW POWER LOGIC DEVICE AND...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED ELEMENTS AND METHODS O...

FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK...

RESISTOR STRUCTURES OF INTEGRATED CIRCUIT DEVICES INCLUDING STACKED...

MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE

INTEGRATED CIRCUIT DEVICES INCLUDING A METAL RESISTOR AND METHODS O...

STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...

DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING A COMMON GATE ELECTRODE AND ME...