Seungmoo Choi

Person

Orlando, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a silicon on insulator transistor structure f...
- Patent number 6,890,827
- Issue date May 10, 2005
- Agere Systems Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MOS device with halo implanted region
- Patent number 6,762,459
- Issue date Jul 13, 2004
- Agere Systems Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical DRAM device with channel access transistor and stacked sto...
- Patent number 6,603,168
- Issue date Aug 5, 2003
- Agere Systems Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity film for 4T SRAM
- Patent number 6,586,310
- Issue date Jul 1, 2003
- Agere Systems Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for forming semiconductor interconnections in an...
- Patent number 6,503,787
- Issue date Jan 7, 2003
- Agere Systems Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having self-aligned contact and landing pad st...
- Patent number 6,483,144
- Issue date Nov 19, 2002
- Agere Systems Guardian Corp.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contactless local interconnect process utilizing self-aligned silicide
- Patent number 6,468,899
- Issue date Oct 22, 2002
- Agere Systems Guardian Corp.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a DRAM capacitor having a high dielectric consta...
- Patent number 6,376,302
- Issue date Apr 23, 2002
- Agere Systems Guardian Corp.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MOS device with halo implanted region
- Patent number 6,362,054
- Issue date Mar 26, 2002
- Agere Systems Guardian Corp.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier for use with high dielectric constant materials a...
- Patent number 6,340,827
- Issue date Jan 22, 2002
- Agere Systems Guardian Corp.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device having dual damascene capacitor
- Patent number 6,320,244
- Issue date Nov 20, 2001
- Agere Systems Guardian Corp.
- Glenn B. Alers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device
- Patent number 6,274,409
- Issue date Aug 14, 2001
- Agere Systems Guardian Corp.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for forming semiconductor interconnections in an...
- Patent number 6,215,158
- Issue date Apr 10, 2001
- Lucent Technologies Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation method
- Patent number 6,191,001
- Issue date Feb 20, 2001
- Lucent Technologies, Inc.
- Alan Sangone Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM capacitor including Cu plug and Ta barrier and method of forming
- Patent number 6,168,991
- Issue date Jan 2, 2001
- Lucent Technologies Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrate DRAM cell having a DRAM capacitor and a transistor
- Patent number 6,072,210
- Issue date Jun 6, 2000
- Lucent Technologies Inc.
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for fabricating MOS device with halo implanted region
- Publication number 20020055212
- Publication date May 9, 2002
- Lucent Technologies
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon on insulator transistor structure for imbedded DRAM
- Publication number 20020019096
- Publication date Feb 14, 2002
- Seungmoo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND LANDING PAD ST...
- Publication number 20020000601
- Publication date Jan 3, 2002
- SEUNGMOO CHOI
- H01 - BASIC ELECTRIC ELEMENTS

Seungmoo Choi

Person

Patents Grantslast 30 patents

Method of fabricating a silicon on insulator transistor structure f...

Method for fabricating MOS device with halo implanted region

Vertical DRAM device with channel access transistor and stacked sto...

High resistivity film for 4T SRAM

Device and method for forming semiconductor interconnections in an...

Semiconductor device having self-aligned contact and landing pad st...

Contactless local interconnect process utilizing self-aligned silicide

Method for forming a DRAM capacitor having a high dielectric consta...

Method for fabricating MOS device with halo implanted region

Diffusion barrier for use with high dielectric constant materials a...

Integrated circuit device having dual damascene capacitor

Method for making a semiconductor device

Device and method for forming semiconductor interconnections in an...

Shallow trench isolation method

DRAM capacitor including Cu plug and Ta barrier and method of forming

Integrate DRAM cell having a DRAM capacitor and a transistor

Patents Applicationslast 30 patents

Method for fabricating MOS device with halo implanted region

Silicon on insulator transistor structure for imbedded DRAM

SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND LANDING PAD ST...