Shahab Siddiqui

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 12,068,415
- Issue date Aug 20, 2024
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks with multiple high-κ dielectric layers
- Patent number 11,961,895
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,888,048
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor having an oxygen-blocking layer
- Patent number 11,876,124
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 11,515,427
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor having an oxygen-blocking top spacer
- Patent number 11,476,346
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,211,474
- Issue date Dec 28, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for forming a FinFET device comprisin...
- Patent number 10,438,853
- Issue date Oct 8, 2019
- GLOBALFOUNDRIES Inc.
- Shahab Siddiqui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and structure to form high K metal gate stack with single w...
- Patent number 10,395,993
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide formation through hybrid methods of thermal and depositi...
- Patent number 10,361,289
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal oxide equivalent low temperature ALD oxide for dual purpose...
- Patent number 10,106,892
- Issue date Oct 23, 2018
- GLOBALFOUNDRIES Inc.
- Shahab Siddiqui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuit structure having thin gate dielectric device and...
- Patent number 9,806,161
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TSV deep trench capacitor and anti-fuse structure
- Patent number 9,741,657
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Ronald G. Filippi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FIN...
- Patent number 9,741,720
- Issue date Aug 22, 2017
- GLOBALFOUNDRIES Inc.
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of higher-K dielectrics
- Patent number 9,673,108
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structure to form high K metal gate stack with single w...
- Patent number 9,515,164
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of higher-k dielectrics
- Patent number 9,478,425
- Issue date Oct 25, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple thickness gate dielectrics for replacement gate field effe...
- Patent number 9,368,593
- Issue date Jun 14, 2016
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-plasma nitridation process for a gate dielectric
- Patent number 9,252,232
- Issue date Feb 2, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K dielectric structure for deep trench isolation
- Patent number 9,224,740
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- Sean M. Polvino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple thickness gate dielectrics for replacement gate field effe...
- Patent number 9,224,826
- Issue date Dec 29, 2015
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-plasma nitridation process for a gate dielectric
- Patent number 9,196,700
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing oxide gate dielectric layers for replacement metal gate f...
- Patent number 9,177,868
- Issue date Nov 3, 2015
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing scaled equivalent oxide thickness gate stac...
- Patent number 9,099,461
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having different gate oxide thicknesses
- Patent number 9,087,722
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of Tinv scaling for high k metal gate technology
- Patent number 9,087,784
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for replacement gate MOSFET with self-aligned...
- Patent number 9,040,369
- Issue date May 26, 2015
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite high-k gate dielectric stack for reducing gate leakage
- Patent number 9,029,959
- Issue date May 12, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of Tinv scaling for high k metal gate technology
- Patent number 9,006,837
- Issue date Apr 14, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-plasma nitridation process for a gate dielectric
- Patent number 9,006,064
- Issue date Apr 14, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASYMMETRIC GATE CONTACT OVER SOURCE/DRAIN CONTACT
- Publication number 20240332182
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...
- Publication number 20240105769
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bottom Air Spacer by Oxidation
- Publication number 20230107182
- Publication date Apr 6, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACKS WITH MULTIPLE HIGH-K DIELECTRIC LAYERS
- Publication number 20230075740
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20230029561
- Publication date Feb 2, 2023
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING LAYER
- Publication number 20220336627
- Publication date Oct 20, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20220069104
- Publication date Mar 3, 2022
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING TOP SPACER
- Publication number 20210408261
- Publication date Dec 30, 2021
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20210391473
- Publication date Dec 16, 2021
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20210217873
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPAC...
- Publication number 20190326112
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Shahab SIDDIQUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL
- Publication number 20190318966
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...
- Publication number 20190305105
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES INC.
- Qun GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR FORMING A FINFET DEVICE COMPRISIN...
- Publication number 20190157157
- Publication date May 23, 2019
- GLOBALFOUNDRIES INC.
- Shahab Siddiqui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...
- Publication number 20170294519
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF HIGHER-K DIELECTRICS
- Publication number 20170170077
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...
- Publication number 20170025315
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...
- Publication number 20160027893
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALING OXIDE GATE DIELECTRIC LAYERS FOR REPLACEMENT METAL GATE F...
- Publication number 20150279744
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...
- Publication number 20150255463
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TSV DEEP TRENCH CAPACITOR AND ANTI-FUSE STRUCTURE
- Publication number 20150235944
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Ronald G. Filippi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...
- Publication number 20150228747
- Publication date Aug 13, 2015
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC
- Publication number 20150187901
- Publication date Jul 2, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC
- Publication number 20150179459
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES
- Publication number 20150069525
- Publication date Mar 12, 2015
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC
- Publication number 20140252503
- Publication date Sep 11, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY
- Publication number 20140170844
- Publication date Jun 19, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND H...
- Publication number 20140061819
- Publication date Mar 6, 2014
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM INPUT/OUTPUT DEVICES
- Publication number 20140042546
- Publication date Feb 13, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES
- Publication number 20140001575
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Charlotte DeWan Adams
- H01 - BASIC ELECTRIC ELEMENTS

Shahab Siddiqui

Person

Patents Grantslast 30 patents

Precise bottom junction formation for vertical transport field effe...

Gate stacks with multiple high-κ dielectric layers

Gate oxide for nanosheet transistor devices

Vertical transistor having an oxygen-blocking layer

Precise bottom junction formation for vertical transport field effe...

Vertical transistor having an oxygen-blocking top spacer

Gate oxide for nanosheet transistor devices

Methods, apparatus and system for forming a FinFET device comprisin...

Methods and structure to form high K metal gate stack with single w...

Gate oxide formation through hybrid methods of thermal and depositi...

Thermal oxide equivalent low temperature ALD oxide for dual purpose...

Integrated circuit structure having thin gate dielectric device and...

TSV deep trench capacitor and anti-fuse structure

Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FIN...

Fabrication of higher-K dielectrics

Methods and structure to form high K metal gate stack with single w...

Fabrication of higher-k dielectrics

Multiple thickness gate dielectrics for replacement gate field effe...

Multi-plasma nitridation process for a gate dielectric

High-K dielectric structure for deep trench isolation

Multiple thickness gate dielectrics for replacement gate field effe...

Multi-plasma nitridation process for a gate dielectric

Annealing oxide gate dielectric layers for replacement metal gate f...

Method of manufacturing scaled equivalent oxide thickness gate stac...

Semiconductor devices having different gate oxide thicknesses

Structure and method of Tinv scaling for high k metal gate technology

Structure and method for replacement gate MOSFET with self-aligned...

Composite high-k gate dielectric stack for reducing gate leakage

Structure and method of Tinv scaling for high k metal gate technology

Multi-plasma nitridation process for a gate dielectric

Patents Applicationslast 30 patents

ASYMMETRIC GATE CONTACT OVER SOURCE/DRAIN CONTACT

STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...

Bottom Air Spacer by Oxidation

GATE STACKS WITH MULTIPLE HIGH-K DIELECTRIC LAYERS

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING LAYER

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING TOP SPACER

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPAC...

HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL

GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...

METHODS, APPARATUS AND SYSTEM FOR FORMING A FINFET DEVICE COMPRISIN...

INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...

FABRICATION OF HIGHER-K DIELECTRICS

METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...

MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...

ANNEALING OXIDE GATE DIELECTRIC LAYERS FOR REPLACEMENT METAL GATE F...

METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...

TSV DEEP TRENCH CAPACITOR AND ANTI-FUSE STRUCTURE

MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...

MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC

MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC

SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES

MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC

STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY

GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND H...

STRUCTURE AND METHOD TO FORM INPUT/OUTPUT DEVICES

SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES