Shahrukh A. Khan

Person

Danbury, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structure having thin gate dielectric device and...
- Patent number 9,806,161
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack for integrated circuit structure and method of forming same
- Patent number 9,748,235
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using tensile mask to minimize buckling in substrate
- Patent number 9,741,581
- Issue date Aug 22, 2017
- GLOBALFOUNDRIES Inc.
- Sunit S. Mahajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor fin with carbon dopant for diffusi...
- Patent number 9,685,334
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seamless metallization contacts
- Patent number 9,633,946
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Jim Shih-Chun Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of finFET junction
- Patent number 9,431,485
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES, INC.
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- Publication number 20250098322
- Publication date Mar 20, 2025
- International Business Machines Corporation
- HUIMEI ZHOU
Information Patent Application
EXTENDED BACKSIDE CONTACT IN STACK NANOSHEET
- Publication number 20250031430
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Shahrukh Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL
- Publication number 20250006736
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- Publication number 20240429270
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- Publication number 20240429226
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH METAL VIAS
- Publication number 20240413085
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED FIN TO REDUCE FIN BENDING
- Publication number 20190019862
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES INC.
- A K M Zahidur Rahim CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS CARBON LAYER FOR COBALT ETCH PROTECTION IN DUAL DAMASCENE...
- Publication number 20180019162
- Publication date Jan 18, 2018
- GLOBALFOUNDRIES INC.
- Shafaat AHMED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...
- Publication number 20170294519
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20170221889
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING TENSILE MASK TO MINIMIZE BUCKLING IN SUBSTRATE
- Publication number 20170200614
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Sunit S. Mahajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE PATTERNING METHOD FOR SUBSTRATE
- Publication number 20170170016
- Publication date Jun 15, 2017
- GLOBALFOUNDRIES INC.
- Woo-Hyeong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20160181367
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS

Shahrukh A. Khan

Person

Patents Grantslast 30 patents

Integrated circuit structure having thin gate dielectric device and...

Gate stack for integrated circuit structure and method of forming same

Using tensile mask to minimize buckling in substrate

Methods of forming semiconductor fin with carbon dopant for diffusi...

Seamless metallization contacts

Formation of finFET junction

Patents Applicationslast 30 patents

METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)

EXTENDED BACKSIDE CONTACT IN STACK NANOSHEET

STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL

METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)

PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

STACKED TRANSISTORS WITH METAL VIAS

COALESCED FIN TO REDUCE FIN BENDING

AMORPHOUS CARBON LAYER FOR COBALT ETCH PROTECTION IN DUAL DAMASCENE...

INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...

GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME

USING TENSILE MASK TO MINIMIZE BUCKLING IN SUBSTRATE

MULTIPLE PATTERNING METHOD FOR SUBSTRATE

FORMATION OF FINFET JUNCTION