Shan Sun

Person

Monument, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Local reference voltage generator for non-volatile memory
- Patent number 11,978,494
- Issue date May 7, 2024
- Infineon Technologies LLC
- Edwin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Local reference voltage generator for non-volatile memory
- Patent number 11,587,603
- Issue date Feb 21, 2023
- Infineon Technologies LLC
- Edwin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a damascene self-aligned ferroelectric rando...
- Patent number 10,347,829
- Issue date Jul 9, 2019
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2T1C ferro-electric random access memory cell
- Patent number 10,332,596
- Issue date Jun 25, 2019
- Cypress Semiconductor Corporation
- Joseph S Tandingan
- G11 - INFORMATION STORAGE
Information Patent Grant
Damascene oxygen barrier and hydrogen barrier for ferroelectric ran...
- Patent number 10,304,731
- Issue date May 28, 2019
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory on pre-patterned bottom electrod...
- Patent number 10,079,240
- Issue date Sep 18, 2018
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2T1C ferro-electric random access memory cell
- Patent number 10,074,422
- Issue date Sep 11, 2018
- Cypress Semiconductor Corporation
- Joseph S Tandingan
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric random-access memory with pre-patterned oxygen barrier
- Patent number 9,646,976
- Issue date May 9, 2017
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen barriers in a copper interconnect process
- Patent number 9,624,094
- Issue date Apr 18, 2017
- Cypress Semiconductor Corporation
- Shan Sun
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Enhanced hydrogen barrier encapsulation method for the control of h...
- Patent number 9,595,576
- Issue date Mar 14, 2017
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating an F-RAM
- Patent number 9,548,348
- Issue date Jan 17, 2017
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid reference generation for ferroelectric random access memory
- Patent number 9,514,797
- Issue date Dec 6, 2016
- Cypress Semiconductor Corporation
- Fan Chu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating ferroelectric random-access memory on pre-pa...
- Patent number 9,515,075
- Issue date Dec 6, 2016
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a damascene self-aligned ferroelectric rando...
- Patent number 9,318,693
- Issue date Apr 19, 2016
- Cypress Semiconductor Corporation
- John Cronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating an F-RAM
- Patent number 9,305,995
- Issue date Apr 5, 2016
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method minimizing imprint through packaging of F-RAM
- Patent number 9,240,440
- Issue date Jan 19, 2016
- Cypress Semiconductor Corporation
- Shan Sun
- G01 - MEASURING TESTING
Information Patent Grant
Method of fabricating a ferroelectric capacitor
- Patent number 9,111,944
- Issue date Aug 18, 2015
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Eliminating shorting between ferroelectric capacitors and metal con...
- Patent number 9,006,808
- Issue date Apr 14, 2015
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced hydrogen barrier encapsulation method for the control of h...
- Patent number 8,916,434
- Issue date Dec 23, 2014
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving data retention in a 2T/2C ferroelectric memory
- Patent number 8,842,460
- Issue date Sep 23, 2014
- Cypress Semiconductor Corporation
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a damascene self-aligned ferroelectric rando...
- Patent number 8,728,901
- Issue date May 20, 2014
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a damascene self-aligned ferroelectric rando...
- Patent number 8,552,515
- Issue date Oct 8, 2013
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a damascene self-aligned ferroelectric rando...
- Patent number 8,518,792
- Issue date Aug 27, 2013
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a damascene self-aligned ferroelectric rando...
- Patent number 8,518,791
- Issue date Aug 27, 2013
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for mitigating imprint in a ferroelectric memory
- Patent number 8,081,500
- Issue date Dec 20, 2011
- Ramtron International Corporation
- Craig Taylor
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for generating a centered reference voltage for a 1T/1C fer...
- Patent number 7,313,010
- Issue date Dec 25, 2007
- Ramtron International Corporation
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for generating a centered reference voltage for a 1T/1C fer...
- Patent number 7,116,572
- Issue date Oct 3, 2006
- Ramtron International Corporation
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for improving retention reliability of ferroelectric RAM
- Patent number 6,830,938
- Issue date Dec 14, 2004
- Texas Instruments Incorporated
- John Anthony Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor memory device and a fabrication process...
- Patent number 6,777,287
- Issue date Aug 17, 2004
- Fujitsu Limited
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a strontium ruthenium oxide protective layer...
- Patent number 6,674,633
- Issue date Jan 6, 2004
- Fujitsu Limited
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOCAL REFERENCE VOLTAGE GENERATOR FOR NON-VOLATILE MEMORY
- Publication number 20230267983
- Publication date Aug 24, 2023
- Infineon Technologies LLC
- Edwin KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Local Reference Voltage Generator for Non-Volatile Memory
- Publication number 20220101904
- Publication date Mar 31, 2022
- Infineon Technologies LLC
- Edwin Kim
- G11 - INFORMATION STORAGE
Information Patent Application
2T1C Ferro-electric Random Access Memory Cell
- Publication number 20190088320
- Publication date Mar 21, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Joseph S. Tandingan
- G11 - INFORMATION STORAGE
Information Patent Application
DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...
- Publication number 20180182770
- Publication date Jun 28, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING FERROELECTRIC RANDOM-ACCESS MEMORY ON PRE-PA...
- Publication number 20170162249
- Publication date Jun 8, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC RANDOM-ACCESS MEMORY WITH PRE-PATTERNED OXYGEN BARRIER
- Publication number 20160351577
- Publication date Dec 1, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...
- Publication number 20150206893
- Publication date Jul 23, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED HYDROGEN BARRIER ENCAPSULATION METHOD FOR THE CONTROL OF H...
- Publication number 20150115408
- Publication date Apr 30, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELIMINATING SHORTING BETWEEN FERROELECTRIC CAPACITORS AND METAL CON...
- Publication number 20150069481
- Publication date Mar 12, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A FERROELECTRIC CAPACITOR
- Publication number 20150072441
- Publication date Mar 12, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING AN F-RAM
- Publication number 20150004718
- Publication date Jan 1, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING DATA RETENTION IN A 2T/2C FERROELECTRIC MEMORY
- Publication number 20140146591
- Publication date May 29, 2014
- RAMTRON INTERNATIONAL CORPORATION
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERRORELECTRIC RAND...
- Publication number 20140093983
- Publication date Apr 3, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- John Cronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERRORELECTRIC RAND...
- Publication number 20140087484
- Publication date Mar 27, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced Hydrogen Barrier Encapsulation Method for the Control of H...
- Publication number 20130300003
- Publication date Nov 14, 2013
- RAMTRON INTERNATIONAL CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDO...
- Publication number 20130037872
- Publication date Feb 14, 2013
- RAMTRON INTERNATIONAL CORPORATION
- Shan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDO...
- Publication number 20130037912
- Publication date Feb 14, 2013
- RAMTRON INTERNATIONAL CORPORATION
- Shan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDO...
- Publication number 20130037897
- Publication date Feb 14, 2013
- RAMTRON INTERNATIONAL CORPORATION
- Shan SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MITIGATING IMPRINT IN A FERROELECTRIC MEMORY
- Publication number 20100246238
- Publication date Sep 30, 2010
- RAMTRON INTERNATIONAL CORPORATION
- Craig Taylor
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT FOR GENERATING A CENTERED REFERENCE VOLTAGE FOR A 1T/1C FER...
- Publication number 20060245286
- Publication date Nov 2, 2006
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit for generating a centered reference voltage for a 1T/1C fer...
- Publication number 20060098470
- Publication date May 11, 2006
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR IMPROVING RETENTION RELIABILITY OF FERROELECTRIC RAM
- Publication number 20040266028
- Publication date Dec 30, 2004
- John Anthony Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric semiconductor memory device and a fabrication process...
- Publication number 20030205743
- Publication date Nov 6, 2003
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process and structure for masking integrated capacitors of particul...
- Publication number 20030071294
- Publication date Apr 17, 2003
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric semiconductor memory device and a fabrication process...
- Publication number 20020158278
- Publication date Oct 31, 2002
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing a strontium ruthenium oxide protective layer...
- Publication number 20020149040
- Publication date Oct 17, 2002
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process and structure for masking integrated capacitors of particul...
- Publication number 20020117701
- Publication date Aug 29, 2002
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric thin films and solutions: compositions and processing
- Publication number 20010016229
- Publication date Aug 23, 2001
- Shan Sun
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Local reference voltage generator for non-volatile memory

Local reference voltage generator for non-volatile memory

Method for fabricating a damascene self-aligned ferroelectric rando...

2T1C ferro-electric random access memory cell

Damascene oxygen barrier and hydrogen barrier for ferroelectric ran...

Ferroelectric random-access memory on pre-patterned bottom electrod...

2T1C ferro-electric random access memory cell

Ferroelectric random-access memory with pre-patterned oxygen barrier

Hydrogen barriers in a copper interconnect process

Enhanced hydrogen barrier encapsulation method for the control of h...

Methods of fabricating an F-RAM

Hybrid reference generation for ferroelectric random access memory

Method for fabricating ferroelectric random-access memory on pre-pa...

Method for fabricating a damascene self-aligned ferroelectric rando...

Methods of fabricating an F-RAM

Method minimizing imprint through packaging of F-RAM

Method of fabricating a ferroelectric capacitor

Eliminating shorting between ferroelectric capacitors and metal con...

Enhanced hydrogen barrier encapsulation method for the control of h...

Method for improving data retention in a 2T/2C ferroelectric memory

Method for fabricating a damascene self-aligned ferroelectric rando...

Method for fabricating a damascene self-aligned ferroelectric rando...

Method for fabricating a damascene self-aligned ferroelectric rando...

Method for fabricating a damascene self-aligned ferroelectric rando...

Method for mitigating imprint in a ferroelectric memory

Circuit for generating a centered reference voltage for a 1T/1C fer...

Circuit for generating a centered reference voltage for a 1T/1C fer...

Method for improving retention reliability of ferroelectric RAM

Ferroelectric semiconductor memory device and a fabrication process...

Process for producing a strontium ruthenium oxide protective layer...

Patents Applicationslast 30 patents

LOCAL REFERENCE VOLTAGE GENERATOR FOR NON-VOLATILE MEMORY

Local Reference Voltage Generator for Non-Volatile Memory

2T1C Ferro-electric Random Access Memory Cell

DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...

METHOD FOR FABRICATING FERROELECTRIC RANDOM-ACCESS MEMORY ON PRE-PA...

FERROELECTRIC RANDOM-ACCESS MEMORY WITH PRE-PATTERNED OXYGEN BARRIER

DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...

ENHANCED HYDROGEN BARRIER ENCAPSULATION METHOD FOR THE CONTROL OF H...

ELIMINATING SHORTING BETWEEN FERROELECTRIC CAPACITORS AND METAL CON...

METHOD OF FABRICATING A FERROELECTRIC CAPACITOR

METHODS OF FABRICATING AN F-RAM

METHOD FOR IMPROVING DATA RETENTION IN A 2T/2C FERROELECTRIC MEMORY

METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERRORELECTRIC RAND...

METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERRORELECTRIC RAND...

Enhanced Hydrogen Barrier Encapsulation Method for the Control of H...

METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDO...

METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDO...

METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDO...

METHOD FOR MITIGATING IMPRINT IN A FERROELECTRIC MEMORY

CIRCUIT FOR GENERATING A CENTERED REFERENCE VOLTAGE FOR A 1T/1C FER...

Circuit for generating a centered reference voltage for a 1T/1C fer...

METHOD FOR IMPROVING RETENTION RELIABILITY OF FERROELECTRIC RAM

Ferroelectric semiconductor memory device and a fabrication process...

Process and structure for masking integrated capacitors of particul...

Ferroelectric semiconductor memory device and a fabrication process...

Process for producing a strontium ruthenium oxide protective layer...

Process and structure for masking integrated capacitors of particul...

Ferroelectric thin films and solutions: compositions and processing