Shane J. Trapp

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic devices comprising adjoining oxide materials and related...
- Patent number 11,672,118
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an apparatus for making semiconductor dieves
- Patent number 10,930,548
- Issue date Feb 23, 2021
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions
- Patent number 9,984,977
- Issue date May 29, 2018
- Micron Technology, Inc.
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate mask patterns, methods of forming a structure on a substr...
- Patent number 9,741,580
- Issue date Aug 22, 2017
- Micron Technology, Inc.
- Vishal Sipani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions
- Patent number 9,679,852
- Issue date Jun 13, 2017
- Micron Technology, Inc.
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate mask patterns, methods of forming a structure on a substr...
- Patent number 8,999,852
- Issue date Apr 7, 2015
- Micron Technology, Inc.
- Vishal Sipani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a pattern on a substrate
- Patent number 8,889,558
- Issue date Nov 18, 2014
- Micron Technology, Inc.
- Ranjan Khurana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a pattern on a substrate
- Patent number 8,889,559
- Issue date Nov 18, 2014
- Micron Technology, Inc.
- Shane J. Trapp
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method to reduce charge buildup during high aspect ratio contact etch
- Patent number 8,673,787
- Issue date Mar 18, 2014
- Micron Technology, Inc.
- Gurtej S. Sandhu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Contact integration for three-dimensional stacking semiconductor de...
- Patent number 8,624,300
- Issue date Jan 7, 2014
- Intel Corporation
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce charge buildup during high aspect ratio contact etch
- Patent number 7,985,692
- Issue date Jul 26, 2011
- Micron Technology, Inc.
- Gurtej S. Sandhu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of forming openings into dielectric material
- Patent number 7,419,913
- Issue date Sep 2, 2008
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce charge buildup during high aspect ratio contact etch
- Patent number 7,344,975
- Issue date Mar 18, 2008
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuitry
- Patent number 7,291,895
- Issue date Nov 6, 2007
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a contact opening in a semiconductor device
- Patent number 7,202,171
- Issue date Apr 10, 2007
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to eliminate striations and surface roughness caused by dry...
- Patent number 7,153,779
- Issue date Dec 26, 2006
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuitry and method of forming shallo...
- Patent number 6,897,120
- Issue date May 24, 2005
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuitry, and method of forming a con...
- Patent number 6,806,197
- Issue date Oct 19, 2004
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned PECVD etch mask
- Patent number 6,630,410
- Issue date Oct 7, 2003
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to eliminate striations and surface roughness caused by dry...
- Patent number 6,569,774
- Issue date May 27, 2003
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned PECVD etch mask
- Patent number 6,451,705
- Issue date Sep 17, 2002
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...
- Publication number 20240130124
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Shyam Surthi
Information Patent Application
ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...
- Publication number 20220077176
- Publication date Mar 10, 2022
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING AN APPARATUS, AND RELATED APPARATUSES AND ELECTR...
- Publication number 20200235004
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Constructions
- Publication number 20170263563
- Publication date Sep 14, 2017
- Micron Technology, Inc.
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Constructions
- Publication number 20160005693
- Publication date Jan 7, 2016
- Micron Technology, Inc.
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR A DRY EXHUMATION WITHOUT OXIDATION OF A CELL AND SOURCE...
- Publication number 20150340611
- Publication date Nov 26, 2015
- SONY CORPORATION
- Kamran Akhtar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate Mask Patterns, Methods Of Forming A Structure On A Substr...
- Publication number 20150206760
- Publication date Jul 23, 2015
- Micron Technology, Inc.
- Vishal Sipani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming A Pattern On A Substrate
- Publication number 20140162458
- Publication date Jun 12, 2014
- Micron Technology, Inc.
- Ranjan Khurana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate Mask Patterns, Methods Of Forming A Structure On A Substr...
- Publication number 20140162457
- Publication date Jun 12, 2014
- Micron Technology, Inc.
- Vishal Sipani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming A Pattern On A Substrate
- Publication number 20140162459
- Publication date Jun 12, 2014
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT INTEGRATION FOR THREE-DIMENSIONAL STACKING SEMICONDUCTOR DE...
- Publication number 20120153357
- Publication date Jun 21, 2012
- Intel Corporation
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Reduce Charge Buildup During High Aspect Ratio Contact Etch
- Publication number 20110250759
- Publication date Oct 13, 2011
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE CHARGE BUILDUP DURING HIGH ASPECT RATIO CONTACT ETCH
- Publication number 20080128389
- Publication date Jun 5, 2008
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and composition for plasma etching of a self-aligned contact...
- Publication number 20070212885
- Publication date Sep 13, 2007
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and composition for plasma etching of a self-aligned contact...
- Publication number 20070148965
- Publication date Jun 28, 2007
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming openings into dielectric material
- Publication number 20070049037
- Publication date Mar 1, 2007
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to reduce charge buildup during high aspect ratio contact etch
- Publication number 20070049018
- Publication date Mar 1, 2007
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuitry
- Publication number 20060281311
- Publication date Dec 14, 2006
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuitry
- Publication number 20030203628
- Publication date Oct 30, 2003
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to eliminate striations and surface roughness caused by dry...
- Publication number 20030162395
- Publication date Aug 28, 2003
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming integrated circuitry, method of forming a contact...
- Publication number 20030032296
- Publication date Feb 13, 2003
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned PECVD etch mask
- Publication number 20020192976
- Publication date Dec 19, 2002
- Micron Technology, Inc.
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and composition for plasma etching of a self-aligned contact...
- Publication number 20020123226
- Publication date Sep 5, 2002
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and composition for plasma etching of a self-aligned contact...
- Publication number 20020123234
- Publication date Sep 5, 2002
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming integrated circuitry and method of forming shallo...
- Publication number 20020086543
- Publication date Jul 4, 2002
- Shane J. Trapp
- H01 - BASIC ELECTRIC ELEMENTS

Shane J. Trapp

Person

Patents Grantslast 30 patents

Electronic devices comprising adjoining oxide materials and related...

Methods of forming an apparatus for making semiconductor dieves

Semiconductor constructions

Substrate mask patterns, methods of forming a structure on a substr...

Semiconductor constructions

Substrate mask patterns, methods of forming a structure on a substr...

Methods of forming a pattern on a substrate

Methods of forming a pattern on a substrate

Method to reduce charge buildup during high aspect ratio contact etch

Contact integration for three-dimensional stacking semiconductor de...

Method to reduce charge buildup during high aspect ratio contact etch

Methods of forming openings into dielectric material

Method to reduce charge buildup during high aspect ratio contact etch

Integrated circuitry

Method for forming a contact opening in a semiconductor device

Method to eliminate striations and surface roughness caused by dry...

Method of forming integrated circuitry and method of forming shallo...

Method of forming integrated circuitry, and method of forming a con...

Self-aligned PECVD etch mask

Method to eliminate striations and surface roughness caused by dry...

Self-aligned PECVD etch mask

Patents Applicationslast 30 patents

ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...

ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...

METHODS OF FORMING AN APPARATUS, AND RELATED APPARATUSES AND ELECTR...

Semiconductor Constructions

Semiconductor Constructions

METHOD FOR A DRY EXHUMATION WITHOUT OXIDATION OF A CELL AND SOURCE...

Substrate Mask Patterns, Methods Of Forming A Structure On A Substr...

Methods of Forming A Pattern On A Substrate

Substrate Mask Patterns, Methods Of Forming A Structure On A Substr...

Methods of Forming A Pattern On A Substrate

CONTACT INTEGRATION FOR THREE-DIMENSIONAL STACKING SEMICONDUCTOR DE...

Method to Reduce Charge Buildup During High Aspect Ratio Contact Etch

METHOD TO REDUCE CHARGE BUILDUP DURING HIGH ASPECT RATIO CONTACT ETCH

Method and composition for plasma etching of a self-aligned contact...

Method and composition for plasma etching of a self-aligned contact...

Methods of forming openings into dielectric material

Method to reduce charge buildup during high aspect ratio contact etch

Integrated circuitry

Integrated circuitry

Method to eliminate striations and surface roughness caused by dry...

Method of forming integrated circuitry, method of forming a contact...

Self-aligned PECVD etch mask

Method and composition for plasma etching of a self-aligned contact...

Method and composition for plasma etching of a self-aligned contact...

Method of forming integrated circuitry and method of forming shallo...