Shanjen Pan

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
N-channel erasable programmable non-volatile memory
- Patent number 8,765,550
- Issue date Jul 1, 2014
- Texas Instruments Incorporated
- Shanjen Pan
- G11 - INFORMATION STORAGE
Information Patent Grant
On current in one-time-programmable memory cells
- Patent number 8,679,929
- Issue date Mar 25, 2014
- Texas Instruments Incorporated
- Shanjen “Robert” Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current in one-time-programmable memory cells
- Patent number 8,664,706
- Issue date Mar 4, 2014
- Texas Instruments Incorporated
- Shanjen “Robert” Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable programmable non-volatile memory
- Patent number 8,546,222
- Issue date Oct 1, 2013
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniformly doped high voltage drain-extended transistor and meth...
- Patent number 7,618,870
- Issue date Nov 17, 2009
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniformly doped high voltage drain-extended transistor and meth...
- Patent number 7,498,652
- Issue date Mar 3, 2009
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended PMOS transistor with increased breakdown voltage
- Patent number 7,262,471
- Issue date Aug 28, 2007
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended MOS devices with self-aligned floating region and fa...
- Patent number 7,235,451
- Issue date Jun 26, 2007
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating high voltage devices
- Patent number 7,208,364
- Issue date Apr 24, 2007
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of channel hot carrier effects in transistor devices
- Patent number 7,135,373
- Issue date Nov 14, 2006
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of channel hot carrier effects in transistor devices
- Patent number 7,122,862
- Issue date Oct 17, 2006
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for a low voltage CMOS integrated circuit inco...
- Patent number 7,112,480
- Issue date Sep 26, 2006
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a MOS transistor having reduced 1/f noise
- Patent number 7,018,880
- Issue date Mar 28, 2006
- Texas Instruments Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion drain-extended MOS transistors and methods for making the...
- Patent number 7,005,354
- Issue date Feb 28, 2006
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for a low voltage CMOS integrated circuit inco...
- Patent number 6,969,901
- Issue date Nov 29, 2005
- Texas Instruments Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating low CHC degradation mosfet transistors
- Patent number 6,803,282
- Issue date Oct 12, 2004
- Texas Instruments Incorporated
- Jozef D. Mitros
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRICALLY ERASABLE PROGRAMMABLE NON-VOLATILE MEMORY
- Publication number 20130256773
- Publication date Oct 3, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT IN ONE-TIME-PROGRAMMABLE MEMORY CELLS
- Publication number 20130143376
- Publication date Jun 6, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen "Robert" Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
On Current in One-Time-Programmable Memory Cells
- Publication number 20130143375
- Publication date Jun 6, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen "Robert" Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-Channel Erasable Programmable Non-Volatile Memory
- Publication number 20130016570
- Publication date Jan 17, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen Pan
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically Erasable Programmable Non-Volatile Memory
- Publication number 20120292682
- Publication date Nov 22, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WELL IMPLANTED THROUGH PARTIALLY BLOCKING MATERIAL PA...
- Publication number 20100035421
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Uniformly Doped High Voltage Drain-Extended Transistor and Meth...
- Publication number 20090124068
- Publication date May 14, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Density Capacitor Using Topographic Surface
- Publication number 20080283966
- Publication date Nov 20, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating high voltage devices
- Publication number 20060286741
- Publication date Dec 21, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain extended PMOS transistor with increased breakdown voltage
- Publication number 20060170056
- Publication date Aug 3, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for a low voltage CMOS integrated circuit inco...
- Publication number 20060022278
- Publication date Feb 2, 2006
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-uniformly doped high voltage drain-extended transistor and meth...
- Publication number 20050253217
- Publication date Nov 17, 2005
- Texas Instruments, Incorporated
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of channel hot carrier effects in transistor devices
- Publication number 20050215018
- Publication date Sep 29, 2005
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a metal oxide transistor having reduced 1/...
- Publication number 20050136579
- Publication date Jun 23, 2005
- Texas Instruments, Incorporated
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of channel hot carrier effects in transistor devices
- Publication number 20050064671
- Publication date Mar 24, 2005
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletion drain-extended MOS transistors and methods for making the...
- Publication number 20050064670
- Publication date Mar 24, 2005
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain extended MOS devices with self-aligned floating region and fa...
- Publication number 20040173859
- Publication date Sep 9, 2004
- Pinghai Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for fabricating low CHC degradation MOSFET transistors
- Publication number 20030109089
- Publication date Jun 12, 2003
- Jozef D. Mitros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density capacitor using topographic surface
- Publication number 20020084479
- Publication date Jul 4, 2002
- Shanjen Pan
- H01 - BASIC ELECTRIC ELEMENTS

Shanjen Pan

Person

Patents Grantslast 30 patents

N-channel erasable programmable non-volatile memory

On current in one-time-programmable memory cells

Current in one-time-programmable memory cells

Electrically erasable programmable non-volatile memory

Non-uniformly doped high voltage drain-extended transistor and meth...

Non-uniformly doped high voltage drain-extended transistor and meth...

Drain extended PMOS transistor with increased breakdown voltage

Drain extended MOS devices with self-aligned floating region and fa...

Methods of fabricating high voltage devices

Reduction of channel hot carrier effects in transistor devices

Reduction of channel hot carrier effects in transistor devices

Method and structure for a low voltage CMOS integrated circuit inco...

Method for manufacturing a MOS transistor having reduced 1/f noise

Depletion drain-extended MOS transistors and methods for making the...

Method and structure for a low voltage CMOS integrated circuit inco...

Methods for fabricating low CHC degradation mosfet transistors

Patents Applicationslast 30 patents

ELECTRICALLY ERASABLE PROGRAMMABLE NON-VOLATILE MEMORY

CURRENT IN ONE-TIME-PROGRAMMABLE MEMORY CELLS

On Current in One-Time-Programmable Memory Cells

N-Channel Erasable Programmable Non-Volatile Memory

Electrically Erasable Programmable Non-Volatile Memory

SEMICONDUCTOR WELL IMPLANTED THROUGH PARTIALLY BLOCKING MATERIAL PA...

Non-Uniformly Doped High Voltage Drain-Extended Transistor and Meth...

High Density Capacitor Using Topographic Surface

Methods of fabricating high voltage devices

Drain extended PMOS transistor with increased breakdown voltage

Method and structure for a low voltage CMOS integrated circuit inco...

Non-uniformly doped high voltage drain-extended transistor and meth...

Reduction of channel hot carrier effects in transistor devices

Method for manufacturing a metal oxide transistor having reduced 1/...

Reduction of channel hot carrier effects in transistor devices

Depletion drain-extended MOS transistors and methods for making the...

Drain extended MOS devices with self-aligned floating region and fa...

Methods for fabricating low CHC degradation MOSFET transistors

High density capacitor using topographic surface