Shaoping Tang

Person

Allen, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor performance modification with stressor structures
- Patent number 9,773,793
- Issue date Sep 26, 2017
- Texas Instuments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel demos device
- Patent number 9,608,109
- Issue date Mar 28, 2017
- Texas Instruments Incorporated
- Chin-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost demos transistor with improved CHC immunity
- Patent number 9,577,094
- Issue date Feb 21, 2017
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost demos transistor with improved CHC immunity
- Patent number 9,202,912
- Issue date Dec 1, 2015
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened integrated circuit
- Patent number 8,530,298
- Issue date Sep 10, 2013
- Texas Instruments Incorporated
- Richard G. Roybal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intentional pocket shadowing to compensate for the effects of cross...
- Patent number 7,795,085
- Issue date Sep 14, 2010
- Texas Instruments Incorporated
- Jong Shik Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High threshold NMOS source-drain formation with As, P and C to redu...
- Patent number 7,736,983
- Issue date Jun 15, 2010
- Texas Instruments Incorporated
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-stage implant to improve device characteristics
- Patent number 7,691,700
- Issue date Apr 6, 2010
- Texas Instruments Incorporated
- Manoj Mehrotra
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of preparing a semiconductor substrate utilizing plural impl...
- Patent number 7,662,690
- Issue date Feb 16, 2010
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of pre-S/D anneal selective nitride/oxide composite cap...
- Patent number 7,601,575
- Issue date Oct 13, 2009
- Texas Instruments Incorporated
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design method and system for optimum performance in integrated circ...
- Patent number 7,216,310
- Issue date May 8, 2007
- Texas Instruments Incorporated
- Amitava Chatterjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method to engineer the inverse narrow width effect (INWE) in CMOS t...
- Patent number 7,045,436
- Issue date May 16, 2006
- Texas Instruments Incorporated
- Amitava Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improving well to well isolation
- Patent number 6,933,203
- Issue date Aug 23, 2005
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of pre-S/D anneal selective nitride/oxide composite cap...
- Patent number 6,930,007
- Issue date Aug 16, 2005
- Texas Instruments Incorporated
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to reduce gate edge drain leakage in semiconductor devices
- Patent number 6,855,984
- Issue date Feb 15, 2005
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance PNP bipolar device fully compatible with CMOS process
- Patent number 6,794,730
- Issue date Sep 21, 2004
- Texas Instruments Incorporated
- Youngmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-dielectric constant capacitor and memory
- Patent number 6,462,931
- Issue date Oct 8, 2002
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce ultrathin porous silicon-oxide layer
- Patent number 5,830,532
- Issue date Nov 3, 1998
- Texas Instruments Corporated
- Shaoping Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY
- Publication number 20160035890
- Publication date Feb 4, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Shaoping TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY
- Publication number 20150187938
- Publication date Jul 2, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Shaoping TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION HARDENED INTEGRATED CIRCUIT
- Publication number 20130105904
- Publication date May 2, 2013
- TEXAS INSTRUMENTS INCORPORATED
- RICHARD G. ROYBAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Performance Modification with Stressor Structures
- Publication number 20110084323
- Publication date Apr 14, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THRESHOLD NMOS SOURCE-DRAIN FORMATION WITH As, P AND C TO REDU...
- Publication number 20090179280
- Publication date Jul 16, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STAGE IMPLANT TO IMPROVE DEVICE CHARACTERISTICS
- Publication number 20090004803
- Publication date Jan 1, 2009
- Manoj Mehrotra
- G11 - INFORMATION STORAGE
Information Patent Application
Nwell to nwell isolation
- Publication number 20070176263
- Publication date Aug 2, 2007
- Texas Instruments Incorporation
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to engineer the inverse narrow width effect (INWE) in CMOS t...
- Publication number 20060024910
- Publication date Feb 2, 2006
- Amitava Chatterjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of pre-S/D anneal selective nitride/oxide composite cap...
- Publication number 20050164431
- Publication date Jul 28, 2005
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Design method and system for optimum performance in integrated circ...
- Publication number 20050149887
- Publication date Jul 7, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Amitava Chatterjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method for introducing hydrogen into a channel region of a metal ox...
- Publication number 20050118770
- Publication date Jun 2, 2005
- Texas Instruments, Inc.
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of pre-S/D anneal selective nitride/oxide composite cap...
- Publication number 20050059228
- Publication date Mar 17, 2005
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for improving well to well isolation
- Publication number 20040097051
- Publication date May 20, 2004
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance PNP bipolar device fully compatible with CMOS process
- Publication number 20020084495
- Publication date Jul 4, 2002
- Youngmin Kim
- H01 - BASIC ELECTRIC ELEMENTS

Shaoping Tang

Person

Patents Grantslast 30 patents

Transistor performance modification with stressor structures

N-channel demos device

Low cost demos transistor with improved CHC immunity

Low cost demos transistor with improved CHC immunity

Radiation hardened integrated circuit

Intentional pocket shadowing to compensate for the effects of cross...

High threshold NMOS source-drain formation with As, P and C to redu...

Multi-stage implant to improve device characteristics

Method of preparing a semiconductor substrate utilizing plural impl...

Integration of pre-S/D anneal selective nitride/oxide composite cap...

Design method and system for optimum performance in integrated circ...

Method to engineer the inverse narrow width effect (INWE) in CMOS t...

Methods for improving well to well isolation

Integration of pre-S/D anneal selective nitride/oxide composite cap...

Process to reduce gate edge drain leakage in semiconductor devices

High performance PNP bipolar device fully compatible with CMOS process

High-dielectric constant capacitor and memory

Method to produce ultrathin porous silicon-oxide layer

Patents Applicationslast 30 patents

LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY

LOW COST DEMOS TRANSISTOR WITH IMPROVED CHC IMMUNITY

RADIATION HARDENED INTEGRATED CIRCUIT

Transistor Performance Modification with Stressor Structures

HIGH THRESHOLD NMOS SOURCE-DRAIN FORMATION WITH As, P AND C TO REDU...

MULTI-STAGE IMPLANT TO IMPROVE DEVICE CHARACTERISTICS

Nwell to nwell isolation

Method to engineer the inverse narrow width effect (INWE) in CMOS t...

Integration of pre-S/D anneal selective nitride/oxide composite cap...

Design method and system for optimum performance in integrated circ...

Method for introducing hydrogen into a channel region of a metal ox...

Integration of pre-S/D anneal selective nitride/oxide composite cap...

Methods for improving well to well isolation

High performance PNP bipolar device fully compatible with CMOS process