SHARIQ ARSHAD

Person

MURPHY, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High reliability polysilicon components
- Patent number 11,916,067
- Issue date Feb 27, 2024
- Texas Instruments Incorporated
- Robert M. Higgins
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
IC with deep trench polysilicon oxidation
- Patent number 11,756,794
- Issue date Sep 12, 2023
- Texas Instruments Incorporated
- Shariq Arshad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing voids and seams in trench structures by forming...
- Patent number 11,742,208
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Damien Thomas Gilmore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High reliability polysilicon components
- Patent number 11,296,075
- Issue date Apr 5, 2022
- Texas Instruments Incorporated
- Robert M. Higgins
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High dose antimony implant through screen layer for n-type buried l...
- Patent number 10,243,048
- Issue date Mar 26, 2019
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened integrated circuit
- Patent number 8,530,298
- Issue date Sep 10, 2013
- Texas Instruments Incorporated
- Richard G. Roybal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING...
- Publication number 20230420258
- Publication date Dec 28, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Damien Thomas Gilmore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RELIABILITY POLYSILICON COMPONENTS
- Publication number 20220189949
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Robert M. Higgins
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING...
- Publication number 20210305050
- Publication date Sep 30, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Damien Thomas Gilmore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC WITH DEEP TRENCH POLYSILICON OXIDATION
- Publication number 20210134602
- Publication date May 6, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Shariq Arshad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING COMPOSITE DIELECTRIC LAYER
- Publication number 20200411633
- Publication date Dec 31, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Guruvayurappan S. MATHUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RELIABILITY POLYSILICON COMPONENTS
- Publication number 20200075583
- Publication date Mar 5, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Robert M. Higgins
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...
- Publication number 20190189751
- Publication date Jun 20, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...
- Publication number 20180315818
- Publication date Nov 1, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION HARDENED INTEGRATED CIRCUIT
- Publication number 20130105904
- Publication date May 2, 2013
- TEXAS INSTRUMENTS INCORPORATED
- RICHARD G. ROYBAL
- H01 - BASIC ELECTRIC ELEMENTS

SHARIQ ARSHAD

Person

Patents Grantslast 30 patents

High reliability polysilicon components

IC with deep trench polysilicon oxidation

Method of reducing voids and seams in trench structures by forming...

High reliability polysilicon components

High dose antimony implant through screen layer for n-type buried l...

Radiation hardened integrated circuit

Patents Applicationslast 30 patents

METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING...

HIGH RELIABILITY POLYSILICON COMPONENTS

METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING...

IC WITH DEEP TRENCH POLYSILICON OXIDATION

INTEGRATED CIRCUITS INCLUDING COMPOSITE DIELECTRIC LAYER

HIGH RELIABILITY POLYSILICON COMPONENTS

HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...

HIGH DOSE ANTIMONY IMPLANT THROUGH SCREEN LAYER FOR N-TYPE BURIED L...

RADIATION HARDENED INTEGRATED CIRCUIT