Shaw-Hung Ku

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device and operation method thereof
- Patent number 11,361,824
- Issue date Jun 14, 2022
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of fabricating the same
- Patent number 11,201,169
- Issue date Dec 14, 2021
- Macronix International Co., Ltd.
- Chih-Hsiung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and programming method thereof
- Patent number 11,062,759
- Issue date Jul 13, 2021
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-tier 3D memory and erase method thereof
- Patent number 11,037,632
- Issue date Jun 15, 2021
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system to determine quick pass write operation in increm...
- Patent number 10,796,753
- Issue date Oct 6, 2020
- Macronix International Co., Ltd.
- Yu-Hung Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory having plural lower select gates
- Patent number 10,644,018
- Issue date May 5, 2020
- Macronix International Co., Ltd.
- Chih-Wei Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming non-volatile memory and memory system
- Patent number 10,460,797
- Issue date Oct 29, 2019
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase-verify method for three-dimensional memories and memory system
- Patent number 10,340,017
- Issue date Jul 2, 2019
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device having multiple string select lines
- Patent number 9,859,007
- Issue date Jan 2, 2018
- Macronix International Co., Ltd.
- Atsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with a P-N junction for reduced charge leakage...
- Patent number 9,620,603
- Issue date Apr 11, 2017
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of operation for improved gate capacity for 3D...
- Patent number 9,589,982
- Issue date Mar 7, 2017
- Macronix International Co., Ltd.
- Cheng-Hsien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having only the top poly cut
- Patent number 9,548,121
- Issue date Jan 17, 2017
- Macronix International Co., Ltd.
- Chih-Wei Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Device and method for improved threshold voltage distribution for n...
- Patent number 9,524,784
- Issue date Dec 20, 2016
- Macronix International Co., Ltd.
- Cheng-Hsien Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory
- Patent number 9,437,612
- Issue date Sep 6, 2016
- Macronix International Co., Ltd.
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of non-volatile memory
- Patent number 8,859,364
- Issue date Oct 14, 2014
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory and manufacturing method thereof
- Patent number 8,664,710
- Issue date Mar 4, 2014
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure including stress material between sta...
- Patent number 8,466,508
- Issue date Jun 18, 2013
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design tool for charge trapping memory using simulated programming...
- Patent number 7,971,177
- Issue date Jun 28, 2011
- Macronix International Co., Ltd.
- Shaw Hung Ku
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Flash memory having insulating liners between source/drain lines an...
- Patent number 7,889,556
- Issue date Feb 15, 2011
- Macronix International Co., Ltd.
- Shaw Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory having insulating liners between source/drain lines an...
- Patent number 7,668,010
- Issue date Feb 23, 2010
- Macronix International Co., Ltd.
- Shaw Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hole annealing methods of non-volatile memory cells
- Patent number 7,301,818
- Issue date Nov 27, 2007
- Macronix International Co., Ltd.
- Wenpin Lu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210305273
- Publication date Sep 30, 2021
- Macronix International Co., Ltd.
- CHIH-HSIUNG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210104439
- Publication date Apr 8, 2021
- Macronix International Co., Ltd.
- Shaw-Hung KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY HAVING PLURAL LOWER SELECT GATES
- Publication number 20190319033
- Publication date Oct 17, 2019
- Macronix International Co., Ltd.
- Chih-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROGRAMMING NON-VOLATILE MEMORY AND MEMORY SYSTEM
- Publication number 20190304556
- Publication date Oct 3, 2019
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE-VERIFY METHOD FOR THREE-DIMENSIONAL MEMORIES AND MEMORY SYSTEM
- Publication number 20190139615
- Publication date May 9, 2019
- Macronix International Co., Ltd.
- Shaw-Hung KU
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING NON-VOLATILE MEMORY AND MEMORY SYSTEM
- Publication number 20190080750
- Publication date Mar 14, 2019
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR IMPROVING YIELD FOR NON-VOLATILE MEMORY
- Publication number 20170098478
- Publication date Apr 6, 2017
- MACRONIX INTERNATIONAL CO., LTD.
- Chih-Wei Lee
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD OF OPERATION FOR IMPROVED GATE CAPACITY FOR 3D...
- Publication number 20170077118
- Publication date Mar 16, 2017
- MACRONIX INTERNATIONAL CO., LTD.
- CHENG-HSIEN CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE FOR REDUCING BIT LINE RECOVERY TIME
- Publication number 20170025179
- Publication date Jan 26, 2017
- Macronix International Co., Ltd.
- Atsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING ONLY THE TOP POLY CUT
- Publication number 20160372198
- Publication date Dec 22, 2016
- MACRONIX INTERNATIONAL CO., LTD.
- Chih-Wei LEE
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE HAVING MULTIPLE STRING SELECT LINES
- Publication number 20160372202
- Publication date Dec 22, 2016
- Atsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE AND METHOD FOR DETERMINING ELECTRICAL CHARACTERISTICS FOR EL...
- Publication number 20160336339
- Publication date Nov 17, 2016
- Macronix International Co., Ltd.
- Cheng-Hsien Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH A P-N JUNCTION FOR REDUCED CHARGE LEAKAGE...
- Publication number 20160315161
- Publication date Oct 27, 2016
- MACRONIX INTERNATIONAL CO., LTD.
- Shaw-Hung KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF NON-VOLATILE MEMORY
- Publication number 20140127894
- Publication date May 8, 2014
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20130328119
- Publication date Dec 12, 2013
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HOT CARRIER PROGRAMMING OF NAND FLASH MEMORY
- Publication number 20120236649
- Publication date Sep 20, 2012
- Macronix International Co., Ltd.
- Shaw-Hung Ku
Information Patent Application
FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...
- Publication number 20100120210
- Publication date May 13, 2010
- Macronix International Co., Ltd.
- SHAW-HUNG KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOOL FOR CHARGE TRAPPING MEMORY USING SIMULATED PROGRAMMING OPERATIONS
- Publication number 20090276737
- Publication date Nov 5, 2009
- Macronix International Co., Ltd.
- Shaw Hung Ku
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...
- Publication number 20090213656
- Publication date Aug 27, 2009
- Macronix International Co., Ltd.
- Shaw Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE AND ARRAY THEREOF
- Publication number 20090091983
- Publication date Apr 9, 2009
- Macronix International Co., Ltd.
- Shaw-Hung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hole annealing methods of non-volatile memory cells
- Publication number 20070058440
- Publication date Mar 15, 2007
- Macronix International Co., Ltd.
- Wenpin Lu
- G11 - INFORMATION STORAGE
Information Patent Application
Method and apparatus for electroluminescence
- Publication number 20060108591
- Publication date May 25, 2006
- Macronix International Co., Ltd.
- Chih Chieh Yeh
- H01 - BASIC ELECTRIC ELEMENTS

Shaw-Hung Ku

Person

Patents Grantslast 30 patents

Memory device and operation method thereof

Memory device and method of fabricating the same

Memory device and programming method thereof

Multi-tier 3D memory and erase method thereof

Method and system to determine quick pass write operation in increm...

3D memory having plural lower select gates

Method for programming non-volatile memory and memory system

Erase-verify method for three-dimensional memories and memory system

Non-volatile memory device having multiple string select lines

Semiconductor device with a P-N junction for reduced charge leakage...

Structure and method of operation for improved gate capacity for 3D...

Memory device having only the top poly cut

Device and method for improved threshold voltage distribution for n...

Three-dimensional memory

Manufacturing method of non-volatile memory

Non-volatile memory and manufacturing method thereof

Non-volatile memory structure including stress material between sta...

Design tool for charge trapping memory using simulated programming...

Flash memory having insulating liners between source/drain lines an...

Flash memory having insulating liners between source/drain lines an...

Hole annealing methods of non-volatile memory cells

Patents Applicationslast 30 patents

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

3D MEMORY HAVING PLURAL LOWER SELECT GATES

METHOD FOR PROGRAMMING NON-VOLATILE MEMORY AND MEMORY SYSTEM

ERASE-VERIFY METHOD FOR THREE-DIMENSIONAL MEMORIES AND MEMORY SYSTEM

METHOD FOR PROGRAMMING NON-VOLATILE MEMORY AND MEMORY SYSTEM

METHOD AND APPARATUS FOR IMPROVING YIELD FOR NON-VOLATILE MEMORY

STRUCTURE AND METHOD OF OPERATION FOR IMPROVED GATE CAPACITY FOR 3D...

NON-VOLATILE MEMORY DEVICE FOR REDUCING BIT LINE RECOVERY TIME

MEMORY DEVICE HAVING ONLY THE TOP POLY CUT

NON-VOLATILE MEMORY DEVICE HAVING MULTIPLE STRING SELECT LINES

DEVICE AND METHOD FOR DETERMINING ELECTRICAL CHARACTERISTICS FOR EL...

SEMICONDUCTOR DEVICE WITH A P-N JUNCTION FOR REDUCED CHARGE LEAKAGE...

MANUFACTURING METHOD OF NON-VOLATILE MEMORY

NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF

HOT CARRIER PROGRAMMING OF NAND FLASH MEMORY

FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...

TOOL FOR CHARGE TRAPPING MEMORY USING SIMULATED PROGRAMMING OPERATIONS

FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AN...

NON-VOLATILE MEMORY STRUCTURE AND ARRAY THEREOF

Hole annealing methods of non-volatile memory cells

Method and apparatus for electroluminescence