Shawn D Burnham

Person

Oxnard, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stepped field plate wide bandgap field-effect transistor and method
- Patent number 9,929,243
- Issue date Mar 27, 2018
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing the interface resistance in GaN H...
- Patent number 9,252,247
- Issue date Feb 2, 2016
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode normally-off gallium nitride heterostructure field...
- Patent number 9,190,534
- Issue date Nov 17, 2015
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped field plate wide bandgap field-effect transistor and method
- Patent number 9,142,626
- Issue date Sep 22, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned sidewall gate GaN HEMT
- Patent number 8,766,321
- Issue date Jul 1, 2014
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement and depletion mode GaN HMETs on the same substrate
- Patent number 8,748,244
- Issue date Jun 10, 2014
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode normally-off gallium nitride heterostructure field...
- Patent number 8,728,884
- Issue date May 20, 2014
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing the interface resistance in GaN h...
- Patent number 8,686,473
- Issue date Apr 1, 2014
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlGaN/GaN hybrid MOS-HFET
- Patent number 8,653,559
- Issue date Feb 18, 2014
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High current high voltage GaN field effect transistors and method o...
- Patent number 8,530,978
- Issue date Sep 10, 2013
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned sidewall gate GaN HEMT
- Patent number 8,383,471
- Issue date Feb 26, 2013
- HRL Laboratories, LLC
- Keisuke Shinihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two stage plasma etching method for enhancement mode GaN HFET
- Patent number 8,124,505
- Issue date Feb 28, 2012
- HRL Laboratories, LLC
- Shawn D Burnham
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND ME...
- Publication number 20130328061
- Publication date Dec 12, 2013
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALGaN/GaN HYBRID MOS-HFET
- Publication number 20130001646
- Publication date Jan 3, 2013
- HRL LABORATORIES, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS

Shawn D Burnham

Person

Patents Grantslast 30 patents

Stepped field plate wide bandgap field-effect transistor and method

Apparatus and method for reducing the interface resistance in GaN H...

Enhancement mode normally-off gallium nitride heterostructure field...

Stepped field plate wide bandgap field-effect transistor and method

Self-aligned sidewall gate GaN HEMT

Enhancement and depletion mode GaN HMETs on the same substrate

Enhancement mode normally-off gallium nitride heterostructure field...

Apparatus and method for reducing the interface resistance in GaN h...

AlGaN/GaN hybrid MOS-HFET

High current high voltage GaN field effect transistors and method o...

Self aligned sidewall gate GaN HEMT

Two stage plasma etching method for enhancement mode GaN HFET

Patents Applicationslast 30 patents

NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND ME...

ALGaN/GaN HYBRID MOS-HFET