Sheng-Chin Kung

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Horizontal gate-all-around device nanowire air gap spacer formation
- Patent number 11,848,369
- Issue date Dec 19, 2023
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate interface engineering with doped layer
- Patent number 11,456,178
- Issue date Sep 27, 2022
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 11,282,936
- Issue date Mar 22, 2022
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap oxidation for FinFET formation
- Patent number 11,271,097
- Issue date Mar 8, 2022
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming conformal epitaxial semiconductor cladding materi...
- Patent number 11,011,635
- Issue date May 18, 2021
- Applied Materials, Inc.
- Sheng-Chin Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor processing
- Patent number 10,861,722
- Issue date Dec 8, 2020
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 10,777,650
- Issue date Sep 15, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnet configurations for radial uniformity tuning of ICP plasmas
- Patent number 10,249,479
- Issue date Apr 2, 2019
- Applied Materials, Inc.
- Joseph F. Aubuchon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doped germanium formation
- Patent number 9,966,438
- Issue date May 8, 2018
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20220173220
- Publication date Jun 2, 2022
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INTERFACE ENGINEERING WITH DOPED LAYER
- Publication number 20210398814
- Publication date Dec 23, 2021
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP OXIDATION FOR FINFET FORMATION
- Publication number 20210134986
- Publication date May 6, 2021
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20200411656
- Publication date Dec 31, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SEMICONDUCTOR PROCESSING
- Publication number 20200152493
- Publication date May 14, 2020
- Applied Materials, Inc.
- Benjamin COLOMBEAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR SILICON-GERMANIUM PRE-CLEAN
- Publication number 20200144397
- Publication date May 7, 2020
- Applied Materials, Inc.
- Abhishek DUBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CONFORMAL EPITAXIAL SEMICONDUCTOR CLADDING MATERI...
- Publication number 20180166570
- Publication date Jun 14, 2018
- Applied Materials, Inc.
- Sheng-Chin KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DOPED GERMANIUM FORMATION
- Publication number 20180083104
- Publication date Mar 22, 2018
- Applied Materials, Inc.
- Yi-Chiau HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20170309719
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNET CONFIGURATIONS FOR RADIAL UNIFORMITY TUNING OF ICP PLASMAS
- Publication number 20160225590
- Publication date Aug 4, 2016
- Applied Materials, Inc.
- Joseph F. Aubuchon
- H01 - BASIC ELECTRIC ELEMENTS

Sheng-Chin Kung

Person

Patents Grantslast 30 patents

Horizontal gate-all-around device nanowire air gap spacer formation

Gate interface engineering with doped layer

Horizontal gate all around device nanowire air gap spacer formation

Cap oxidation for FinFET formation

Method of forming conformal epitaxial semiconductor cladding materi...

Integrated semiconductor processing

Horizontal gate all around device nanowire air gap spacer formation

Magnet configurations for radial uniformity tuning of ICP plasmas

Method of doped germanium formation

Patents Applicationslast 30 patents

HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

GATE INTERFACE ENGINEERING WITH DOPED LAYER

CAP OXIDATION FOR FINFET FORMATION

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

INTEGRATED SEMICONDUCTOR PROCESSING

METHODS AND APPARATUS FOR SILICON-GERMANIUM PRE-CLEAN

METHOD OF FORMING CONFORMAL EPITAXIAL SEMICONDUCTOR CLADDING MATERI...

METHOD OF DOPED GERMANIUM FORMATION

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

MAGNET CONFIGURATIONS FOR RADIAL UNIFORMITY TUNING OF ICP PLASMAS