Shengwei Yang

Person

Wuhan City, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Computation-in-memory in three-dimensional memory device
- Patent number 11,594,531
- Issue date Feb 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Shengwei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Computation-in-memory in three-dimensional memory device
- Patent number 11,461,266
- Issue date Oct 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Shengwei Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Computation-in-memory in three-dimensional memory device
- Patent number 11,430,785
- Issue date Aug 30, 2022
- Yangtze Memory Technologies Co., Ltd.
- Shengwei Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Time dependent dielectric breakdown test structure and test method...
- Patent number 11,187,740
- Issue date Nov 30, 2021
- Yangtze Memory Technologies Co., Ltd.
- Shengwei Yang
- G01 - MEASURING TESTING
Information Patent Grant
Bonded memory device and fabrication methods thereof
- Patent number 11,114,453
- Issue date Sep 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Shengwei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Computation-in-memory in three-dimensional memory device
- Patent number 11,114,434
- Issue date Sep 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Shengwei Yang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210335780
- Publication date Oct 28, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shengwei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210104516
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shengwei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED MEMORY DEVICE AND FABRICATION METHODS THEREOF
- Publication number 20210104542
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shengwei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200409592
- Publication date Dec 31, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shengwei Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200411509
- Publication date Dec 31, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shengwei Yang
- G11 - INFORMATION STORAGE
Information Patent Application
BONDED MEMORY DEVICE AND FABRICATION METHODS THEREOF
- Publication number 20200176466
- Publication date Jun 4, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shengwei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Time Dependent Dielectric Breakdown Test Structure and Test Method...
- Publication number 20200141995
- Publication date May 7, 2020
- Yangtze Memory Technologies Co., Ltd.
- Shengwei Yang
- G01 - MEASURING TESTING

Shengwei Yang

Person

Patents Grantslast 30 patents

Computation-in-memory in three-dimensional memory device

Computation-in-memory in three-dimensional memory device

Computation-in-memory in three-dimensional memory device

Time dependent dielectric breakdown test structure and test method...

Bonded memory device and fabrication methods thereof

Computation-in-memory in three-dimensional memory device

Patents Applicationslast 30 patents

COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE

COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE

BONDED MEMORY DEVICE AND FABRICATION METHODS THEREOF

COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE

COMPUTATION-IN-MEMORY IN THREE-DIMENSIONAL MEMORY DEVICE

BONDED MEMORY DEVICE AND FABRICATION METHODS THEREOF

Time Dependent Dielectric Breakdown Test Structure and Test Method...