Shenqing Fang

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory first process flow and device
- Patent number 11,342,429
- Issue date May 24, 2022
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tilted implant for poly resistors
- Patent number 11,257,675
- Issue date Feb 22, 2022
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 11,069,789
- Issue date Jul 20, 2021
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 11,069,699
- Issue date Jul 20, 2021
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge trapping split gate device and method of fabricating same
- Patent number 10,923,601
- Issue date Feb 16, 2021
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device interconnects and method of manufacture
- Patent number 10,833,013
- Issue date Nov 10, 2020
- MONTEREY RESEARCH, LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device interconnects and method of manufacture
- Patent number 10,833,009
- Issue date Nov 10, 2020
- MONTEREY RESEARCH, LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,818,761
- Issue date Oct 27, 2020
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate charge trapping memory cells having different select gat...
- Patent number 10,777,568
- Issue date Sep 15, 2020
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,756,101
- Issue date Aug 25, 2020
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer inter-gate dielectric structure and method of manufactu...
- Patent number 10,686,044
- Issue date Jun 16, 2020
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-trapping memory device
- Patent number 10,644,016
- Issue date May 5, 2020
- Cypress Semiconductor Corporation
- Kuo Tung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 10,644,126
- Issue date May 5, 2020
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for manufacturing self-aligned STI with single poly
- Patent number 10,622,370
- Issue date Apr 14, 2020
- MONTEREY RESEARCH, LLC
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate semiconductor device with L-shaped gate
- Patent number 10,593,688
- Issue date Mar 17, 2020
- Cypress Semiconductor Corporation
- Scott A. Bell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,566,341
- Issue date Feb 18, 2020
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory array with memory gate line and source line scr...
- Patent number 10,446,245
- Issue date Oct 15, 2019
- Cypress Semiconductor Corporation
- Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory first process flow and device
- Patent number 10,403,731
- Issue date Sep 3, 2019
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,361,215
- Issue date Jul 23, 2019
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional charge trapping NAND cell with discrete charge tr...
- Patent number 10,236,299
- Issue date Mar 19, 2019
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory array with memory gate line and source line scr...
- Patent number 10,192,627
- Issue date Jan 29, 2019
- Cypress Semiconductor Corporation
- Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer inter-gate dielectric structure and method of manufactu...
- Patent number 10,192,747
- Issue date Jan 29, 2019
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing of FET devices having lightly doped drain and source...
- Patent number 10,177,040
- Issue date Jan 8, 2019
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional capacitor
- Patent number 10,141,393
- Issue date Nov 27, 2018
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,038,004
- Issue date Jul 31, 2018
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate semiconductor device with L-shaped gate
- Patent number 10,020,316
- Issue date Jul 10, 2018
- Cypress Semiconductor Corporation
- Scott Bell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,014,380
- Issue date Jul 3, 2018
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory array with memory gate line and source line scr...
- Patent number 9,997,253
- Issue date Jun 12, 2018
- Cypress Semiconductor Corporation
- Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge trapping split gate device and method of fabricating same
- Patent number 9,966,477
- Issue date May 8, 2018
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge trapping split gate embedded flash memory and associated met...
- Patent number 9,922,833
- Issue date Mar 20, 2018
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20220005933
- Publication date Jan 6, 2022
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FORMATION WITH STRAIGHT SIDEWALL
- Publication number 20210210610
- Publication date Jul 8, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Angela Tai Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device Interconnects and Method of Manufacture
- Publication number 20210134715
- Publication date May 6, 2021
- MONTEREY RESEARCH, LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE CHARGE TRAPPING MEMORY CELLS HAVING DIFFERENT SELECT GAT...
- Publication number 20210104533
- Publication date Apr 8, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20210091198
- Publication date Mar 25, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20210082927
- Publication date Mar 18, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20200365709
- Publication date Nov 19, 2020
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20200168618
- Publication date May 28, 2020
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device Interconnects and Method of Manufacture
- Publication number 20200075477
- Publication date Mar 5, 2020
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20190386109
- Publication date Dec 19, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TILTED IMPLANT FOR POLY RESISTORS
- Publication number 20190385853
- Publication date Dec 19, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20190326303
- Publication date Oct 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY ARRAY WITH MEMORY GATE LINE AND SOURCE LINE SCR...
- Publication number 20190198124
- Publication date Jun 27, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER INTER-GATE DIELECTRIC STRUCTURE AND METHOD OF MANUFACTU...
- Publication number 20190198328
- Publication date Jun 27, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device Interconnects and Method of Manufacture
- Publication number 20190035723
- Publication date Jan 31, 2019
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20180366551
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20180366473
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE SEMICONDUCTOR DEVICE WITH L-SHAPED GATE
- Publication number 20180358367
- Publication date Dec 13, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Scott A. Bell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Split Gate Device and Method of Fabricating Same
- Publication number 20180323314
- Publication date Nov 8, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY ARRAY WITH MEMORY GATE LINE AND SOURCE LINE SCR...
- Publication number 20180261295
- Publication date Sep 13, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY ARRAY WITH MEMORY GATE LINE AND SOURCE LINE SCR...
- Publication number 20180166141
- Publication date Jun 14, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20180006132
- Publication date Jan 4, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER INTER-GATE DIELECTRIC STRUCTURE AND METHOD OF MANUFACTU...
- Publication number 20170263459
- Publication date Sep 14, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing of FET Devices Having Lightly Doped Drain and Source...
- Publication number 20170221768
- Publication date Aug 3, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Charge Trapping Memory Cells Having Different Select Gat...
- Publication number 20170194343
- Publication date Jul 6, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE SEMICONDUCTOR DEVICE WITH L-SHAPED GATE
- Publication number 20170162586
- Publication date Jun 8, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Scott BELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20170141201
- Publication date May 18, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device Interconnects and Method of Manufacture
- Publication number 20170092577
- Publication date Mar 30, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Formation with Straight Sidewall
- Publication number 20170018621
- Publication date Jan 19, 2017
- Angela Tai Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20170018555
- Publication date Jan 19, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- G11 - INFORMATION STORAGE

Shenqing Fang

Person

Patents Grantslast 30 patents

Memory first process flow and device

Tilted implant for poly resistors

Varied silicon richness silicon nitride formation

NAND memory cell string having a stacked select gate structure and...

Charge trapping split gate device and method of fabricating same

Memory device interconnects and method of manufacture

Memory device interconnects and method of manufacture

Memory first process flow and device

Split gate charge trapping memory cells having different select gat...

NAND memory cell string having a stacked select gate structure and...

Multi-layer inter-gate dielectric structure and method of manufactu...

Charge-trapping memory device

Varied silicon richness silicon nitride formation

System and method for manufacturing self-aligned STI with single poly

Split-gate semiconductor device with L-shaped gate

NAND memory cell string having a stacked select gate structure and...

Non-volatile memory array with memory gate line and source line scr...

Memory first process flow and device

NAND memory cell string having a stacked select gate structure and...

Three-dimensional charge trapping NAND cell with discrete charge tr...

Non-volatile memory array with memory gate line and source line scr...

Multi-layer inter-gate dielectric structure and method of manufactu...

Manufacturing of FET devices having lightly doped drain and source...

Three dimensional capacitor

NAND memory cell string having a stacked select gate structure and...

Split-gate semiconductor device with L-shaped gate

Memory first process flow and device

Non-volatile memory array with memory gate line and source line scr...

Charge trapping split gate device and method of fabricating same

Charge trapping split gate embedded flash memory and associated met...

Patents Applicationslast 30 patents

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

SPACER FORMATION WITH STRAIGHT SIDEWALL

Memory Device Interconnects and Method of Manufacture

SPLIT GATE CHARGE TRAPPING MEMORY CELLS HAVING DIFFERENT SELECT GAT...

Memory First Process Flow and Device

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

Memory Device Interconnects and Method of Manufacture

Memory First Process Flow and Device

TILTED IMPLANT FOR POLY RESISTORS

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

NON-VOLATILE MEMORY ARRAY WITH MEMORY GATE LINE AND SOURCE LINE SCR...

MULTI-LAYER INTER-GATE DIELECTRIC STRUCTURE AND METHOD OF MANUFACTU...

Memory Device Interconnects and Method of Manufacture

Memory First Process Flow and Device

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

SPLIT-GATE SEMICONDUCTOR DEVICE WITH L-SHAPED GATE

Charge Trapping Split Gate Device and Method of Fabricating Same

NON-VOLATILE MEMORY ARRAY WITH MEMORY GATE LINE AND SOURCE LINE SCR...

NON-VOLATILE MEMORY ARRAY WITH MEMORY GATE LINE AND SOURCE LINE SCR...

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

MULTI-LAYER INTER-GATE DIELECTRIC STRUCTURE AND METHOD OF MANUFACTU...

Manufacturing of FET Devices Having Lightly Doped Drain and Source...

Split Gate Charge Trapping Memory Cells Having Different Select Gat...

SPLIT-GATE SEMICONDUCTOR DEVICE WITH L-SHAPED GATE

Memory First Process Flow and Device

Memory Device Interconnects and Method of Manufacture

Spacer Formation with Straight Sidewall

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...