Shi-Chung Sun

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Hsin-Chu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Optimized TaCN thin film diffusion barrier for copper metallization
- Patent number 6,624,073
- Issue date Sep 23, 2003
- Promos Technologies, Inc.
- Shi-Chung Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric based on oxynitride grown in N.sub.2 O and annealed...
- Patent number 5,880,040
- Issue date Mar 9, 1999
- Macronix International Co., Ltd.
- Shi-Chung Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Optimized TaCN thin film diffusion barrier for copper metallization
- Publication number 20020182862
- Publication date Dec 5, 2002
- ProMOS Technologies, Inc.
- Shi-Chung Sun
- H01 - BASIC ELECTRIC ELEMENTS