Shiang Yang ONG

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Deep trench isolation structures with a substrate connection
- Patent number 12,136,649
- Issue date Nov 5, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jianbo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide-semiconductor devices with a multipl...
- Patent number 11,908,930
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Namchil Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage Schottky diode and manufacturing method thereof
- Patent number 10,529,819
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Namchil Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low on resistance high voltage metal oxide semiconductor transistor
- Patent number 10,510,831
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Namchil Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures to deep trench isolation structures and method o...
- Patent number 10,504,768
- Issue date Dec 10, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ke Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with deep trench isolations and methods for pro...
- Patent number 9,831,304
- Issue date Nov 28, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Mun Tat Yap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation scheme for high voltage device
- Patent number 9,673,084
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with the implantation o...
- Patent number 8,999,803
- Issue date Apr 7, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and method of...
- Patent number 8,975,708
- Issue date Mar 10, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with the implantation o...
- Patent number 8,916,430
- Issue date Dec 23, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and method of...
- Patent number 8,470,700
- Issue date Jun 25, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nested and isolated transistors with reduced impedance difference
- Patent number 8,143,651
- Issue date Mar 27, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Johnny Widodo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective STI stress relaxation through ion implantation
- Patent number 8,008,744
- Issue date Aug 30, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nested and isolated transistors with reduced impedance difference
- Patent number 7,767,577
- Issue date Aug 3, 2010
- Chartered Semiconductor Manufacturing, Ltd.
- Johnny Widodo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective STI stress relaxation through ion implantation
- Patent number 7,727,856
- Issue date Jun 1, 2010
- Chartered Semiconductor Manufacturing, Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End of range (EOR) secondary defect engineering using chemical vapo...
- Patent number 7,400,018
- Issue date Jul 15, 2008
- Chartered Semiconductor Manufacturing Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End of range (EOR) secondary defect engineering using substitutiona...
- Patent number 7,109,099
- Issue date Sep 19, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH ISOLATION STRUCTURES AND METHODS OF MAKING THEREOF
- Publication number 20240014066
- Publication date Jan 11, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- HUNG CHANG LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION STRUCTURES WITH A SUBSTRATE CONNECTION
- Publication number 20230335583
- Publication date Oct 19, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Jianbo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A MULTIPL...
- Publication number 20230059226
- Publication date Feb 23, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Namchil Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES TO DEEP TRENCH ISOLATION STRUCTURES AND METHOD O...
- Publication number 20200006111
- Publication date Jan 2, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ke DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ON RESISTANCE HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20190259829
- Publication date Aug 22, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Namchil MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20190140071
- Publication date May 9, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Namchil MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION SCHEME FOR HIGH VOLTAGE DEVICE
- Publication number 20160163583
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH THE IMPLANTATION O...
- Publication number 20140357028
- Publication date Dec 4, 2014
- Nicolas Sassiat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLUORINE-DOPED CHANNEL SILICON-GERMANIUM LAYER
- Publication number 20140264484
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Nicolas SASSIAT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE AND METHOD OF...
- Publication number 20130270654
- Publication date Oct 17, 2013
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with reduced contact resistance and method of...
- Publication number 20120018815
- Publication date Jan 26, 2012
- Globalfoundries Singapore PTE, LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE
- Publication number 20100301424
- Publication date Dec 2, 2010
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Johnny WIDODO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE STI STRESS RELAXATION THROUGH ION IMPLANTATION
- Publication number 20100230777
- Publication date Sep 16, 2010
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lee Wee TEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE
- Publication number 20090206408
- Publication date Aug 20, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Johnny WIDODO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM EMPLOYING FLUORINE DOPING
- Publication number 20090090975
- Publication date Apr 9, 2009
- Chartered Semiconductor Manufacturing LTD.
- Shiang Yang Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective STI Stress Relaxation Through Ion Implantation
- Publication number 20080150037
- Publication date Jun 26, 2008
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
END OF RANGE (EOR) SECONDARY DEFECT ENGINEERING USING CHEMICAL VAPO...
- Publication number 20060270168
- Publication date Nov 30, 2006
- Chartered Semiconductor Manufacturing LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
End of range (EOR) secondary defect engineering using substitutiona...
- Publication number 20050085055
- Publication date Apr 21, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS

Shiang Yang ONG

Person

Patents Grantslast 30 patents

Deep trench isolation structures with a substrate connection

Laterally-diffused metal-oxide-semiconductor devices with a multipl...

High voltage Schottky diode and manufacturing method thereof

Low on resistance high voltage metal oxide semiconductor transistor

Contact structures to deep trench isolation structures and method o...

Integrated circuits with deep trench isolations and methods for pro...

Isolation scheme for high voltage device

Methods for fabricating integrated circuits with the implantation o...

Semiconductor device with reduced contact resistance and method of...

Methods for fabricating integrated circuits with the implantation o...

Semiconductor device with reduced contact resistance and method of...

Nested and isolated transistors with reduced impedance difference

Selective STI stress relaxation through ion implantation

Nested and isolated transistors with reduced impedance difference

Selective STI stress relaxation through ion implantation

End of range (EOR) secondary defect engineering using chemical vapo...

End of range (EOR) secondary defect engineering using substitutiona...

Patents Applicationslast 30 patents

TRENCH ISOLATION STRUCTURES AND METHODS OF MAKING THEREOF

DEEP TRENCH ISOLATION STRUCTURES WITH A SUBSTRATE CONNECTION

LATERALLY-DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A MULTIPL...

CONTACT STRUCTURES TO DEEP TRENCH ISOLATION STRUCTURES AND METHOD O...

LOW ON RESISTANCE HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR

HIGH VOLTAGE SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF

ISOLATION SCHEME FOR HIGH VOLTAGE DEVICE

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH THE IMPLANTATION O...

FLUORINE-DOPED CHANNEL SILICON-GERMANIUM LAYER

SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE AND METHOD OF...

Semiconductor device with reduced contact resistance and method of...

NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE

SELECTIVE STI STRESS RELAXATION THROUGH ION IMPLANTATION

NESTED AND ISOLATED TRANSISTORS WITH REDUCED IMPEDANCE DIFFERENCE

INTEGRATED CIRCUIT SYSTEM EMPLOYING FLUORINE DOPING

Selective STI Stress Relaxation Through Ion Implantation

END OF RANGE (EOR) SECONDARY DEFECT ENGINEERING USING CHEMICAL VAPO...

End of range (EOR) secondary defect engineering using substitutiona...