Shigeaki Sumiya

Person

Hekinan City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device, HEMT device, and method of manufacturing semi...
- Patent number 9,478,650
- Issue date Oct 25, 2016
- NGK Insulators, Ltd.
- Tomohiko Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate comprising a superlattice group and method for...
- Patent number 9,090,993
- Issue date Jul 28, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate and method for manufacturing epitaxial substrate
- Patent number 8,969,880
- Issue date Mar 3, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate and method for manufacturing epitaxial substrate
- Patent number 8,946,723
- Issue date Feb 3, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride epitaxial substrate for semiconductor device, sem...
- Patent number 8,890,208
- Issue date Nov 18, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride epitaxial substrate for semiconductor device, sem...
- Patent number 8,872,226
- Issue date Oct 28, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, method for manufactur...
- Patent number 8,853,828
- Issue date Oct 7, 2014
- NGK Insulators, Ltd.
- Shigeaki Sumiya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate and method for manufacturing epitaxial substrate
- Patent number 8,648,351
- Issue date Feb 11, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, schottky junction str...
- Patent number 8,598,626
- Issue date Dec 3, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate with intermediate layers for reinforcing compre...
- Patent number 8,471,265
- Issue date Jun 25, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor element, semiconductor elemen...
- Patent number 8,415,690
- Issue date Apr 9, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 8,410,552
- Issue date Apr 2, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride single crystals
- Patent number 8,404,045
- Issue date Mar 26, 2013
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 8,378,386
- Issue date Feb 19, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate, semiconductor device substrate, and HEMT device
- Patent number 7,982,241
- Issue date Jul 19, 2011
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing dislocations in group III nitride crystal, and s...
- Patent number 7,771,849
- Issue date Aug 10, 2010
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming AlGaN crystal layer
- Patent number 7,713,847
- Issue date May 11, 2010
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving surface flatness of group-III nitride crystal,...
- Patent number 7,687,824
- Issue date Mar 30, 2010
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming AlGaN crystal layer
- Patent number 7,632,741
- Issue date Dec 15, 2009
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for epitaxial growth
- Patent number 6,869,702
- Issue date Mar 22, 2005
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride epitaxial substrate, epitaxial substrate for III nitrid...
- Patent number 6,844,611
- Issue date Jan 18, 2005
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrates and semiconductor devices
- Patent number 6,805,982
- Issue date Oct 19, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride semiconductor substrate for ELO
- Patent number 6,770,914
- Issue date Aug 3, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride film and a III nitride multilayer
- Patent number 6,765,244
- Issue date Jul 20, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for fabricating a III nitride film, substrate for epitaxial...
- Patent number 6,749,957
- Issue date Jun 15, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a III nitride film
- Patent number 6,703,255
- Issue date Mar 9, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-detecting element
- Patent number 6,597,023
- Issue date Jul 22, 2003
- NGK Insulators, Ltd.
- Tomohiko Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device and Method for Manufacturing Semiconductor Device
- Publication number 20140361337
- Publication date Dec 11, 2014
- NGK INSULATORS, LTD
- Tomohiko SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, HEMT DEVICE, AND METHOD OF MANUFACTURING SEMI...
- Publication number 20140042451
- Publication date Feb 13, 2014
- NGK Insulators, Ltd.
- Tomohiko SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130092953
- Publication date Apr 18, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130043488
- Publication date Feb 21, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130032781
- Publication date Feb 7, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130026486
- Publication date Jan 31, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130026488
- Publication date Jan 31, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130020583
- Publication date Jan 24, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...
- Publication number 20120211765
- Publication date Aug 23, 2012
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SE...
- Publication number 20120168771
- Publication date Jul 5, 2012
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20120161152
- Publication date Jun 28, 2012
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...
- Publication number 20120126293
- Publication date May 24, 2012
- NGK INSULATORS, LTD
- Shigeaki Sumiya
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STR...
- Publication number 20110062493
- Publication date Mar 17, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110049570
- Publication date Mar 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110049571
- Publication date Mar 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110024795
- Publication date Feb 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110024796
- Publication date Feb 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing group III nitride single crystals
- Publication number 20100107969
- Publication date May 6, 2010
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE SUBSTRATE, AND HEMT DEVICE
- Publication number 20100051961
- Publication date Mar 4, 2010
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND S...
- Publication number 20090136780
- Publication date May 28, 2009
- NGK Insulators, Ltd.
- Tomohiko SHIBATA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING AlGaN CRYSTAL LAYER
- Publication number 20080242060
- Publication date Oct 2, 2008
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AlGaN CRYSTAL LAYER
- Publication number 20080233721
- Publication date Sep 25, 2008
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FOR FILM GROWTH OF GROUP III NITRIDES, METHOD OF MANUFACT...
- Publication number 20070045662
- Publication date Mar 1, 2007
- DOWA MINING CO., LTD.
- Shigeaki SUMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of improving surface flatness of group-III nitride crystal,...
- Publication number 20050287774
- Publication date Dec 29, 2005
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate for epitaxial growth
- Publication number 20040131866
- Publication date Jul 8, 2004
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial substrates and semiconductor devices
- Publication number 20030213949
- Publication date Nov 20, 2003
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III nitride epitaxial substrate, epitaxial substrate for III nitrid...
- Publication number 20030170503
- Publication date Sep 11, 2003
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a III nitride film, substrate for epitaxial...
- Publication number 20030124393
- Publication date Jul 3, 2003
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III nitride film and a III nitride multilayer
- Publication number 20020190275
- Publication date Dec 19, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III nitride semiconductor substrate for ELO
- Publication number 20020192959
- Publication date Dec 19, 2002
- NGK Insulators, Ltd.
- Tomohiko Shibata
- C30 - CRYSTAL GROWTH

Shigeaki Sumiya

Person

Patents Grantslast 30 patents

Semiconductor device, HEMT device, and method of manufacturing semi...

Epitaxial substrate comprising a superlattice group and method for...

Epitaxial substrate and method for manufacturing epitaxial substrate

Epitaxial substrate and method for manufacturing epitaxial substrate

Group III nitride epitaxial substrate for semiconductor device, sem...

Group III nitride epitaxial substrate for semiconductor device, sem...

Epitaxial substrate for semiconductor device, method for manufactur...

Epitaxial substrate and method for manufacturing epitaxial substrate

Epitaxial substrate for semiconductor device, schottky junction str...

Epitaxial substrate with intermediate layers for reinforcing compre...

Epitaxial substrate for semiconductor element, semiconductor elemen...

Epitaxial substrate for semiconductor device, semiconductor device,...

Method for manufacturing group III nitride single crystals

Epitaxial substrate for semiconductor device, semiconductor device,...

Epitaxial substrate, semiconductor device substrate, and HEMT device

Method of reducing dislocations in group III nitride crystal, and s...

Method for forming AlGaN crystal layer

Method of improving surface flatness of group-III nitride crystal,...

Method for forming AlGaN crystal layer

Substrate for epitaxial growth

III nitride epitaxial substrate, epitaxial substrate for III nitrid...

Epitaxial substrates and semiconductor devices

III nitride semiconductor substrate for ELO

III nitride film and a III nitride multilayer

Method for fabricating a III nitride film, substrate for epitaxial...

Method for fabricating a III nitride film

Semiconductor light-detecting element

Patents Applicationslast 30 patents

Semiconductor Device and Method for Manufacturing Semiconductor Device

SEMICONDUCTOR DEVICE, HEMT DEVICE, AND METHOD OF MANUFACTURING SEMI...

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...

SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SE...

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STR...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

Method for manufacturing group III nitride single crystals

EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE SUBSTRATE, AND HEMT DEVICE

METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND S...

METHOD FOR FORMING AlGaN CRYSTAL LAYER

METHOD FOR FORMING AlGaN CRYSTAL LAYER

SUBSTRATE FOR FILM GROWTH OF GROUP III NITRIDES, METHOD OF MANUFACT...

Method of improving surface flatness of group-III nitride crystal,...

Substrate for epitaxial growth

Epitaxial substrates and semiconductor devices

III nitride epitaxial substrate, epitaxial substrate for III nitrid...

Method for fabricating a III nitride film, substrate for epitaxial...

III nitride film and a III nitride multilayer

III nitride semiconductor substrate for ELO