Shigehiro Nishino

Person

Kyoto-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Voltage division resistor for acceleration tubes, acceleration tube...
- Patent number 7,671,546
- Issue date Mar 2, 2010
- Kyoto Institute of Technology
- Shigehiro Nishino
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Large-diameter SiC wafer and manufacturing method thereof
- Patent number 7,544,249
- Issue date Jun 9, 2009
- Mitsui Engineering Co. Ltd.
- Shigehiro Nishino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of α-SiC wafer
- Patent number 6,995,036
- Issue date Feb 7, 2006
- Mitsui Engineering & Shipbuilding Co., Ltd.
- Shigehiro Nishino
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of making SiC single crystal and apparatus for making SiC si...
- Patent number 6,391,109
- Issue date May 21, 2002
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing silicon carbide single crystal
- Patent number 6,336,971
- Issue date Jan 8, 2002
- Showa Denko Kabushiki Kaisha
- Nobuyuki Nagato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making SiC single crystal and apparatus for making SiC si...
- Patent number 6,193,797
- Issue date Feb 27, 2001
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making GaN single crystal and apparatus for making GaN si...
- Patent number 6,136,093
- Issue date Oct 24, 2000
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Voltage Division Resistor for Acceleration Tubes, Acceleration Tube...
- Publication number 20090039804
- Publication date Feb 12, 2009
- KYOTO INSTITUTE OF TECHNOLOGY
- Shigehiro Nishino
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Ion Source
- Publication number 20080067411
- Publication date Mar 20, 2008
- KYOTO INSTITUTE OF TECHNOLOGY
- Shigehiro Nishino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Large-diameter sic wafer and manufacturing method thereof
- Publication number 20060097266
- Publication date May 11, 2006
- MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
- Shigehiro Nishino
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method of alpha-sic wafer
- Publication number 20040241343
- Publication date Dec 2, 2004
- Shigehiro Nishino
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of making SiC single crystal and apparatus for making SiC si...
- Publication number 20010000864
- Publication date May 10, 2001
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH

Shigehiro Nishino

Person

Patents Grantslast 30 patents

Voltage division resistor for acceleration tubes, acceleration tube...

Large-diameter SiC wafer and manufacturing method thereof

Production method of α-SiC wafer

Method of making SiC single crystal and apparatus for making SiC si...

Method and apparatus for producing silicon carbide single crystal

Method of making SiC single crystal and apparatus for making SiC si...

Method of making GaN single crystal and apparatus for making GaN si...

Patents Applicationslast 30 patents

Voltage Division Resistor for Acceleration Tubes, Acceleration Tube...

Ion Source

Large-diameter sic wafer and manufacturing method thereof

Production method of alpha-sic wafer

Method of making SiC single crystal and apparatus for making SiC si...