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Shigehisa Yamamoto
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Tokyo, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
Patent number
10,858,757
Issue date
Dec 8, 2020
Mitsubishi Electric Corporation
Takanori Tanaka
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for manufacturing silicon carbide semiconductor apparatus, a...
Patent number
9,874,596
Issue date
Jan 23, 2018
Mitsubishi Electric Corporation
Shoyu Watanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of verifying semiconductor integrated circuit reliability an...
Patent number
6,470,479
Issue date
Oct 22, 2002
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Burn-in test method for a semiconductor chip and burn-in test appar...
Patent number
6,404,219
Issue date
Jun 11, 2002
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G01 - MEASURING TESTING
Information
Patent Grant
Burn-in method and burn-in device
Patent number
6,372,528
Issue date
Apr 16, 2002
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G11 - INFORMATION STORAGE
Information
Patent Grant
Method of testing semiconductor devices
Patent number
6,127,837
Issue date
Oct 3, 2000
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G01 - MEASURING TESTING
Information
Patent Grant
Semiconductor device testing apparatus and testing method thereof
Patent number
6,037,794
Issue date
Mar 14, 2000
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G01 - MEASURING TESTING
Information
Patent Grant
Design aiding apparatus and method for designing a semiconductor de...
Patent number
6,024,478
Issue date
Feb 15, 2000
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Device for evaluating reliability of interconnect wires
Patent number
5,900,735
Issue date
May 4, 1999
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G01 - MEASURING TESTING
Information
Patent Grant
Crystal orientation detectable semiconductor substrate, and methods...
Patent number
5,876,819
Issue date
Mar 2, 1999
Mitsubishi Denki Kabushiki Kaisha
Yasuhiro Kimura
C30 - CRYSTAL GROWTH
Information
Patent Grant
Input protection circuit
Patent number
5,696,398
Issue date
Dec 9, 1997
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
SEMICONDUCTOR MANUFACTURING APPARATUS
Publication number
20240387201
Publication date
Nov 21, 2024
Mitsubishi Electric Corporation
Hirofumi OKI
B24 - GRINDING POLISHING
Information
Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
Publication number
20190145021
Publication date
May 16, 2019
MITSUBISHI ELECTRIC CORPORATION
Takanori TANAKA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR APPARATUS, A...
Publication number
20160003889
Publication date
Jan 7, 2016
Mitsubishi Electric corporation
Shoyu WATANABE
G01 - MEASURING TESTING
Information
Patent Application
BURN-IN TEST METHOD FOR A SEMICONDUCTOR CHIP AND BURN-IN TEST APPAR...
Publication number
20020050813
Publication date
May 2, 2002
SHIGEHISA YAMAMOTO
G01 - MEASURING TESTING
Information
Patent Application
BURN-IN METHOD AND BURN-IN DEVICE
Publication number
20020039800
Publication date
Apr 4, 2002
Mitsubishi Denki Kabushiki Kaisha
Shigehisa Yamamoto
G01 - MEASURING TESTING
Information
Patent Application
Burn-in system and burn-in method
Publication number
20020009120
Publication date
Jan 24, 2002
Mitsubishi Denki Kabushiki Kaisha
Hiromitsu Sugimoto
G01 - MEASURING TESTING