Shigeki Otani

Person

Tsukuba-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Diboride single crystal substrate, semiconductor device using this...
- Patent number 7,297,989
- Issue date Nov 20, 2007
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boride-based substrate for growing semiconducting layers thereon an...
- Patent number 6,566,218
- Issue date May 20, 2003
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth hexaboride electron-emitting material
- Patent number 6,027,670
- Issue date Feb 22, 2000
- National Institute for Research in Inorganic Materials
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth hexaboride electron-emitting material
- Patent number 5,837,165
- Issue date Nov 17, 1998
- National Institute for Research in Inorganic Materials
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of automatically growing a single crystal
- Patent number 5,690,732
- Issue date Nov 25, 1997
- National Institute for Research in Inorganic Materials
- Shigeki Otani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing yttrium 66 boride crystal for soft x-ray monoc...
- Patent number 5,336,362
- Issue date Aug 9, 1994
- National Institute for Research in Inorganic Materials
- Takaho Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lanthanum boride type single crystal and method for growing the same
- Patent number 5,238,527
- Issue date Aug 24, 1993
- National Institute for Research in Inorganic Materials
- Shigeki Otani
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Diboride single crystal substrate, semiconductor device using this...
- Publication number 20060102924
- Publication date May 18, 2006
- Shigeki Otani
- C30 - CRYSTAL GROWTH
Information Patent Application
Boride-based substrate for growing semiconducting layers thereon an...
- Publication number 20020038892
- Publication date Apr 4, 2002
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE and KYOCERA CORPORATION
- Shigeki Otani
- C30 - CRYSTAL GROWTH

Shigeki Otani

Person

Patents Grantslast 30 patents

Diboride single crystal substrate, semiconductor device using this...

Boride-based substrate for growing semiconducting layers thereon an...

Rare earth hexaboride electron-emitting material

Rare earth hexaboride electron-emitting material

Method of automatically growing a single crystal

Method for preparing yttrium 66 boride crystal for soft x-ray monoc...

Lanthanum boride type single crystal and method for growing the same

Patents Applicationslast 30 patents

Diboride single crystal substrate, semiconductor device using this...

Boride-based substrate for growing semiconducting layers thereon an...