Shigeki Takahashi

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive device, magnetic memory, and method of fabricating...
- Patent number 11,502,246
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic layer and magnetic device including the same
- Patent number 10,395,809
- Issue date Aug 27, 2019
- Samsung Electronics Co., Ltd.
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device
- Patent number 9,349,944
- Issue date May 24, 2016
- Samsung Electronics Co., Ltd.
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory and method of manufacturing the same
- Patent number 9,224,944
- Issue date Dec 29, 2015
- Kabushiki Kaisha Toshiba
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing multilayer film
- Patent number 9,082,961
- Issue date Jul 14, 2015
- Kabushiki Kaisha Toshiba
- Yuichi Ohsawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nonvolatile memory device
- Patent number 8,981,507
- Issue date Mar 17, 2015
- Kabushiki Kaisha Toshiba
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic memory
- Patent number 8,716,034
- Issue date May 6, 2014
- Kabushiki Kaisha Toshiba
- Yuichi Ohsawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory and method of manufacturing the same
- Patent number 8,710,605
- Issue date Apr 29, 2014
- Kabushiki Kaisha Toshiba
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory
- Patent number 8,531,875
- Issue date Sep 10, 2013
- Kabushiki Kaisha Toshiba
- Satoshi Yanagi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic recording element and nonvolatile memory device
- Patent number 8,488,375
- Issue date Jul 16, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 8,081,505
- Issue date Dec 20, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetic random access memory, method of...
- Patent number 8,058,080
- Issue date Nov 15, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element, magnetic memory and magnetic head
- Patent number 7,483,291
- Issue date Jan 27, 2009
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 7,470,963
- Issue date Dec 30, 2008
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 7,333,359
- Issue date Feb 19, 2008
- Kabushiki Kaisha Toshiba
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 7,291,506
- Issue date Nov 6, 2007
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic memory having a ferromagnetic tunneling junction
- Patent number 7,245,464
- Issue date Jul 17, 2007
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetoresistance effect device
- Patent number 7,140,096
- Issue date Nov 28, 2006
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 7,095,071
- Issue date Aug 22, 2006
- Kabushiki Kaisha Toshiba
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 7,054,187
- Issue date May 30, 2006
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic double tunnel junction element with asymmetric energy...
- Patent number 6,995,962
- Issue date Feb 7, 2006
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 6,965,138
- Issue date Nov 15, 2005
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor integrated circuit device and method of manufacturing...
- Patent number 6,958,932
- Issue date Oct 25, 2005
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magneto-resistance effect element, magnetic memory and magnetic head
- Patent number 6,956,765
- Issue date Oct 18, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 6,949,779
- Issue date Sep 27, 2005
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 6,934,184
- Issue date Aug 23, 2005
- Kabushiki Kaisha Toshiba
- Minoru Amano
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element having a ferromagnetic tunneling ju...
- Patent number 6,879,475
- Issue date Apr 12, 2005
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 6,873,023
- Issue date Mar 29, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,868,002
- Issue date Mar 15, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic double tunnel junction element with asymmetric energy...
- Patent number 6,839,206
- Issue date Jan 4, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE DEVICES AND SEMICONDUCTOR DEVICES
- Publication number 20240381782
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Namhai PHAM
Information Patent Application
MAGNETORESISTIVE DEVICE, MAGNETIC MEMORY, AND METHOD OF FABRICATING...
- Publication number 20210384417
- Publication date Dec 9, 2021
- Samsung Electronics Co., Ltd.
- SHIGEKI TAKAHASHI
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME
- Publication number 20170330668
- Publication date Nov 16, 2017
- Shigeki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
- Publication number 20160359107
- Publication date Dec 8, 2016
- Kabushiki Kaisha Toshiba
- Yuichi Ohsawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20150188034
- Publication date Jul 2, 2015
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140206106
- Publication date Jul 24, 2014
- Kabushiki Kaisha Toshiba
- Shigeki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFICATION OUTPUT CONTROL DEVICE AND AMPLIFICATION OUTPUT CONTRO...
- Publication number 20140118068
- Publication date May 1, 2014
- Fujitsu Limited
- Katsuhiko KAWASAKI
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
- Publication number 20130248355
- Publication date Sep 26, 2013
- Kabushiki Kaisha Toshiba
- Yuichi Ohsawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE
- Publication number 20130029431
- Publication date Jan 31, 2013
- Kabushiki Kaisha Toshiba
- Shigeki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MULTILAYER FILM
- Publication number 20120244640
- Publication date Sep 27, 2012
- Yuichi OHSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MAGNETIC MEMORY
- Publication number 20120244639
- Publication date Sep 27, 2012
- Yuichi OHSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20120230091
- Publication date Sep 13, 2012
- Satoshi YANAGI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120074511
- Publication date Mar 29, 2012
- Kabushiki Kaisha Toshiba
- Shigeki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE
- Publication number 20120068281
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- DAISUKE SAIDA
- G11 - INFORMATION STORAGE
Information Patent Application
WIRELESS COMMUNICATION PERFORMANCE TEST METHOD, WIRELESS COMMUNICAT...
- Publication number 20110053518
- Publication date Mar 3, 2011
- FUJITSU LIMITED
- Noriaki SHINDO
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHOD OF MANUFACTURING A MAGNETIC RANDOM ACCESS MEMORY, METHOD OF...
- Publication number 20100197044
- Publication date Aug 5, 2010
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100102407
- Publication date Apr 29, 2010
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100097846
- Publication date Apr 22, 2010
- Kabushiki Kaisha Toshiba
- Kuniaki Sugiura
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUF...
- Publication number 20100078763
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Keiji HOSOTANI
- G11 - INFORMATION STORAGE
Information Patent Application
Magneto-resistance effect element, magnetic memory and magnetic head
- Publication number 20060034118
- Publication date Feb 16, 2006
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive element and magnetic memory
- Publication number 20050280043
- Publication date Dec 22, 2005
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit device and method of manufacturing...
- Publication number 20050274984
- Publication date Dec 15, 2005
- Keiji Hosotani
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic memory device and method of manufacturing the same
- Publication number 20050254289
- Publication date Nov 17, 2005
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Magnetic random access memory
- Publication number 20050199926
- Publication date Sep 15, 2005
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect element, magnetic memory and magnetic head
- Publication number 20050170218
- Publication date Aug 4, 2005
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory
- Publication number 20050083745
- Publication date Apr 21, 2005
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance effect device, method of manufacturing the same,...
- Publication number 20050078417
- Publication date Apr 14, 2005
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic double tunnel junction element with asymmetric energy...
- Publication number 20050078418
- Publication date Apr 14, 2005
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device and method of manufacturing the same
- Publication number 20050020011
- Publication date Jan 27, 2005
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Magnetic memory
- Publication number 20040257866
- Publication date Dec 23, 2004
- Kabushiki Kaisha Toshiba
- Minoru Amano
- G11 - INFORMATION STORAGE

Shigeki Takahashi

Person

Patents Grantslast 30 patents

Magnetoresistive device, magnetic memory, and method of fabricating...

Perpendicular magnetic layer and magnetic device including the same

Magnetic tunnel junction device

Magnetic memory and method of manufacturing the same

Method of manufacturing multilayer film

Method for manufacturing nonvolatile memory device

Method of manufacturing magnetic memory

Magnetic memory and method of manufacturing the same

Magnetic memory

Magnetic recording element and nonvolatile memory device

Magnetoresistive element and method of manufacturing the same

Method of manufacturing a magnetic random access memory, method of...

Magneto-resistance effect element, magnetic memory and magnetic head

Magnetoresistive element and magnetic memory

Magnetic random access memory

Magnetic memory device and method of manufacturing the same

Magnetic memory having a ferromagnetic tunneling junction

Method of manufacturing a magnetoresistance effect device

Magnetic random access memory

Magnetic memory

Ferromagnetic double tunnel junction element with asymmetric energy...

Magnetic memory device and method of manufacturing the same

Semiconductor integrated circuit device and method of manufacturing...

Magneto-resistance effect element, magnetic memory and magnetic head

Magnetoresistive element and magnetic memory

Magnetic memory

Magnetoresistive effect element having a ferromagnetic tunneling ju...

Magnetic random access memory

Magnetic memory with reduced write current

Ferromagnetic double tunnel junction element with asymmetric energy...

Patents Applicationslast 30 patents

MAGNETORESISTIVE DEVICES AND SEMICONDUCTOR DEVICES

MAGNETORESISTIVE DEVICE, MAGNETIC MEMORY, AND METHOD OF FABRICATING...

PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

MAGNETIC TUNNEL JUNCTION DEVICE

MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME

AMPLIFICATION OUTPUT CONTROL DEVICE AND AMPLIFICATION OUTPUT CONTRO...

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE

METHOD OF MANUFACTURING MULTILAYER FILM

METHOD OF MANUFACTURING MAGNETIC MEMORY

MAGNETIC MEMORY

MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME

MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE

WIRELESS COMMUNICATION PERFORMANCE TEST METHOD, WIRELESS COMMUNICAT...

METHOD OF MANUFACTURING A MAGNETIC RANDOM ACCESS MEMORY, METHOD OF...

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUF...

Magneto-resistance effect element, magnetic memory and magnetic head

Magnetoresistive element and magnetic memory

Semiconductor integrated circuit device and method of manufacturing...

Magnetic memory device and method of manufacturing the same

Magnetic random access memory

Magnetoresistive effect element, magnetic memory and magnetic head

Magnetic memory

Magnetoresistance effect device, method of manufacturing the same,...

Ferromagnetic double tunnel junction element with asymmetric energy...

Magnetic memory device and method of manufacturing the same

Magnetic memory