Shigenobu Maeda

Person

Tokyo, 100, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device, method of manufacturing same and method of de...
- Patent number 7,741,679
- Issue date Jun 22, 2010
- Renesas Technology Corp.
- Yasuo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,723,790
- Issue date May 25, 2010
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a capacitance
- Patent number 7,608,879
- Issue date Oct 27, 2009
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having impurity region...
- Patent number 7,556,997
- Issue date Jul 7, 2009
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor MIS transistor formed on SOI semiconductor substrate
- Patent number 7,531,878
- Issue date May 12, 2009
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor on an SOI substrate with a body contact and a gate i...
- Patent number 7,504,291
- Issue date Mar 17, 2009
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench isolation and method of fabric...
- Patent number 7,494,883
- Issue date Feb 24, 2009
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,482,658
- Issue date Jan 27, 2009
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having impurity region...
- Patent number 7,470,582
- Issue date Dec 30, 2008
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including insulated gate type transistor and i...
- Patent number 7,456,464
- Issue date Nov 25, 2008
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,439,587
- Issue date Oct 21, 2008
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor layer having various thickness
- Patent number 7,358,569
- Issue date Apr 15, 2008
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a capacitance
- Patent number 7,339,238
- Issue date Mar 4, 2008
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method of fabricating the same
- Patent number 7,321,152
- Issue date Jan 22, 2008
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing same and method of de...
- Patent number 7,303,950
- Issue date Dec 4, 2007
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor on an SOI substrate with a body contact and a gate i...
- Patent number 7,300,847
- Issue date Nov 27, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having impurity region...
- Patent number 7,297,585
- Issue date Nov 20, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and manufacturing method thereof
- Patent number 7,291,542
- Issue date Nov 6, 2007
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having SOI structure including a load resistor...
- Patent number 7,256,463
- Issue date Aug 14, 2007
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,193,272
- Issue date Mar 20, 2007
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method of fabricating the same
- Patent number 7,187,040
- Issue date Mar 6, 2007
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench isolation and method of fabric...
- Patent number 7,183,167
- Issue date Feb 27, 2007
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including insulated gate type transistor and i...
- Patent number 7,176,515
- Issue date Feb 13, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 7,164,172
- Issue date Jan 16, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including insulated gate type transistor with...
- Patent number 7,157,765
- Issue date Jan 2, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having trench isolation
- Patent number 7,144,764
- Issue date Dec 5, 2006
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of designing semiconductor device, semiconductor device and...
- Patent number 7,129,543
- Issue date Oct 31, 2006
- Renesas Technology Corp.
- Shigenobu Maeda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including a capacitance
- Patent number 7,112,835
- Issue date Sep 26, 2006
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method of fabricating the same
- Patent number 7,112,854
- Issue date Sep 26, 2006
- Renesas Technology Corporation
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 7,109,553
- Issue date Sep 19, 2006
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090014797
- Publication date Jan 15, 2009
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME AND METHOD OF DE...
- Publication number 20080315313
- Publication date Dec 25, 2008
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR ON AN SOI SUBSTRATE WITH A BODY CONTACT AND A GATE I...
- Publication number 20080081436
- Publication date Apr 3, 2008
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having impurity region...
- Publication number 20080054414
- Publication date Mar 6, 2008
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having impurity region...
- Publication number 20080050864
- Publication date Feb 28, 2008
- RENESAS TECHNONOLY CORP.
- Shigenobu MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080035996
- Publication date Feb 14, 2008
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20080032487
- Publication date Feb 7, 2008
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20080032486
- Publication date Feb 7, 2008
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080017924
- Publication date Jan 24, 2008
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A CAPACITANCE
- Publication number 20070296009
- Publication date Dec 27, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070138560
- Publication date Jun 21, 2007
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070132028
- Publication date Jun 14, 2007
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE TYPE TRANSISTOR AND I...
- Publication number 20070108494
- Publication date May 17, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070087509
- Publication date Apr 19, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having impurity region...
- Publication number 20070034952
- Publication date Feb 15, 2007
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a trench isolation and method of fabric...
- Publication number 20070032001
- Publication date Feb 8, 2007
- Renesas Technology Corp.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a capacitance
- Publication number 20060289906
- Publication date Dec 28, 2006
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20060273394
- Publication date Dec 7, 2006
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-film transistor and method of fabricating the same
- Publication number 20060267012
- Publication date Nov 30, 2006
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including insulated gate type transistor and i...
- Publication number 20060267105
- Publication date Nov 30, 2006
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of designing semiconductor device, semiconductor device and...
- Publication number 20060267096
- Publication date Nov 30, 2006
- Renesas Technology Corp.
- Shigenobu Maeda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of manufacturing semiconductor device having trench isolation
- Publication number 20060249756
- Publication date Nov 9, 2006
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060186474
- Publication date Aug 24, 2006
- Renesas Technology Corp.
- Takuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor on an SOI substrate with a body contact and a gate i...
- Publication number 20060134843
- Publication date Jun 22, 2006
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device formed on insulating layer and method of manuf...
- Publication number 20060086934
- Publication date Apr 27, 2006
- RENESAS TECHNOLOGY, INC.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including insulated gate type transistor and i...
- Publication number 20060006434
- Publication date Jan 12, 2006
- Renesas Technology Corp.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer and manufacturing method thereof
- Publication number 20060006423
- Publication date Jan 12, 2006
- Renesas Technology Corpo.
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20050275023
- Publication date Dec 15, 2005
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050184342
- Publication date Aug 25, 2005
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-film transistor and method of fabricating the same
- Publication number 20050167673
- Publication date Aug 4, 2005
- Renesas Technology Corp.
- Shigeto Maegawa
- H01 - BASIC ELECTRIC ELEMENTS

Shigenobu Maeda

Person

Patents Grantslast 30 patents

Semiconductor device, method of manufacturing same and method of de...

Semiconductor device and method of manufacturing the same

Semiconductor device including a capacitance

Method of manufacturing semiconductor device having impurity region...

Semiconductor MIS transistor formed on SOI semiconductor substrate

MOS transistor on an SOI substrate with a body contact and a gate i...

Semiconductor device having a trench isolation and method of fabric...

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device having impurity region...

Semiconductor device including insulated gate type transistor and i...

Semiconductor device and method of manufacturing the same

Semiconductor device with semiconductor layer having various thickness

Semiconductor device including a capacitance

Thin-film transistor and method of fabricating the same

Semiconductor device, method of manufacturing same and method of de...

MOS transistor on an SOI substrate with a body contact and a gate i...

Method of manufacturing semiconductor device having impurity region...

Semiconductor wafer and manufacturing method thereof

Semiconductor device having SOI structure including a load resistor...

Semiconductor device and method of manufacturing the same

Thin-film transistor and method of fabricating the same

Semiconductor device having a trench isolation and method of fabric...

Semiconductor device including insulated gate type transistor and i...

Semiconductor device and method of manufacturing same

Semiconductor device including insulated gate type transistor with...

Method of manufacturing semiconductor device having trench isolation

Method of designing semiconductor device, semiconductor device and...

Semiconductor device including a capacitance

Thin-film transistor and method of fabricating the same

Semiconductor device and method of manufacturing same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME AND METHOD OF DE...

MOS TRANSISTOR ON AN SOI SUBSTRATE WITH A BODY CONTACT AND A GATE I...

Method of manufacturing semiconductor device having impurity region...

Method of manufacturing semiconductor device having impurity region...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING A CAPACITANCE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE TYPE TRANSISTOR AND I...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Method of manufacturing semiconductor device having impurity region...

Semiconductor device having a trench isolation and method of fabric...

Semiconductor device including a capacitance

Semiconductor device and method of manufacturing same

Thin-film transistor and method of fabricating the same

Semiconductor device including insulated gate type transistor and i...

Method of designing semiconductor device, semiconductor device and...

Method of manufacturing semiconductor device having trench isolation

Semiconductor device and method of manufacturing the same

MOS transistor on an SOI substrate with a body contact and a gate i...

Semiconductor device formed on insulating layer and method of manuf...

Semiconductor device including insulated gate type transistor and i...

Semiconductor wafer and manufacturing method thereof

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing the same

Thin-film transistor and method of fabricating the same