Shigetaka Tomiya

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Charge and discharge control device, charge and discharge control m...
- Patent number 10,868,342
- Issue date Dec 15, 2020
- Murata Manufacturing Co., Ltd.
- Masatomo Tanaka
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Secondary battery, evaluation method and production method therefor...
- Patent number 10,411,307
- Issue date Sep 10, 2019
- Murata Manufacturing Co., Ltd.
- Masatomo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based III-V group compound semiconductor
- Patent number 9,911,894
- Issue date Mar 6, 2018
- Sony Corporation
- Akira Ohmae
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-emitting element
- Patent number 9,871,349
- Issue date Jan 16, 2018
- Sony Corporation
- Kunihiko Tasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a nitride-based III-V Group compound semiconductor
- Patent number 9,034,738
- Issue date May 19, 2015
- Sony Corporation
- Akira Ohmae
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a nitride-based III-V group compound semiconductor
- Patent number 8,859,401
- Issue date Oct 14, 2014
- Sony Corporation
- Akira Ohmae
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fine particles of core-shell structure and functional device incorp...
- Patent number 8,361,924
- Issue date Jan 29, 2013
- Sony Corporation
- Shinji Tanaka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting diode, method for making light-emitting diode, integ...
- Patent number 7,754,504
- Issue date Jul 13, 2010
- Sony Corporation
- Akira Ohmae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor light emitting device, semi...
- Patent number 7,176,499
- Issue date Feb 13, 2007
- Sony Corporation
- Tsunenori Asatsuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor laser
- Patent number 7,135,772
- Issue date Nov 14, 2006
- Sony Corporation
- Shigetaka Tomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor light emitting device, semi...
- Patent number 7,091,056
- Issue date Aug 15, 2006
- Sony Corporation
- Tsunenori Asatsuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor laser
- Patent number 6,891,268
- Issue date May 10, 2005
- Sony Corporation
- Shigetaka Tomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth method of a nitride III-V compound semiconductor, manufactur...
- Patent number 6,682,991
- Issue date Jan 27, 2004
- Sony Corporation
- Tomonori Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing compound semiconductor substrate
- Patent number 6,667,252
- Issue date Dec 23, 2003
- Sony Corporation
- Takao Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser, and manufacturing method thereof, semiconducto...
- Patent number 6,577,662
- Issue date Jun 10, 2003
- Sony Corporation
- Takeharu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor thin film of group III nitride comp...
- Patent number 6,576,533
- Issue date Jun 10, 2003
- Sony Corporation
- Shigetaka Tomiya
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Semiconductor element and semiconductor light-emitting and semicond...
- Patent number 6,069,367
- Issue date May 30, 2000
- Sony Corporation
- Shigetaka Tomiya
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting device with a Mg superlattice structure
- Patent number 5,828,086
- Issue date Oct 27, 1998
- Sony Corporation
- Akira Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxial growth method of semiconductor
- Patent number 5,766,345
- Issue date Jun 16, 1998
- Sony Corporation
- Shigetaka Tomiya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting device with defect decomposing and blo...
- Patent number 5,665,977
- Issue date Sep 9, 1997
- Sony Corporation
- Akira Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having an active layer with regions with diffe...
- Patent number 5,418,374
- Issue date May 23, 1995
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHARGE AND DISCHARGE CONTROL DEVICE, CHARGE AND DISCHARGE CONTROL M...
- Publication number 20190054837
- Publication date Feb 21, 2019
- MURATA MANUFACTURING CO., LTD.
- Masatomo TANAKA
- B60 - VEHICLES IN GENERAL
Information Patent Application
SECONDARY BATTERY, EVALUATION METHOD AND PRODUCTION METHOD THEREFOR...
- Publication number 20180269540
- Publication date Sep 20, 2018
- SONY CORPORATION
- MASATOMO TANAKA
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
LIGHT-EMITTING ELEMENT
- Publication number 20160268776
- Publication date Sep 15, 2016
- Sony Corporation
- KUNIHIKO TASAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR
- Publication number 20150228846
- Publication date Aug 13, 2015
- SONY CORPORATION
- Akira Ohmae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING A...
- Publication number 20130143357
- Publication date Jun 6, 2013
- SONY CORPORATION
- Osamu Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20130022070
- Publication date Jan 24, 2013
- SONY CORPORATION
- Takashi Tange
- B82 - NANO-TECHNOLOGY
Information Patent Application
FINE PARTICLES OF CORE-SHELL STRUCTURE AND FUNCTIONAL DEVICE INCORP...
- Publication number 20120046164
- Publication date Feb 23, 2012
- SONY CORPORATION
- Shinji Tanaka
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED...
- Publication number 20110212559
- Publication date Sep 1, 2011
- SONY CORPORATION
- Akira Ohmae
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEG...
- Publication number 20100308349
- Publication date Dec 9, 2010
- SONY CORPORATION
- Akira Ohmae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gan-Based III-V Compound Semiconductor Light-Emitting Element and M...
- Publication number 20080217632
- Publication date Sep 11, 2008
- Shigetaka Tomiya
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMI...
- Publication number 20070117357
- Publication date May 24, 2007
- Tsunenori Asatsuma
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED...
- Publication number 20070085093
- Publication date Apr 19, 2007
- Akira Ohmae
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEG...
- Publication number 20060258027
- Publication date Nov 16, 2006
- Akira Ohmae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor light emitting device, semi...
- Publication number 20050227392
- Publication date Oct 13, 2005
- Tsunenori Asatsuma
- C30 - CRYSTAL GROWTH
Information Patent Application
Detailed description of the presently preferred embodiments
- Publication number 20050167836
- Publication date Aug 4, 2005
- Sony Corporation
- Shigetaka Tomiya
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor laser
- Publication number 20050167835
- Publication date Aug 4, 2005
- Sony Corporation
- Shigetaka Tomiya
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of manufacturing a semiconductor light emitting device, semi...
- Publication number 20040164308
- Publication date Aug 26, 2004
- Tsunenori Asatsuma
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor laser
- Publication number 20040012011
- Publication date Jan 22, 2004
- Shigetaka Tomiya
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of manufacturing compound semiconductor substrate
- Publication number 20020146912
- Publication date Oct 10, 2002
- Takao Miyajima
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor thin film, semiconductor element and semiconductor de...
- Publication number 20020115267
- Publication date Aug 22, 2002
- Shigetaka Tomiya
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

Shigetaka Tomiya

Person

Patents Grantslast 30 patents

Charge and discharge control device, charge and discharge control m...

Secondary battery, evaluation method and production method therefor...

Nitride-based III-V group compound semiconductor

Light-emitting element

Method for growing a nitride-based III-V Group compound semiconductor

Method for growing a nitride-based III-V group compound semiconductor

Fine particles of core-shell structure and functional device incorp...

Light-emitting diode, method for making light-emitting diode, integ...

Method of manufacturing a semiconductor light emitting device, semi...

Nitride semiconductor laser

Method of manufacturing a semiconductor light emitting device, semi...

Nitride semiconductor laser

Growth method of a nitride III-V compound semiconductor, manufactur...

Method of manufacturing compound semiconductor substrate

Semiconductor laser, and manufacturing method thereof, semiconducto...

Method of forming semiconductor thin film of group III nitride comp...

Semiconductor element and semiconductor light-emitting and semicond...

Semiconductor light emitting device with a Mg superlattice structure

Epitaxial growth method of semiconductor

Semiconductor light emitting device with defect decomposing and blo...

Semiconductor device having an active layer with regions with diffe...

Patents Applicationslast 30 patents

CHARGE AND DISCHARGE CONTROL DEVICE, CHARGE AND DISCHARGE CONTROL M...

SECONDARY BATTERY, EVALUATION METHOD AND PRODUCTION METHOD THEREFOR...

LIGHT-EMITTING ELEMENT

METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR

METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING A...

SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF

FINE PARTICLES OF CORE-SHELL STRUCTURE AND FUNCTIONAL DEVICE INCORP...

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED...

LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEG...

Gan-Based III-V Compound Semiconductor Light-Emitting Element and M...

METHOD OF MANUFACTURING A SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMI...

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED...

LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEG...

Method of manufacturing a semiconductor light emitting device, semi...

Detailed description of the presently preferred embodiments

Nitride semiconductor laser

Method of manufacturing a semiconductor light emitting device, semi...

Nitride semiconductor laser

Method of manufacturing compound semiconductor substrate

Semiconductor thin film, semiconductor element and semiconductor de...