Shih-Chung Lee

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Error detection method for memory device
- Patent number 11,797,193
- Issue date Oct 24, 2023
- Macronix International Co., Ltd.
- Shih-Chung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-linear temperature compensation for wider range operation tempe...
- Patent number 11,562,797
- Issue date Jan 24, 2023
- SanDisk Technologies LLC
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Block quality classification at testing for non-volatile memory, an...
- Patent number 11,397,635
- Issue date Jul 26, 2022
- SanDisk Technologies LLC
- Shih-Chung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programming dummy memory cells in erase operation to reduce thresho...
- Patent number 10,373,697
- Issue date Aug 6, 2019
- SanDisk Technologies LLC
- Chun-Hung Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with prior state sensing
- Patent number 9,548,130
- Issue date Jan 17, 2017
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block erase for block programming in non-volatile memory
- Patent number 9,543,023
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Chun-hung Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Verification process for non-volatile storage
- Patent number RE46264
- Issue date Jan 3, 2017
- SanDisk Technologies LLC
- Gerrit Jan Hemink
Information Patent Grant
Erase verify in non-volatile memory
- Patent number 9,343,160
- Issue date May 17, 2016
- SanDisk Technologies Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Compensating source side resistance versus word line
- Patent number 9,343,164
- Issue date May 17, 2016
- SanDisk Technologies Inc.
- Huai-Yuan Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming non-volatile storage including reducing impact from oth...
- Patent number RE45910
- Issue date Mar 1, 2016
- SanDisk Technologies Inc.
- Yingda Dong
- 001 -
Information Patent Grant
Dynamic erase depth for improved endurance of non-volatile memory
- Patent number 9,214,240
- Issue date Dec 15, 2015
- SanDisk Technologies Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Program condition dependent bit line charge rate
- Patent number 8,995,211
- Issue date Mar 31, 2015
- SanDisk Technologies Inc.
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Partitioned erase and erase verification in non-volatile memory
- Patent number 8,958,249
- Issue date Feb 17, 2015
- SanDisk Technologies Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile storage with process that reduces read disturb on end...
- Patent number 8,942,043
- Issue date Jan 27, 2015
- SanDisk Technologies Inc.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Grant
Selected word line dependent select gate diffusion region voltage d...
- Patent number 8,804,430
- Issue date Aug 12, 2014
- SanDisk Technologies Inc.
- Chun-Hung Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramping pass voltage to enhance channel boost in memory device
- Patent number 8,644,075
- Issue date Feb 4, 2014
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramping pass voltage to enhance channel boost in memory device, wit...
- Patent number 8,526,233
- Issue date Sep 3, 2013
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing neighbor read disturb
- Patent number 8,472,266
- Issue date Jun 25, 2013
- SanDisk Technologies Inc.
- Anubhav Khandelwal
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming non-volatile storage including reducing impact from oth...
- Patent number 8,218,366
- Issue date Jul 10, 2012
- SanDisk Technologies Inc.
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Verification process for non-volatile storage
- Patent number 8,218,367
- Issue date Jul 10, 2012
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing program disturb in non-volatile storage
- Patent number 8,189,378
- Issue date May 29, 2012
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus with reduced program disturb in non-volatile storage
- Patent number 8,184,478
- Issue date May 22, 2012
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive erase and soft programming for memory
- Patent number 8,081,519
- Issue date Dec 20, 2011
- SanDisk Technologies Inc.
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Verification process for non-volatile storage
- Patent number 7,978,527
- Issue date Jul 12, 2011
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive erase and soft programming for memory
- Patent number 7,839,690
- Issue date Nov 23, 2010
- SanDisk Corporation
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Program time adjustment as function of program voltage for improved...
- Patent number 7,675,780
- Issue date Mar 9, 2010
- SanDisk Corporation
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems for coarse/fine program verification in non-volatile memory...
- Patent number 7,599,224
- Issue date Oct 6, 2009
- SanDisk Corporation
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Faster programming of highest multi-level state for non-volatile me...
- Patent number 7,596,031
- Issue date Sep 29, 2009
- SanDisk Corporation
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Coarse/fine program verification in non-volatile memory using diffe...
- Patent number 7,508,715
- Issue date Mar 24, 2009
- SanDisk Corporation
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-boosting method for flash memory cells
- Patent number 7,466,590
- Issue date Dec 16, 2008
- SanDisk Corporation
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ERROR DETECTION METHOD FOR MEMORY DEVICE
- Publication number 20230214127
- Publication date Jul 6, 2023
- Macronix International Co., Ltd.
- Shih-Chung LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-LINEAR TEMPERATURE COMPENSATION FOR WIDER RANGE OPERATION TEMPE...
- Publication number 20220180949
- Publication date Jun 9, 2022
- SANDISK TECHNOLOGIES LLC
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Application
BLOCK QUALITY CLASSIFICATION AT TESTING FOR NON-VOLATILE MEMORY, AN...
- Publication number 20210173734
- Publication date Jun 10, 2021
- SANDISK TECHNOLOGIES LLC
- Shih-Chung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMING DUMMY MEMORY CELLS IN ERASE OPERATION TO REDUCE THRESHO...
- Publication number 20190252029
- Publication date Aug 15, 2019
- SanDisk Technologies LLC
- Chun-Hung Lai
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE BIT LINE VOLTAGE SENSING FOR NON-VOLATILE MEMORY
- Publication number 20160300620
- Publication date Oct 13, 2016
- SANDISK TECHNOLOGIES INC.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH PRIOR STATE SENSING
- Publication number 20160300619
- Publication date Oct 13, 2016
- SANDISK TECHNOLOGIES INC.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
Partial Block Erase For Block Programming In Non-Volatile Memory
- Publication number 20160217860
- Publication date Jul 28, 2016
- SANDISK TECHNOLOGIES INC.
- Chun-hung Lai
- G11 - INFORMATION STORAGE
Information Patent Application
Compensating Source Side Resistance Versus Word Line
- Publication number 20150255166
- Publication date Sep 10, 2015
- SANDISK TECHNOLOGIES INC.
- Huai-Yuan Tseng
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE WITH PROCESS THAT REDUCES READ DISTURB ON END...
- Publication number 20140247663
- Publication date Sep 4, 2014
- SANDISK TECHNOLOGIES INC.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
PARTITIONED ERASE AND ERASE VERIFICATION IN NON-VOLATILE MEMORY
- Publication number 20140247667
- Publication date Sep 4, 2014
- SANDISK TECHNOLOGIES INC.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC ERASE DEPTH FOR IMPROVED ENDURANCE OF NON-VOLATILE MEMORY
- Publication number 20140247666
- Publication date Sep 4, 2014
- SanDisk Technologies, Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
Ramping Pass Voltage To Enhance Channel Boost In Memory Device
- Publication number 20130314987
- Publication date Nov 28, 2013
- SANDISK TECHNOLOGIES INC.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM CONDITION DEPENDENT BIT LINE CHARGE RATE
- Publication number 20130279258
- Publication date Oct 24, 2013
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTED WORD LINE DEPENDENT SELECT GATE DIFFUSION REGION VOLTAGE D...
- Publication number 20130250689
- Publication date Sep 26, 2013
- Chun-Hung Lai
- G11 - INFORMATION STORAGE
Information Patent Application
Ramping Pass Voltage To Enhance Channel Boost In Memory Device, Wit...
- Publication number 20120300550
- Publication date Nov 29, 2012
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING NEIGHBOR READ DISTURB
- Publication number 20120250414
- Publication date Oct 4, 2012
- Anubhav Khandelwal
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING NON-VOLATILE STORAGE INCLUDNG REDUCING IMPACT FROM OTHE...
- Publication number 20110255345
- Publication date Oct 20, 2011
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
VERIFICATION PROCESS FOR NON-VOLATILE STORAGE
- Publication number 20110235423
- Publication date Sep 29, 2011
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERASE AND SOFT PROGRAMMING FOR MEMORY
- Publication number 20110019483
- Publication date Jan 27, 2011
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERASE AND SOFT PROGRAMMING FOR MEMORY
- Publication number 20100149881
- Publication date Jun 17, 2010
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Application
VERIFICATION PROCESS FOR NON-VOLATILE STORAGE
- Publication number 20090296475
- Publication date Dec 3, 2009
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
COARSE/FINE PROGRAM VERIFICATION IN NON-VOLATILE MEMORY USING DIFFE...
- Publication number 20090010067
- Publication date Jan 8, 2009
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Systems for Coarse/Fine Program Verification in Non-Volatile Memory...
- Publication number 20090010068
- Publication date Jan 8, 2009
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE WITH BOOSTING USING CHANNEL ISOLATION SWITCHING
- Publication number 20080279008
- Publication date Nov 13, 2008
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
BOOSTING FOR NON-VOLATILE STORAGE USING CHANNEL ISOLATION SWITCHING
- Publication number 20080279007
- Publication date Nov 13, 2008
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
Program Time Adjustment as Function of Program Voltage For Improved...
- Publication number 20080137432
- Publication date Jun 12, 2008
- Shih-Chung Lee
- G11 - INFORMATION STORAGE
Information Patent Application
FASTER PROGRAMMING OF HIGHEST MULTI-LEVEL STATE FOR NON-VOLATILE ME...
- Publication number 20080101126
- Publication date May 1, 2008
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS WITH REDUCED PROGRAM DISTURB IN NON-VOLATILE STORAGE
- Publication number 20080084748
- Publication date Apr 10, 2008
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING PROGRAM DISTURB IN NON-VOLATILE STORAGE
- Publication number 20080084747
- Publication date Apr 10, 2008
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
Program time adjustment as function of program voltage for improved...
- Publication number 20070236991
- Publication date Oct 11, 2007
- Shih-Chung Lee
- G11 - INFORMATION STORAGE

Shih-Chung Lee

Person

Patents Grantslast 30 patents

Error detection method for memory device

Non-linear temperature compensation for wider range operation tempe...

Block quality classification at testing for non-volatile memory, an...

Programming dummy memory cells in erase operation to reduce thresho...

Non-volatile memory with prior state sensing

Partial block erase for block programming in non-volatile memory

Verification process for non-volatile storage

Erase verify in non-volatile memory

Compensating source side resistance versus word line

Programming non-volatile storage including reducing impact from oth...

Dynamic erase depth for improved endurance of non-volatile memory

Program condition dependent bit line charge rate

Partitioned erase and erase verification in non-volatile memory

Non-volatile storage with process that reduces read disturb on end...

Selected word line dependent select gate diffusion region voltage d...

Ramping pass voltage to enhance channel boost in memory device

Ramping pass voltage to enhance channel boost in memory device, wit...

Reducing neighbor read disturb

Programming non-volatile storage including reducing impact from oth...

Verification process for non-volatile storage

Reducing program disturb in non-volatile storage

Apparatus with reduced program disturb in non-volatile storage

Adaptive erase and soft programming for memory

Verification process for non-volatile storage

Adaptive erase and soft programming for memory

Program time adjustment as function of program voltage for improved...

Systems for coarse/fine program verification in non-volatile memory...

Faster programming of highest multi-level state for non-volatile me...

Coarse/fine program verification in non-volatile memory using diffe...

Self-boosting method for flash memory cells

Patents Applicationslast 30 patents

ERROR DETECTION METHOD FOR MEMORY DEVICE

NON-LINEAR TEMPERATURE COMPENSATION FOR WIDER RANGE OPERATION TEMPE...

BLOCK QUALITY CLASSIFICATION AT TESTING FOR NON-VOLATILE MEMORY, AN...

PROGRAMMING DUMMY MEMORY CELLS IN ERASE OPERATION TO REDUCE THRESHO...

MULTIPLE BIT LINE VOLTAGE SENSING FOR NON-VOLATILE MEMORY

NON-VOLATILE MEMORY WITH PRIOR STATE SENSING

Partial Block Erase For Block Programming In Non-Volatile Memory

Compensating Source Side Resistance Versus Word Line

NON-VOLATILE STORAGE WITH PROCESS THAT REDUCES READ DISTURB ON END...

PARTITIONED ERASE AND ERASE VERIFICATION IN NON-VOLATILE MEMORY

DYNAMIC ERASE DEPTH FOR IMPROVED ENDURANCE OF NON-VOLATILE MEMORY

Ramping Pass Voltage To Enhance Channel Boost In Memory Device

PROGRAM CONDITION DEPENDENT BIT LINE CHARGE RATE

SELECTED WORD LINE DEPENDENT SELECT GATE DIFFUSION REGION VOLTAGE D...

Ramping Pass Voltage To Enhance Channel Boost In Memory Device, Wit...

REDUCING NEIGHBOR READ DISTURB

PROGRAMMING NON-VOLATILE STORAGE INCLUDNG REDUCING IMPACT FROM OTHE...

VERIFICATION PROCESS FOR NON-VOLATILE STORAGE

ADAPTIVE ERASE AND SOFT PROGRAMMING FOR MEMORY

ADAPTIVE ERASE AND SOFT PROGRAMMING FOR MEMORY

VERIFICATION PROCESS FOR NON-VOLATILE STORAGE

COARSE/FINE PROGRAM VERIFICATION IN NON-VOLATILE MEMORY USING DIFFE...

Systems for Coarse/Fine Program Verification in Non-Volatile Memory...

NON-VOLATILE STORAGE WITH BOOSTING USING CHANNEL ISOLATION SWITCHING

BOOSTING FOR NON-VOLATILE STORAGE USING CHANNEL ISOLATION SWITCHING

Program Time Adjustment as Function of Program Voltage For Improved...

FASTER PROGRAMMING OF HIGHEST MULTI-LEVEL STATE FOR NON-VOLATILE ME...

APPARATUS WITH REDUCED PROGRAM DISTURB IN NON-VOLATILE STORAGE

REDUCING PROGRAM DISTURB IN NON-VOLATILE STORAGE

Program time adjustment as function of program voltage for improved...