Shih-Tzung Su

Person

Shulin City Taipei Country, TW

People

Patents Grantslast 30 patents

Information Patent Grant
MOSFET with distributed doped P-shield zones under trenches
- Patent number 12,057,482
- Issue date Aug 6, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate power device and its method of fabrication
- Patent number 11,289,596
- Issue date Mar 29, 2022
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOS-gated device with high dopant concentration N-we...
- Patent number 10,157,983
- Issue date Dec 18, 2018
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having lateral channel, vertical current path, and P-r...
- Patent number 9,947,779
- Issue date Apr 17, 2018
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having planar channel, vertical current path, and top...
- Patent number 9,761,702
- Issue date Sep 12, 2017
- MaxPower Semiconductor
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET having planar channel and its method of fabri...
- Patent number 9,461,127
- Issue date Oct 4, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET having planar channel and its method of fabri...
- Patent number 9,184,248
- Issue date Nov 10, 2015
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET with planar channel and vertical field plate
- Patent number 9,093,522
- Issue date Jul 28, 2015
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with embedded recessed field plate and methods of fabr...
- Patent number 8,581,341
- Issue date Nov 12, 2013
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination with improved breakdown voltage
- Patent number 8,294,235
- Issue date Oct 23, 2012
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination with improved breakdown voltage
- Patent number 7,923,804
- Issue date Apr 12, 2011
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method of manufacture utilizing two masks
- Patent number 7,799,642
- Issue date Sep 21, 2010
- Inpower Semiconductor Co., Ltd.
- Shih Tzung Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method of manufacture utilizing four masks
- Patent number 7,687,352
- Issue date Mar 30, 2010
- Inpower Semiconductor Co., Ltd.
- Shih Tzung Su
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...
- Publication number 20240347585
- Publication date Oct 17, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES
- Publication number 20220052170
- Publication date Feb 17, 2022
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE POWER DEVICE AND ITS METHOD OF FABRICATION
- Publication number 20200273987
- Publication date Aug 27, 2020
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOS-GATED DEVICE WITH HIGH DOPANT CONCENTRATION N-WE...
- Publication number 20180261666
- Publication date Sep 13, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...
- Publication number 20170330962
- Publication date Nov 16, 2017
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...
- Publication number 20160359029
- Publication date Dec 8, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...
- Publication number 20160027880
- Publication date Jan 28, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOSFET INCLUDING PLANAR CHANNEL AND VERTICAL FIELD
- Publication number 20150221765
- Publication date Aug 6, 2015
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...
- Publication number 20150221731
- Publication date Aug 6, 2015
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination With Improved Breakdown Voltage
- Publication number 20120187473
- Publication date Jul 26, 2012
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET With Embedded Recessed Field Plate and Methods of Fabr...
- Publication number 20110254088
- Publication date Oct 20, 2011
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination with Improved Breakdown Voltage
- Publication number 20090206913
- Publication date Aug 20, 2009
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING TWO MASKS
- Publication number 20090085105
- Publication date Apr 2, 2009
- Shih Tzung Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING THREE MASKS
- Publication number 20090085099
- Publication date Apr 2, 2009
- Shih Tzung Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING FOUR MASKS
- Publication number 20090085074
- Publication date Apr 2, 2009
- Shih Tzung Su
- H01 - BASIC ELECTRIC ELEMENTS

Shih-Tzung Su

Person

Patents Grantslast 30 patents

MOSFET with distributed doped P-shield zones under trenches

Split gate power device and its method of fabrication

Vertical power MOS-gated device with high dopant concentration N-we...

Power MOSFET having lateral channel, vertical current path, and P-r...

Power MOSFET having planar channel, vertical current path, and top...

Vertical power MOSFET having planar channel and its method of fabri...

Vertical power MOSFET having planar channel and its method of fabri...

Vertical power MOSFET with planar channel and vertical field plate

Power MOSFET with embedded recessed field plate and methods of fabr...

Edge termination with improved breakdown voltage

Edge termination with improved breakdown voltage

Trench MOSFET and method of manufacture utilizing two masks

Trench MOSFET and method of manufacture utilizing four masks

Patents Applicationslast 30 patents

MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...

MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES

SPLIT GATE POWER DEVICE AND ITS METHOD OF FABRICATION

VERTICAL POWER MOS-GATED DEVICE WITH HIGH DOPANT CONCENTRATION N-WE...

POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...

POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...

VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...

VERTICAL POWER MOSFET INCLUDING PLANAR CHANNEL AND VERTICAL FIELD

VERTICAL POWER MOSFET HAVING PLANAR CHANNEL AND ITS METHOD OF FABRI...

Edge Termination With Improved Breakdown Voltage

Power MOSFET With Embedded Recessed Field Plate and Methods of Fabr...

Edge Termination with Improved Breakdown Voltage

TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING TWO MASKS

TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING THREE MASKS

TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING FOUR MASKS