Shikayuki Ochi

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Akishima, JP

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Patents Grantslast 30 patents

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Insulated gate type field effect semiconductor device and a circuit...
- Patent number 4,599,576
- Issue date Jul 8, 1986
- Hitachi, Ltd.
- Isao Yoshida
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High-breakdown-voltage semiconductor device
- Patent number 4,443,812
- Issue date Apr 17, 1984
- Hitachi, Ltd.
- Ichiro Imaizumi
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High-breakdown-voltage resistance element for integrated circuit wi...
- Patent number 4,423,433
- Issue date Dec 27, 1983
- Hitachi, Ltd.
- Ichiro Imaizumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage circuit for insulated gate field-effect transistor
- Patent number 4,317,055
- Issue date Feb 23, 1982
- Hitachi, Ltd.
- Isao Yoshida
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Insulated-gate semiconductor device
- Patent number 4,213,140
- Issue date Jul 15, 1980
- Hitachi, Ltd.
- Takeaki Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor with source field shield ext...
- Patent number 4,172,260
- Issue date Oct 23, 1979
- Hitachi, Ltd.
- Takeaki Okabe
- H01 - BASIC ELECTRIC ELEMENTS