Shin Harada

Person

Osaka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate and method of manufacturing the same
- Patent number 11,242,618
- Issue date Feb 8, 2022
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus, method for manufacturing silicon carbide...
- Patent number 11,066,756
- Issue date Jul 20, 2021
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 10,741,683
- Issue date Aug 11, 2020
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device of manufacturing silicon carbide single crystal
- Patent number 10,724,151
- Issue date Jul 28, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,513,799
- Issue date Dec 24, 2019
- Sumitomo Electric Industries, Ltd.
- Sho Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus, method for manufacturing silicon carbide...
- Patent number 10,494,735
- Issue date Dec 3, 2019
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide substrate
- Patent number 10,361,273
- Issue date Jul 23, 2019
- Sumitomo Electric Industries, Ltd.
- Naoki Kaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 10,319,821
- Issue date Jun 11, 2019
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,246,797
- Issue date Apr 2, 2019
- Sumitomo Electric Industries, Ltd.
- Sho Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,202,709
- Issue date Feb 12, 2019
- Sumitomo Electric Industries, Ltd.
- Sho Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 9,947,782
- Issue date Apr 17, 2018
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide single crystal
- Patent number 9,856,583
- Issue date Jan 2, 2018
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide single crystal
- Patent number 9,845,549
- Issue date Dec 19, 2017
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,583,571
- Issue date Feb 28, 2017
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,450,054
- Issue date Sep 20, 2016
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of manufacturing the same
- Patent number 9,255,344
- Issue date Feb 9, 2016
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,184,239
- Issue date Nov 10, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing single crystal
- Patent number 9,090,992
- Issue date Jul 28, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal, and silico...
- Patent number 9,082,621
- Issue date Jul 14, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide substrate and method for m...
- Patent number 8,969,103
- Issue date Mar 3, 2015
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Dislocations in SiC semiconductor substrate
- Patent number 8,912,550
- Issue date Dec 16, 2014
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing th...
- Patent number 8,872,188
- Issue date Oct 28, 2014
- Sumitomo Electric Industries, Ltd
- Misako Honaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 8,803,294
- Issue date Aug 12, 2014
- Sumitomo Electric Industries, Ltd
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, epitaxial wafer and manufacturing method...
- Patent number 8,709,950
- Issue date Apr 29, 2014
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device and semiconductor device
- Patent number 8,697,555
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd
- Kazuhiro Fujikawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 8,686,434
- Issue date Apr 1, 2014
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,643,065
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device
- Patent number 8,629,457
- Issue date Jan 14, 2014
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, semiconductor device, method of manufact...
- Patent number 8,624,266
- Issue date Jan 7, 2014
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- G01 - MEASURING TESTING
Information Patent Grant
MOSFET and method for manufacturing MOSFET
- Patent number 8,536,583
- Issue date Sep 17, 2013
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SiC CRYSTAL SUBSTRAT...
- Publication number 20240387640
- Publication date Nov 21, 2024
- Sumitomo Electric Industries, Ltd.
- Issei SATOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20200063286
- Publication date Feb 27, 2020
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20190127880
- Publication date May 2, 2019
- Sumitomo Electric Industries, Ltd.
- Sho SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20180254323
- Publication date Sep 6, 2018
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20180254324
- Publication date Sep 6, 2018
- SUMITOMO ELECTRIC INDUSTRIES.,LTD.
- Naoki KAJI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20180204942
- Publication date Jul 19, 2018
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20170335487
- Publication date Nov 23, 2017
- Sumitomo Electric Industries, Ltd.
- Sho SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20170335486
- Publication date Nov 23, 2017
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20170314161
- Publication date Nov 2, 2017
- Sumitomo Electric Industries, Ltd.
- Sho SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20170117381
- Publication date Apr 27, 2017
- Sumitomo Electric Industries, Ltd.
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160138187
- Publication date May 19, 2016
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160138185
- Publication date May 19, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160122903
- Publication date May 5, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160122902
- Publication date May 5, 2016
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160108553
- Publication date Apr 21, 2016
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE
- Publication number 20160027879
- Publication date Jan 28, 2016
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20150060886
- Publication date Mar 5, 2015
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20140159056
- Publication date Jun 12, 2014
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20140159057
- Publication date Jun 12, 2014
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20140138709
- Publication date May 22, 2014
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20130255568
- Publication date Oct 3, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL
- Publication number 20130239881
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
- Publication number 20130224941
- Publication date Aug 29, 2013
- Sumitomo Electric Industries, Ltd.
- Misako Honaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20130161646
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT, SUBSTRATE, AND SUBSTRATE GROUP
- Publication number 20130161647
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20130137198
- Publication date May 30, 2013
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...
- Publication number 20130119406
- Publication date May 16, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroshi NOTSU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD FOR M...
- Publication number 20130109110
- Publication date May 2, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF...
- Publication number 20130095294
- Publication date Apr 18, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130071643
- Publication date Mar 21, 2013
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH

Shin Harada

Person

Patents Grantslast 30 patents

Silicon carbide substrate and method of manufacturing the same

Crystal growth apparatus, method for manufacturing silicon carbide...

Semiconductor device and method for manufacturing same

Device of manufacturing silicon carbide single crystal

Method for manufacturing silicon carbide single crystal

Crystal growth apparatus, method for manufacturing silicon carbide...

Silicon carbide substrate

Silicon carbide substrate

Method for manufacturing silicon carbide single crystal

Method for manufacturing silicon carbide single crystal

Semiconductor device and method for manufacturing same

Method of manufacturing silicon carbide single crystal

Method of manufacturing silicon carbide single crystal

Dislocation in SiC semiconductor substrate

Dislocation in SiC semiconductor substrate

Silicon carbide substrate and method of manufacturing the same

Dislocation in SiC semiconductor substrate

Method of manufacturing single crystal

Method for manufacturing silicon carbide single crystal, and silico...

Method for manufacturing silicon carbide substrate and method for m...

Dislocations in SiC semiconductor substrate

Silicon carbide semiconductor device and method of manufacturing th...

Semiconductor device and method for manufacturing same

Silicon carbide substrate, epitaxial wafer and manufacturing method...

Method of producing semiconductor device and semiconductor device

Silicon carbide semiconductor device and method for manufacturing t...

Semiconductor device and method for manufacturing the same

Light-emitting device

Silicon carbide substrate, semiconductor device, method of manufact...

MOSFET and method for manufacturing MOSFET

Patents Applicationslast 30 patents

SiC CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SiC CRYSTAL SUBSTRAT...

CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

DEVICE OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR SUBSTRATE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...

SEMICONDUCTOR SUBSTRATE

INGOT, SUBSTRATE, AND SUBSTRATE GROUP

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD FOR M...

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME