Shin Hashimoto

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming epitaxial wafer and method for fabricating semic...
- Patent number 8,679,955
- Issue date Mar 25, 2014
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride semiconductor electronic device, and method of fabricat...
- Patent number 8,653,561
- Issue date Feb 18, 2014
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor wafer and group III nitride semicon...
- Patent number 8,633,514
- Issue date Jan 21, 2014
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, method for manufacturing gallium nitride semicondu...
- Patent number 8,592,289
- Issue date Nov 26, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
III nitride electronic device and III nitride semiconductor epitaxi...
- Patent number 8,541,816
- Issue date Sep 24, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating wafer product and method for fabricating gal...
- Patent number 8,415,180
- Issue date Apr 9, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film deposition method
- Patent number 8,404,571
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride semiconductor wafer and group III nitride semicon...
- Patent number 8,148,751
- Issue date Apr 3, 2012
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlxGayIn1−x−yN crystal substrate, semiconductor device, and method...
- Patent number 7,943,964
- Issue date May 17, 2011
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
High electron mobility transistor, field-effect transistor, and epi...
- Patent number 7,884,393
- Issue date Feb 8, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride semiconductor device and epitaxial substrate
- Patent number 7,872,285
- Issue date Jan 18, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III Nitride Transistor
- Patent number 7,749,828
- Issue date Jul 6, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRIC...
- Publication number 20140054680
- Publication date Feb 27, 2014
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRI...
- Publication number 20120211801
- Publication date Aug 23, 2012
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...
- Publication number 20120161205
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GAL...
- Publication number 20120070929
- Publication date Mar 22, 2012
- Koha Co., Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM DEPOSITION APPARATUS
- Publication number 20120006263
- Publication date Jan 12, 2012
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMIC...
- Publication number 20120003770
- Publication date Jan 5, 2012
- Koha Co., Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDU...
- Publication number 20110315998
- Publication date Dec 29, 2011
- Koha Co., Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND METHOD OF FABRICAT...
- Publication number 20110278647
- Publication date Nov 17, 2011
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM DEPOSITION METHOD
- Publication number 20110097880
- Publication date Apr 28, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...
- Publication number 20110049573
- Publication date Mar 3, 2011
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III NITRIDE ELECTRONIC DEVICE AND III NITRIDE SEMICONDUCTOR EPITAXI...
- Publication number 20100230687
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, and Epi...
- Publication number 20100230723
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20090194796
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHO...
- Publication number 20090194847
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...
- Publication number 20090189190
- Publication date Jul 30, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS

Shin Hashimoto

Person

Patents Grantslast 30 patents

Method for forming epitaxial wafer and method for fabricating semic...

III-nitride semiconductor electronic device, and method of fabricat...

Group III nitride semiconductor wafer and group III nitride semicon...

Epitaxial wafer, method for manufacturing gallium nitride semicondu...

III nitride electronic device and III nitride semiconductor epitaxi...

Method for fabricating wafer product and method for fabricating gal...

Film deposition method

Group III nitride semiconductor wafer and group III nitride semicon...

AlxGayIn1−x−yN crystal substrate, semiconductor device, and method...

High electron mobility transistor, field-effect transistor, and epi...

Vertical gallium nitride semiconductor device and epitaxial substrate

Method of manufacturing group III Nitride Transistor

Patents Applicationslast 30 patents

METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRIC...

GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRI...

GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...

METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GAL...

FILM DEPOSITION APPARATUS

METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMIC...

EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDU...

III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND METHOD OF FABRICAT...

FILM DEPOSITION METHOD

GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...

III NITRIDE ELECTRONIC DEVICE AND III NITRIDE SEMICONDUCTOR EPITAXI...

High Electron Mobility Transistor, Field-Effect Transistor, and Epi...

Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate

A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHO...

High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...