Shin-ichi Taka

Person

Yokosuka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing self-aligned bipolar transistors using dou...
- Patent number 5,488,002
- Issue date Jan 30, 1996
- Kabushiki Kaisha Toshiba
- Koji Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a hetero bipolar transistor
- Patent number 5,399,511
- Issue date Mar 21, 1995
- Kabushiki Kaisha Toshiba
- Shin-ichi Taka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero bipolar transistor and method of manufacturing the same
- Patent number 5,365,090
- Issue date Nov 15, 1994
- Kabushiki Kaisha Toshiba
- Shin-ichi Taka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor integrated circuit device
- Patent number 5,356,821
- Issue date Oct 18, 1994
- Kabushiki Kaisha Toshiba
- Hiroshi Naruse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor operated at high speed
- Patent number 5,244,533
- Issue date Sep 14, 1993
- Kabushiki Kaisha Toshiba
- Koji Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,204,276
- Issue date Apr 20, 1993
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 5,148,252
- Issue date Sep 15, 1992
- Kabushiki Kaisha Toshiba
- Shin-ichi Taka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a silicide layer
- Patent number 5,102,826
- Issue date Apr 7, 1992
- Kabushiki Kaisha Toshiba
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing super self-alignment technology bipolar tra...
- Patent number 4,975,381
- Issue date Dec 4, 1990
- Kabushiki Kaisha Toshiba
- Shin-ichi Taka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 4,910,170
- Issue date Mar 20, 1990
- Kabushiki Kaisha Toshiba
- Toshiyo Motozima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor with self-aligned extern...
- Patent number 4,871,685
- Issue date Oct 3, 1989
- Kabushiki Kaisha Toshiba
- Shin-ichi Taka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor integrated circuit device hav...
- Patent number 4,853,342
- Issue date Aug 1, 1989
- Kabushiki Kaisha Toshiba
- Shin-ichi Taka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gettering a semiconductor device and forming an isolation...
- Patent number 4,766,086
- Issue date Aug 23, 1988
- Kabushiki Kaisha Toshiba
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with conductive tren...
- Patent number 4,717,682
- Issue date Jan 5, 1988
- Kabushiki Kaisha Toshiba
- Shin-ichi Taka
- H01 - BASIC ELECTRIC ELEMENTS

Shin-ichi Taka

Person

Patents Grantslast 30 patents

Method for manufacturing self-aligned bipolar transistors using dou...

Method of manufacturing a hetero bipolar transistor

Hetero bipolar transistor and method of manufacturing the same

Method for manufacturing semiconductor integrated circuit device

Method of manufacturing bipolar transistor operated at high speed

Method of manufacturing semiconductor device

Bipolar transistor

Method of manufacturing a semiconductor device having a silicide layer

Method of manufacturing super self-alignment technology bipolar tra...

Method of manufacturing semiconductor device

Method of manufacturing bipolar transistor with self-aligned extern...

Method of manufacturing semiconductor integrated circuit device hav...

Method of gettering a semiconductor device and forming an isolation...

Method of manufacturing a semiconductor device with conductive tren...