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Shingo Hashimoto
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Tokyo, JP
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last 30 patents
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Patent Grant
MOS transistor with double drain structure for suppressing short ch...
Patent number
6,597,038
Issue date
Jul 22, 2003
NEC Corporation
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making loadless four-transistor memory cell with differen...
Patent number
6,514,823
Issue date
Feb 4, 2003
NEC Corporation
Shingo Hashimoto
G11 - INFORMATION STORAGE
Information
Patent Grant
Load-less four-transistor memory cell with different gate insulatio...
Patent number
6,442,062
Issue date
Aug 27, 2002
NEC Corporation
Shingo Hashimoto
G11 - INFORMATION STORAGE
Information
Patent Grant
Semiconductor device with impurity layer as channel stopper immedia...
Patent number
5,994,190
Issue date
Nov 30, 1999
NEC Corporation
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Static RAM having a stable high-resistance load
Patent number
5,949,113
Issue date
Sep 7, 1999
NEC Corporation
Noriyuki Ota
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making semiconductor device using oblique ion implantation
Patent number
5,933,716
Issue date
Aug 3, 1999
NEC Corporation
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Semiconductor device and blowout method of fuse
Publication number
20050116315
Publication date
Jun 2, 2005
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device and blowout method of fuse
Publication number
20040159906
Publication date
Aug 19, 2004
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF MAKING LOADLESS FOUR-TRANSISTOR MRMORY CELL WITH DIFFEREN...
Publication number
20020185663
Publication date
Dec 12, 2002
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device and blowout method of fuse
Publication number
20020175416
Publication date
Nov 28, 2002
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Load-less four-transistor memory cell
Publication number
20020001221
Publication date
Jan 3, 2002
Shingo Hashimoto
H01 - BASIC ELECTRIC ELEMENTS