Shinichi Hodama

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 7,663,186
- Issue date Feb 16, 2010
- Kabushiki Kaisha Toshiba
- Syotaro Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET semiconductor device and method of manufacturing the same
- Patent number 7,226,841
- Issue date Jun 5, 2007
- Kabushiki Kaisha Toshiba
- Masaru Izumisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET device
- Patent number 7,061,048
- Issue date Jun 13, 2006
- Kabushiki Kaisha Toshiba
- Yusuke Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset-gate-type semiconductor device
- Patent number 7,061,060
- Issue date Jun 13, 2006
- Kabushiki Kaisha Toshiba
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset-gate-type semiconductor device
- Patent number 7,026,214
- Issue date Apr 11, 2006
- Kabushiki Kaisha Toshiba
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET semiconductor device and method of manufacturing the same
- Patent number 6,878,989
- Issue date Apr 12, 2005
- Kabushiki Kaisha Toshiba
- Masaru Izumisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET device
- Patent number 6,720,618
- Issue date Apr 13, 2004
- Kabushiki Kaisha Toshiba
- Yusuke Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset-gate-type semiconductor device
- Patent number 6,552,389
- Issue date Apr 22, 2003
- Kabushiki Kaisha Toshiba
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080251838
- Publication date Oct 16, 2008
- Kabushiki Kaisha Toshiba
- Syotaro Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET semiconductor device and method of manufacturing the same
- Publication number 20050170587
- Publication date Aug 4, 2005
- Masaru Izumisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Offset-gate-type semiconductor device
- Publication number 20050056890
- Publication date Mar 17, 2005
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power mosfet device
- Publication number 20040164350
- Publication date Aug 26, 2004
- Yusuke Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030227052
- Publication date Dec 11, 2003
- Kabushiki Kaisha Toshiba
- Syotaro Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Offset-gate-type semiconductor device
- Publication number 20030173620
- Publication date Sep 18, 2003
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET device
- Publication number 20030089947
- Publication date May 15, 2003
- Yusuke Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power mosfet semiconductor device and method of manufacturing the same
- Publication number 20020175368
- Publication date Nov 28, 2002
- Masaru Izumisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Offset-gate-type semiconductor device
- Publication number 20020100951
- Publication date Aug 1, 2002
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS

Shinichi Hodama

Person

Patents Grantslast 30 patents

Semiconductor device

Power MOSFET semiconductor device and method of manufacturing the same

Power MOSFET device

Offset-gate-type semiconductor device

Offset-gate-type semiconductor device

Power MOSFET semiconductor device and method of manufacturing the same

Power MOSFET device

Offset-gate-type semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

Power MOSFET semiconductor device and method of manufacturing the same

Offset-gate-type semiconductor device

Power mosfet device

Semiconductor device

Offset-gate-type semiconductor device

Power MOSFET device

Power mosfet semiconductor device and method of manufacturing the same

Offset-gate-type semiconductor device