Shinichi Miyatake

Person

Sagamihara, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Memory subword driver circuits with common transistors at word lines
- Patent number 11,942,142
- Issue date Mar 26, 2024
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Grant
Subword drivers with reduced numbers of transistors and circuit lay...
- Patent number 11,488,655
- Issue date Nov 1, 2022
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for controlling word line discharge
- Patent number 11,176,977
- Issue date Nov 16, 2021
- Micron Technology, Inc.
- Toshiyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for compensation of sense amplifiers
- Patent number 11,069,384
- Issue date Jul 20, 2021
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for controlling word line discharge
- Patent number 10,937,476
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Toshiyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods for controlling word line discharge
- Patent number 10,854,272
- Issue date Dec 1, 2020
- Micron Technology, Inc.
- Toshiyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Reversed bias compensation for sense amplifier operation
- Patent number 10,714,153
- Issue date Jul 14, 2020
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-step data-line precharge scheme
- Patent number 10,714,158
- Issue date Jul 14, 2020
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Grant
Reversed bias compensation for sense amplifier operation
- Patent number 10,482,931
- Issue date Nov 19, 2019
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-step data-line precharge scheme
- Patent number 10,236,040
- Issue date Mar 19, 2019
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Grant
DRAM-based anti-fuse cells
- Patent number 9,330,794
- Issue date May 3, 2016
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ACTIVE MATERIALS FOR REDUCING HOT ELECTRON-INDUCED PUNCH-THROUGH AN...
- Publication number 20240312504
- Publication date Sep 19, 2024
- Micron Technology, Inc.
- Guy S. Perry
- G11 - INFORMATION STORAGE
Information Patent Application
Sense Amplifier Circuitry and Threshold Voltage Compensation
- Publication number 20240290376
- Publication date Aug 29, 2024
- Micron Technology, Inc.
- Wenlun Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SUBWORD DRIVER CIRCUITS WITH COMMON TRANSISTORS AT WORD LINES
- Publication number 20230005519
- Publication date Jan 5, 2023
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Application
SUBWORD DRIVERS WITH REDUCED NUMBERS OF TRANSISTORS AND CIRCUIT LAY...
- Publication number 20220068350
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND METHODS FOR CONTROLLING WORD LINE DISCHARGE
- Publication number 20210183422
- Publication date Jun 17, 2021
- Micron Technology, Inc.
- Toshiyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND METHODS FOR CONTROLLING WORD LINE DISCHARGE
- Publication number 20200402565
- Publication date Dec 24, 2020
- Micron Technology, Inc.
- Toshiyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND METHODS FOR CONTROLLING WORD LINE DISCHARGE
- Publication number 20200402557
- Publication date Dec 24, 2020
- Micron Technology, Inc.
- Toshiyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND METHODS FOR COMPENSATION OF SENSE AMPLIFIERS
- Publication number 20200312384
- Publication date Oct 1, 2020
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Application
REVERSED BIAS COMPENSATION FOR SENSE AMPLIFIER OPERATION
- Publication number 20200098402
- Publication date Mar 26, 2020
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-STEP DATA-LINE PRECHARGE SCHEME
- Publication number 20190172508
- Publication date Jun 6, 2019
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-STEP DATA-LINE PRECHARGE SCHEME
- Publication number 20180137899
- Publication date May 17, 2018
- Micron Technology, Inc.
- Shinichi Miyatake
- G11 - INFORMATION STORAGE

Shinichi Miyatake

Person

Patents Grantslast 30 patents

Memory subword driver circuits with common transistors at word lines

Subword drivers with reduced numbers of transistors and circuit lay...

Apparatuses and methods for controlling word line discharge

Apparatuses and methods for compensation of sense amplifiers

Apparatuses and methods for controlling word line discharge

Apparatuses and methods for controlling word line discharge

Reversed bias compensation for sense amplifier operation

Two-step data-line precharge scheme

Reversed bias compensation for sense amplifier operation

Two-step data-line precharge scheme

DRAM-based anti-fuse cells

Patents Applicationslast 30 patents

ACTIVE MATERIALS FOR REDUCING HOT ELECTRON-INDUCED PUNCH-THROUGH AN...

Sense Amplifier Circuitry and Threshold Voltage Compensation

MEMORY SUBWORD DRIVER CIRCUITS WITH COMMON TRANSISTORS AT WORD LINES

SUBWORD DRIVERS WITH REDUCED NUMBERS OF TRANSISTORS AND CIRCUIT LAY...

APPARATUSES AND METHODS FOR CONTROLLING WORD LINE DISCHARGE

APPARATUSES AND METHODS FOR CONTROLLING WORD LINE DISCHARGE

APPARATUSES AND METHODS FOR CONTROLLING WORD LINE DISCHARGE

APPARATUSES AND METHODS FOR COMPENSATION OF SENSE AMPLIFIERS

REVERSED BIAS COMPENSATION FOR SENSE AMPLIFIER OPERATION

TWO-STEP DATA-LINE PRECHARGE SCHEME

TWO-STEP DATA-LINE PRECHARGE SCHEME