Shinichiro KAWABATA

Person

Ushiku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,591,715
- Issue date Feb 28, 2023
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,001,940
- Issue date May 11, 2021
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,903,072
- Issue date Jan 26, 2021
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,796,904
- Issue date Oct 6, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and C-plane GaN substrate
- Patent number 10,720,326
- Issue date Jul 21, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 10,301,743
- Issue date May 28, 2019
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 9,518,337
- Issue date Dec 13, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 9,096,945
- Issue date Aug 4, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20210230770
- Publication date Jul 29, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20210090886
- Publication date Mar 25, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GAN SUBSTRATE
- Publication number 20200350163
- Publication date Nov 5, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20200303187
- Publication date Sep 24, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20190189438
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20190189439
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20190127881
- Publication date May 2, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20170327971
- Publication date Nov 16, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20170051434
- Publication date Feb 23, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20150247256
- Publication date Sep 3, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20130108537
- Publication date May 2, 2013
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INC...
- Publication number 20100104495
- Publication date Apr 29, 2010
- MITSUBISHI CHEMICAL CORPORATION
- Shinichiro Kawabata
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL PRODUCTION PROCESS USING SUPERCRITICAL SOLVENT, CRYSTAL GRO...
- Publication number 20090092536
- Publication date Apr 9, 2009
- TOHOKU UNIVERSITY
- Shinichiro Kawabata
- C30 - CRYSTAL GROWTH

Shinichiro KAWABATA

Person

Patents Grantslast 30 patents

Conductive C-plane GaN substrate

GaN single crystal and method for manufacturing GaN single crystal

Method for growing GaN crystal and c-plane GaN substrate

GaN single crystal and method for manufacturing GaN single crystal

Conductive C-plane GaN substrate

Conductive C-plane GaN substrate

Method for growing GaN crystal and C-plane GaN substrate

GaN single crystal and method for manufacturing GaN single crystal

Method for producing nitride crystal and nitride crystal

Method for producing nitride crystal and nitride crystal

Patents Applicationslast 30 patents

CONDUCTIVE C-PLANE GaN SUBSTRATE

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

CONDUCTIVE C-PLANE GaN SUBSTRATE

CONDUCTIVE C-PLANE GAN SUBSTRATE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INC...

CRYSTAL PRODUCTION PROCESS USING SUPERCRITICAL SOLVENT, CRYSTAL GRO...