Shinichirou Taniguchi

Person

Kagoshima, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing semiconductor device having increased adhesion...
- Patent number 6,383,842
- Issue date May 7, 2002
- Fujitsu Limited
- Akira Takashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of producing the same and semicondu...
- Patent number 6,379,997
- Issue date Apr 30, 2002
- Fujitsu Limited
- Toshimi Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of producing the same and semicondu...
- Patent number 6,111,306
- Issue date Aug 29, 2000
- Fujitsu Limited
- Toshimi Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device having stacked wiring and i...
- Patent number 6,034,428
- Issue date Mar 7, 2000
- Fujitsu Limited
- Toshimi Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in which semiconductor chip has bottom surface...
- Patent number 5,821,613
- Issue date Oct 13, 1998
- Fujitsu Limited
- Akira Takashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of producing the same
- Patent number 5,804,467
- Issue date Sep 8, 1998
- Fujistsu Limited
- Toshimi Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having resin gate hole through substrate for r...
- Patent number 5,679,978
- Issue date Oct 21, 1997
- Fujitsu Limited
- Toshimi Kawahara
- H01 - BASIC ELECTRIC ELEMENTS

Shinichirou Taniguchi

Person

Patents Grantslast 30 patents

Method for producing semiconductor device having increased adhesion...

Semiconductor device and method of producing the same and semicondu...

Semiconductor device and method of producing the same and semicondu...

Semiconductor integrated circuit device having stacked wiring and i...

Semiconductor device in which semiconductor chip has bottom surface...

Semiconductor device and method of producing the same

Semiconductor device having resin gate hole through substrate for r...