Shinobu Takehiro

Person

Miyagi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having double diffused MOS transistors with va...
- Patent number 8,207,579
- Issue date Jun 26, 2012
- Lapis Semiconductor Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method with etch stop film bel...
- Patent number 7,176,071
- Issue date Feb 13, 2007
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LSI device having core and interface regions with SOI layers of dif...
- Patent number 7,087,967
- Issue date Aug 8, 2006
- Oki Electric Industry Co., Ltd.
- Toru Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a MOS transistor
- Patent number 6,936,503
- Issue date Aug 30, 2005
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method with etch stop film bel...
- Patent number 6,838,733
- Issue date Jan 4, 2005
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 6,794,240
- Issue date Sep 21, 2004
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 6,514,813
- Issue date Feb 4, 2003
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating storage capacitor using high dielectric cons...
- Patent number 6,403,441
- Issue date Jun 11, 2002
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device by sputtering dielectr...
- Patent number 6,391,797
- Issue date May 21, 2002
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a MOS transistor having multi-layered gate...
- Patent number 6,284,580
- Issue date Sep 4, 2001
- Oki Electric Industry Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating method for semiconductor device
- Patent number 6,284,587
- Issue date Sep 4, 2001
- Oki Electric Industry Co., Ltd.
- Satoshi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating method for semiconductor device
- Patent number 5,940,677
- Issue date Aug 17, 1999
- Oki Electric Industry Co., Ltd.
- Satoshi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20100181616
- Publication date Jul 22, 2010
- Oki Semiconductor Co., Ltd.
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method with etch stop film bel...
- Publication number 20050082614
- Publication date Apr 21, 2005
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method with etch stop film bel...
- Publication number 20040075139
- Publication date Apr 22, 2004
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LSI device and manufacturing method of the above
- Publication number 20040070032
- Publication date Apr 15, 2004
- Toru Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a MOS transistor
- Publication number 20030235965
- Publication date Dec 25, 2003
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a semiconductor device
- Publication number 20030129797
- Publication date Jul 10, 2003
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a semiconductor device
- Publication number 20020115251
- Publication date Aug 22, 2002
- Shinobu Takehiro
- H01 - BASIC ELECTRIC ELEMENTS

Shinobu Takehiro

Person

Patents Grantslast 30 patents

Semiconductor device having double diffused MOS transistors with va...

Semiconductor device and fabrication method with etch stop film bel...

LSI device having core and interface regions with SOI layers of dif...

Method for manufacturing a MOS transistor

Semiconductor device and fabrication method with etch stop film bel...

Method of fabricating a semiconductor device

Method of fabricating a semiconductor device

Method for fabricating storage capacitor using high dielectric cons...

Method of manufacturing semiconductor device by sputtering dielectr...

Method for manufacturing a MOS transistor having multi-layered gate...

Fabricating method for semiconductor device

Fabricating method for semiconductor device

Patents Applicationslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device and fabrication method with etch stop film bel...

Semiconductor device and fabrication method with etch stop film bel...

LSI device and manufacturing method of the above

Method for manufacturing a MOS transistor

Method of fabricating a semiconductor device

Method of fabricating a semiconductor device