Shinto ICHIKAWA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Tunnel barrier layer, magnetoresistance effect element, and method...
- Patent number 12,063,873
- Issue date Aug 13, 2024
- TDK Corporation
- Shinto Ichikawa
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,035,635
- Issue date Jul 9, 2024
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element containing Heusler alloy with addi...
- Patent number 11,967,348
- Issue date Apr 23, 2024
- TDK Corporation
- Katsuyuki Nakada
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,944,018
- Issue date Mar 26, 2024
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,927,649
- Issue date Mar 12, 2024
- TDK Corporation
- Shogo Yonemura
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistive effect element including a Heusler alloy layer wit...
- Patent number 11,730,063
- Issue date Aug 15, 2023
- TDK Corporation
- Kazuumi Inubushi
Information Patent Grant
Magnetoresistive effect element
- Patent number 11,728,082
- Issue date Aug 15, 2023
- TDK Corporation
- Tsuyoshi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and method for manufacturing the same
- Patent number 11,696,513
- Issue date Jul 4, 2023
- TDK Corporation
- Katsuyuki Nakada
Information Patent Grant
Magnetoresistance effect element including a crystallized co heusle...
- Patent number 11,621,392
- Issue date Apr 4, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel barrier layer, magnetoresistance effect element, method for...
- Patent number 11,594,674
- Issue date Feb 28, 2023
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element including at least one Heusler all...
- Patent number 11,525,873
- Issue date Dec 13, 2022
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,362,270
- Issue date Jun 14, 2022
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element including a crystallized Heusler a...
- Patent number 11,158,785
- Issue date Oct 26, 2021
- TDK Corporation
- Shinto Ichikawa
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,069,852
- Issue date Jul 20, 2021
- TDK Corporation
- Shinto Ichikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element
- Patent number 11,005,035
- Issue date May 11, 2021
- TDK Corporation
- Tsuyoshi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and method for manufacturing the same
- Patent number 10,944,043
- Issue date Mar 9, 2021
- TDK Corporation
- Katsuyuki Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 10,825,985
- Issue date Nov 3, 2020
- TDK Corporation
- Shinto Ichikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element and method for manufacturing the same
- Patent number 10,665,776
- Issue date May 26, 2020
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20240334839
- Publication date Oct 3, 2024
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...
- Publication number 20240112695
- Publication date Apr 4, 2024
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20240099152
- Publication date Mar 21, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20230337549
- Publication date Oct 19, 2023
- TDK Corporation
- Kazuumi INUBUSHI
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230292625
- Publication date Sep 14, 2023
- TDK Corporation
- Katsuyuki NAKADA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230210016
- Publication date Jun 29, 2023
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20230157183
- Publication date May 18, 2023
- TDK Corporation
- Shinto ICHIKAWA
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230144429
- Publication date May 11, 2023
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230025589
- Publication date Jan 26, 2023
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20220278271
- Publication date Sep 1, 2022
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20220278272
- Publication date Sep 1, 2022
- TDK Corporation
- Shinto ICHIKAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20220006007
- Publication date Jan 6, 2022
- TDK Corporation
- Shinto ICHIKAWA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210318394
- Publication date Oct 14, 2021
- TDK Corporation
- Shogo Yonemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20210304940
- Publication date Sep 30, 2021
- TDK Corporation
- Tsuyoshi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210286028
- Publication date Sep 16, 2021
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND CRYSTALLIZATION METHOD OF FERRO...
- Publication number 20210265562
- Publication date Aug 26, 2021
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210193913
- Publication date Jun 24, 2021
- TDK Corporation
- Shinto ICHIKAWA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20210184103
- Publication date Jun 17, 2021
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210159396
- Publication date May 27, 2021
- TDK Corporation
- Katsuyuki NAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210028355
- Publication date Jan 28, 2021
- TDK Corporation
- Shinto ICHIKAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, METHOD FOR...
- Publication number 20200303630
- Publication date Sep 24, 2020
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive Effect Element
- Publication number 20200212295
- Publication date Jul 2, 2020
- TDK Corporation
- Tsuyoshi SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20200035913
- Publication date Jan 30, 2020
- TDK Corporation
- Shinto ICHIKAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20200006642
- Publication date Jan 2, 2020
- TDK Corporation
- Shinto ICHIKAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190259937
- Publication date Aug 22, 2019
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190019942
- Publication date Jan 17, 2019
- TDK Corporation
- Katsuyuki NAKADA
- H01 - BASIC ELECTRIC ELEMENTS

Shinto ICHIKAWA

Person

Patents Grantslast 30 patents

Tunnel barrier layer, magnetoresistance effect element, and method...

Magnetoresistance effect element

Magnetoresistance effect element containing Heusler alloy with addi...

Magnetoresistance effect element

Magnetoresistance effect element

Magnetoresistive effect element including a Heusler alloy layer wit...

Magnetoresistive effect element

Magnetoresistance effect element and method for manufacturing the same

Magnetoresistance effect element including a crystallized co heusle...

Tunnel barrier layer, magnetoresistance effect element, method for...

Magnetoresistance effect element including at least one Heusler all...

Magnetoresistance effect element

Magnetoresistance effect element including a crystallized Heusler a...

Magnetoresistance effect element

Magnetoresistive effect element

Magnetoresistance effect element and method for manufacturing the same

Magnetoresistance effect element

Magnetoresistance effect element and method for manufacturing the same

Patents Applicationslast 30 patents

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...

MAGNETO RESISTIVE ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT AND CRYSTALLIZATION METHOD OF FERRO...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

MAGNETORESISTANCE EFFECT ELEMENT

TUNNEL BARRIER LAYER, MAGNETORESISTANCE EFFECT ELEMENT, METHOD FOR...

Magnetoresistive Effect Element

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME