Shiro YAMAZAKI

Person

Kiyosu-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a group III nitride semiconductor by controlli...
- Patent number 11,280,024
- Issue date Mar 22, 2022
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Group III nitride semiconductor, seed substrat...
- Patent number 10,693,032
- Issue date Jun 23, 2020
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Group III nitride semiconductor including grow...
- Patent number 10,329,687
- Issue date Jun 25, 2019
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a group III nitride semiconductor single cryst...
- Patent number 9,567,693
- Issue date Feb 14, 2017
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor crystal removal apparatus and production method for s...
- Patent number 9,388,506
- Issue date Jul 12, 2016
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III nitride-based compound semiconductor...
- Patent number 9,263,258
- Issue date Feb 16, 2016
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride semiconductor
- Patent number 9,028,611
- Issue date May 12, 2015
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor single crystal, method for producin...
- Patent number 8,962,456
- Issue date Feb 24, 2015
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type group III nitride-based compound semiconductor and productio...
- Patent number 8,507,364
- Issue date Aug 13, 2013
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride-based compound semiconductor
- Patent number 8,361,222
- Issue date Jan 29, 2013
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing group III nitride semiconductor
- Patent number 8,349,079
- Issue date Jan 8, 2013
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group III nitride semiconductor manufacturing system
- Patent number 8,343,239
- Issue date Jan 1, 2013
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III nitride-based compound semiconductor...
- Patent number 8,227,324
- Issue date Jul 24, 2012
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a semiconductor crystal
- Patent number 8,216,365
- Issue date Jul 10, 2012
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing group III nitride based compound...
- Patent number 8,123,856
- Issue date Feb 28, 2012
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor substrate, electronic device, optical device, and pro...
- Patent number 8,084,281
- Issue date Dec 27, 2011
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,867,800
- Issue date Jan 11, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growing apparatus
- Patent number 7,708,833
- Issue date May 4, 2010
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing semiconductor crystal
- Patent number 7,459,023
- Issue date Dec 2, 2008
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,332,366
- Issue date Feb 19, 2008
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,138,286
- Issue date Nov 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing Group III nitride compound semiconductor
- Patent number 7,112,243
- Issue date Sep 26, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device using group III nitride group compound semico...
- Patent number 7,084,421
- Issue date Aug 1, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for semiconductor crystal and semiconductor lumin...
- Patent number 7,052,979
- Issue date May 30, 2006
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 7,001,790
- Issue date Feb 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,984,536
- Issue date Jan 10, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,830,992
- Issue date Dec 14, 2004
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a light-emitting semiconductor device
- Patent number 6,607,595
- Issue date Aug 19, 2003
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,593,599
- Issue date Jul 15, 2003
- Japan Science and Technology Corporation
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride group compound semiconductor
- Patent number 6,472,690
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299857
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299858
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Group III Nitride Semiconductor, Seed Substrat...
- Publication number 20180097142
- Publication date Apr 5, 2018
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20180066378
- Publication date Mar 8, 2018
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20170081780
- Publication date Mar 23, 2017
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20140239313
- Publication date Aug 28, 2014
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR PRODUCIN...
- Publication number 20140070370
- Publication date Mar 13, 2014
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR S...
- Publication number 20140000509
- Publication date Jan 2, 2014
- Shiro YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20130199438
- Publication date Aug 8, 2013
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20120217510
- Publication date Aug 30, 2012
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride semiconductor
- Publication number 20110155046
- Publication date Jun 30, 2011
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20110101412
- Publication date May 5, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Substrate, Electronic Device, Optical Device, and Pro...
- Publication number 20100301358
- Publication date Dec 2, 2010
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR...
- Publication number 20100093157
- Publication date Apr 15, 2010
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
N-type group III nitride-based compound semiconductor and productio...
- Publication number 20090294909
- Publication date Dec 3, 2009
- OSAKA UNIVERSITY
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing Group III nitride-based compound semiconductor...
- Publication number 20090197118
- Publication date Aug 6, 2009
- TOYODA GOSEI CO.,LTD.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Apparatus for Producing Group III Nitride Based Compound...
- Publication number 20090173273
- Publication date Jul 9, 2009
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for Producing Group III Nitride Based Compound Semiconductor
- Publication number 20090169444
- Publication date Jul 2, 2009
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Production Methods of Semiconductor Crystal and Semiconductor Subst...
- Publication number 20090155580
- Publication date Jun 18, 2009
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for producing group III element nitride semiconductor and...
- Publication number 20090126623
- Publication date May 21, 2009
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride semiconductor manufacturing system
- Publication number 20090106959
- Publication date Apr 30, 2009
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for manufacturing group III nitride semiconductor
- Publication number 20080299020
- Publication date Dec 4, 2008
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for manufacturing Group III nitride semiconductor and met...
- Publication number 20080295763
- Publication date Dec 4, 2008
- Toyoda Gosei Co., Ltd.
- Koji Hirata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III Nitride-based compound semiconductor
- Publication number 20080271665
- Publication date Nov 6, 2008
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing a semiconductor crystal
- Publication number 20080223286
- Publication date Sep 18, 2008
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growing apparatus
- Publication number 20080223288
- Publication date Sep 18, 2008
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20080173880
- Publication date Jul 24, 2008
- TOYODA GOSEI
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing semiconductor crystal
- Publication number 20070101931
- Publication date May 10, 2007
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting diode and process for producing the same
- Publication number 20060273324
- Publication date Dec 7, 2006
- Makoto Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20060118821
- Publication date Jun 8, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS

Shiro YAMAZAKI

Person

Patents Grantslast 30 patents

Method for producing a group III nitride semiconductor by controlli...

Method for producing Group III nitride semiconductor, seed substrat...

Method for producing Group III nitride semiconductor including grow...

Method for producing a group III nitride semiconductor single cryst...

Semiconductor crystal removal apparatus and production method for s...

Method for producing group III nitride-based compound semiconductor...

Method for producing group III nitride semiconductor

Group III nitride semiconductor single crystal, method for producin...

N-type group III nitride-based compound semiconductor and productio...

Method for producing group III nitride-based compound semiconductor

Apparatus for manufacturing group III nitride semiconductor

Group III nitride semiconductor manufacturing system

Method for producing group III nitride-based compound semiconductor...

Method for producing a semiconductor crystal

Method and apparatus for producing group III nitride based compound...

Semiconductor substrate, electronic device, optical device, and pro...

Light-emitting semiconductor device using group III nitrogen compound

Crystal growing apparatus

Method for producing semiconductor crystal

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Method for producing Group III nitride compound semiconductor

Light-emitting device using group III nitride group compound semico...

Production method for semiconductor crystal and semiconductor lumin...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Method for manufacturing a gallium nitride group compound semicondu...

Method for manufacturing a gallium nitride group compound semicondu...

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group com...

Gallium nitride group compound semiconductor

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

Method for Producing Group III Nitride Semiconductor, Seed Substrat...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR PRODUCIN...

SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR S...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

Method for producing group III nitride semiconductor

Light-emitting semiconductor device using group III nitrogen compound

Semiconductor Substrate, Electronic Device, Optical Device, and Pro...

METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR...

N-type group III nitride-based compound semiconductor and productio...

Method for producing Group III nitride-based compound semiconductor...

Method and Apparatus for Producing Group III Nitride Based Compound...

Apparatus for Producing Group III Nitride Based Compound Semiconductor

Production Methods of Semiconductor Crystal and Semiconductor Subst...

Apparatus for producing group III element nitride semiconductor and...

Group III nitride semiconductor manufacturing system

Apparatus for manufacturing group III nitride semiconductor

Apparatus for manufacturing Group III nitride semiconductor and met...

Method for producing group III Nitride-based compound semiconductor

Method for producing a semiconductor crystal

Crystal growing apparatus

Light-emitting semiconductor device using group III nitrogen compound

Method for producing semiconductor crystal

Light-emitting diode and process for producing the same

Light-emitting semiconductor device using group III nitrogen compound