Shiv Kumar MISHRA

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Diode structures
- Patent number 11,508,810
- Issue date Nov 22, 2022
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench isolation structures
- Patent number 11,239,315
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Shiv Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures
- Patent number 10,896,953
- Issue date Jan 19, 2021
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double barrier layer sets for contacts in semiconductor device
- Patent number 10,453,747
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Aditya Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device with silicon alloy region in silicon w...
- Patent number 10,236,367
- Issue date Mar 19, 2019
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance conductive contacts
- Patent number 10,084,093
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Shiv Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain profile engineering for enhanced p-MOSFET
- Patent number 9,419,082
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES Inc.
- Shiv Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FinFET) device with a planar block area to...
- Patent number 9,236,269
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Eric S. Kozarsky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL TRENCH ISOLATION STRUCTURES
- Publication number 20210242306
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Shiv Kumar MISHRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SOURCE/DRAIN REGIONS FOR TRANSISTOR DEVICES AND METHODS OF FO...
- Publication number 20210234045
- Publication date Jul 29, 2021
- GLOBALFOUNDRIES U.S, Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES
- Publication number 20210066450
- Publication date Mar 4, 2021
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES
- Publication number 20200328272
- Publication date Oct 15, 2020
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE BARRIER LAYER SETS FOR CONTACTS IN SEMICONDUCTOR DEVICE
- Publication number 20190067098
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES INC.
- Aditya Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SEMICONDUCTOR DEVICE WITH SILICON ALLOY REGION IN SILICON W...
- Publication number 20190013397
- Publication date Jan 10, 2019
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT SEMICONDUCTOR DEVICE WITH SILICON ALLOY REGION IN SILI...
- Publication number 20190013402
- Publication date Jan 10, 2019
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FORMATION USING AN ENERGY REMOVAL FILM
- Publication number 20180204929
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Shiv K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROFILE ENGINEERING FOR ENHANCED P-MOSFET
- Publication number 20150311293
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Shiv Kumar MISHRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH A PLANAR BLOCK AREA TO...
- Publication number 20150311085
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Eric S. Kozarsky
- H01 - BASIC ELECTRIC ELEMENTS

Shiv Kumar MISHRA

Person

Patents Grantslast 30 patents

Diode structures

Dual trench isolation structures

Diode structures

Double barrier layer sets for contacts in semiconductor device

Bipolar semiconductor device with silicon alloy region in silicon w...

Low resistance conductive contacts

Source/drain profile engineering for enhanced p-MOSFET

Field effect transistor (FinFET) device with a planar block area to...

Patents Applicationslast 30 patents

DUAL TRENCH ISOLATION STRUCTURES

NOVEL SOURCE/DRAIN REGIONS FOR TRANSISTOR DEVICES AND METHODS OF FO...

DIODE STRUCTURES

DIODE STRUCTURES

DOUBLE BARRIER LAYER SETS FOR CONTACTS IN SEMICONDUCTOR DEVICE

BIPOLAR SEMICONDUCTOR DEVICE WITH SILICON ALLOY REGION IN SILICON W...

FIELD EFFECT SEMICONDUCTOR DEVICE WITH SILICON ALLOY REGION IN SILI...

METAL GATE FORMATION USING AN ENERGY REMOVAL FILM

SOURCE/DRAIN PROFILE ENGINEERING FOR ENHANCED P-MOSFET

FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH A PLANAR BLOCK AREA TO...