Shizue Hori

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Power device having high breakdown voltage and method of manufactur...
- Patent number 6,084,263
- Issue date Jul 4, 2000
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same with stab...
- Patent number 6,031,276
- Issue date Feb 29, 2000
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with a reverse tapere...
- Patent number 5,926,725
- Issue date Jul 20, 1999
- Kabushiki Kaisha Toshiba
- Hidenori Saihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 5,864,180
- Issue date Jan 26, 1999
- Kabushiki Kaisha Toshiba
- Shizue Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,731,637
- Issue date Mar 24, 1998
- Kabushiki Kaisha Toshiba
- Shizue Hori
- H01 - BASIC ELECTRIC ELEMENTS