Shogo Mochizuki

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High aspect ratio contact structure with multiple metal stacks
- Patent number 12,268,026
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Junli Wang
Information Patent Grant
Source or drain template for reducing strain loss in spaced-apart n...
- Patent number 12,268,020
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Shogo Mochizuki
Information Patent Grant
Semiconductor device with strained channel
- Patent number 12,261,173
- Issue date Mar 25, 2025
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation between vertically stacked nanosheet devices
- Patent number 12,250,835
- Issue date Mar 11, 2025
- International Business Machines Corporation
- Shogo Mochizuki
Information Patent Grant
Three-dimensional field effect device
- Patent number 12,237,325
- Issue date Feb 25, 2025
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual strained semiconductor substrate and patterning
- Patent number 12,191,208
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moon-shaped bottom spacer for vertical transport field effect trans...
- Patent number 12,154,985
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall epitaxy encapsulation for nanosheet I/O device
- Patent number 12,142,636
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform interfacial layer on vertical fin sidewalls of vertical tra...
- Patent number 12,132,098
- Issue date Oct 29, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-step nanosheet structure for stacked field-effect transistors
- Patent number 12,119,264
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with wrap-around contact structure
- Patent number 12,119,346
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor and method of forming the vertical transistor
- Patent number 12,046,673
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Fee Li Lie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical transistor with late source/drain epitaxy
- Patent number 11,996,480
- Issue date May 28, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of nanosheet transistor channels using epitaxial growth
- Patent number 11,984,493
- Issue date May 14, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor devices with reduced top sourc...
- Patent number 11,978,783
- Issue date May 7, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with punchthrough stop region
- Patent number 11,923,438
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained superlattice
- Patent number 11,848,357
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanosheet semiconductor devices with optimal crysta...
- Patent number 11,837,604
- Issue date Dec 5, 2023
- International Business Machine Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain for fin field effect transistors
- Patent number 11,830,946
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,817,502
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall epitaxy encapsulation for nanosheet I/O device
- Patent number 11,804,522
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moon-shaped bottom spacer for vertical transport field effect trans...
- Patent number 11,757,036
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source drain contact formation with trench metastabl...
- Patent number 11,562,906
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor and method of forming the vertical transistor
- Patent number 11,520,768
- Issue date Dec 6, 2022
- International Business Machines Corporation
- Fee Li Lie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical transistor having bottom spacers on source/drain regions w...
- Patent number 11,482,612
- Issue date Oct 25, 2022
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors with various gate lengths
- Patent number 11,476,362
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor devices with self-aligned sour...
- Patent number 11,424,343
- Issue date Aug 23, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor devices with self-aligned sour...
- Patent number 11,380,778
- Issue date Jul 5, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor having abrupt junctions between the channel na...
- Patent number 11,355,649
- Issue date Jun 7, 2022
- INTERNATIONAI BUSINESS MACHINES CORPORATION
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium FinFET with low gate induced drain leakage current
- Patent number 11,316,015
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW EXTERNAL RESISTANCE LAST NANOSHEET
- Publication number 20250089327
- Publication date Mar 13, 2025
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN
- Publication number 20250056864
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT
- Publication number 20240429097
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...
- Publication number 20240421035
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- Publication number 20240421191
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN
- Publication number 20240413201
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED BACKSIDE CONTACT
- Publication number 20240413214
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY
- Publication number 20240395816
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT FORMATION
- Publication number 20240321959
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...
- Publication number 20240290860
- Publication date Aug 29, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20240203991
- Publication date Jun 20, 2024
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH...
- Publication number 20240204100
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
- Publication number 20240178292
- Publication date May 30, 2024
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL
- Publication number 20240170538
- Publication date May 23, 2024
- International Business Machines Corporation
- Liqiao Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET WITH GRADED SILICON GERMANIUM LAYER UNDER ISOLATION REGIO...
- Publication number 20240145238
- Publication date May 2, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER
- Publication number 20240145578
- Publication date May 2, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
- Publication number 20240128346
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-FET SRAM CELL WITH BOTTOM pFET
- Publication number 20240121933
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Gen Tsutsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE
- Publication number 20240120380
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
- Publication number 20240113176
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL
- Publication number 20240113192
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
- Publication number 20240112985
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICON...
- Publication number 20240113193
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Everywhere Based Self-Aligned Direct Backside Contact
- Publication number 20240105799
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE NANOSHEET TUNNEL TRANSISTORS
- Publication number 20240096947
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Kirsten Emilie Moselund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS
- Publication number 20240088252
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT THAT REDUCES RISK OF CONTACT TO GATE SHORT
- Publication number 20240079446
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE
- Publication number 20240014266
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20240006244
- Publication date Jan 4, 2024
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ROBUST INNER SPACER
- Publication number 20240006496
- Publication date Jan 4, 2024
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS

Shogo Mochizuki

Person

Patents Grantslast 30 patents

High aspect ratio contact structure with multiple metal stacks

Source or drain template for reducing strain loss in spaced-apart n...

Semiconductor device with strained channel

Isolation between vertically stacked nanosheet devices

Three-dimensional field effect device

Dual strained semiconductor substrate and patterning

Moon-shaped bottom spacer for vertical transport field effect trans...

Sidewall epitaxy encapsulation for nanosheet I/O device

Uniform interfacial layer on vertical fin sidewalls of vertical tra...

Non-step nanosheet structure for stacked field-effect transistors

Vertical field-effect transistor with wrap-around contact structure

Vertical transistor and method of forming the vertical transistor

Vertical transistor with late source/drain epitaxy

Formation of nanosheet transistor channels using epitaxial growth

Vertical fin field effect transistor devices with reduced top sourc...

Field-effect transistor with punchthrough stop region

Strained superlattice

Forming stacked nanosheet semiconductor devices with optimal crysta...

Bottom source/drain for fin field effect transistors

Three-dimensional field effect device

Sidewall epitaxy encapsulation for nanosheet I/O device

Moon-shaped bottom spacer for vertical transport field effect trans...

Low resistance source drain contact formation with trench metastabl...

Vertical transistor and method of forming the vertical transistor

Vertical transistor having bottom spacers on source/drain regions w...

Vertical transistors with various gate lengths

Vertical fin field effect transistor devices with self-aligned sour...

Vertical fin field effect transistor devices with self-aligned sour...

Nanosheet transistor having abrupt junctions between the channel na...

Silicon germanium FinFET with low gate induced drain leakage current

Patents Applicationslast 30 patents

LOW EXTERNAL RESISTANCE LAST NANOSHEET

SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN

SELF-ALIGNED BACKSIDE CONTACT

TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN

SELF ALIGNED BACKSIDE CONTACT

HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY

BACKSIDE CONTACT FORMATION

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...

STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH D...

VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH...

SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS

SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL

NANOSHEET WITH GRADED SILICON GERMANIUM LAYER UNDER ISOLATION REGIO...

NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

STACKED-FET SRAM CELL WITH BOTTOM pFET

FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICON...

Epitaxy Everywhere Based Self-Aligned Direct Backside Contact

COMPOSITE NANOSHEET TUNNEL TRANSISTORS

GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS

BACKSIDE CONTACT THAT REDUCES RISK OF CONTACT TO GATE SHORT

SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE

NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE WITH ROBUST INNER SPACER