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Shogo Mochizuki
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Clifton Park, NY, US
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Patents Grants
last 30 patents
Information
Patent Grant
Formation of nanosheet transistor channels using epitaxial growth
Patent number
11,984,493
Issue date
May 14, 2024
International Business Machines Corporation
Nicolas Loubet
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical fin field effect transistor devices with reduced top sourc...
Patent number
11,978,783
Issue date
May 7, 2024
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field-effect transistor with punchthrough stop region
Patent number
11,923,438
Issue date
Mar 5, 2024
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Strained superlattice
Patent number
11,848,357
Issue date
Dec 19, 2023
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Forming stacked nanosheet semiconductor devices with optimal crysta...
Patent number
11,837,604
Issue date
Dec 5, 2023
International Business Machine Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bottom source/drain for fin field effect transistors
Patent number
11,830,946
Issue date
Nov 28, 2023
International Business Machines Corporation
Heng Wu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Three-dimensional field effect device
Patent number
11,817,502
Issue date
Nov 14, 2023
International Business Machines Corporation
Huimei Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Sidewall epitaxy encapsulation for nanosheet I/O device
Patent number
11,804,522
Issue date
Oct 31, 2023
International Business Machines Corporation
Ruqiang Bao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Moon-shaped bottom spacer for vertical transport field effect trans...
Patent number
11,757,036
Issue date
Sep 12, 2023
International Business Machines Corporation
Ruilong Xie
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low resistance source drain contact formation with trench metastabl...
Patent number
11,562,906
Issue date
Jan 24, 2023
International Business Machines Corporation
Oleg Gluschenkov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical transistor and method of forming the vertical transistor
Patent number
11,520,768
Issue date
Dec 6, 2022
International Business Machines Corporation
Fee Li Lie
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Vertical transistor having bottom spacers on source/drain regions w...
Patent number
11,482,612
Issue date
Oct 25, 2022
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical transistors with various gate lengths
Patent number
11,476,362
Issue date
Oct 18, 2022
International Business Machines Corporation
Juntao Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical fin field effect transistor devices with self-aligned sour...
Patent number
11,424,343
Issue date
Aug 23, 2022
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical fin field effect transistor devices with self-aligned sour...
Patent number
11,380,778
Issue date
Jul 5, 2022
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Nanosheet transistor having abrupt junctions between the channel na...
Patent number
11,355,649
Issue date
Jun 7, 2022
INTERNATIONAI BUSINESS MACHINES CORPORATION
Choonghyun Lee
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon germanium FinFET with low gate induced drain leakage current
Patent number
11,316,015
Issue date
Apr 26, 2022
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gate metal patterning to avoid gate stack attack due to excessive w...
Patent number
11,276,576
Issue date
Mar 15, 2022
International Business Machines Corporation
Junli Wang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bottom source/drain for fin field effect transistors
Patent number
11,276,781
Issue date
Mar 15, 2022
International Business Machines Corporation
Heng Wu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fin field-effect transistors with enhanced strain and reduced paras...
Patent number
11,257,934
Issue date
Feb 22, 2022
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Maskless top source/drain epitaxial growth on vertical transport fi...
Patent number
11,244,870
Issue date
Feb 8, 2022
International Business Machines Corporation
Choonghyun Lee
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical transport field effect transistor structure with self-alig...
Patent number
11,239,360
Issue date
Feb 1, 2022
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Uniform interfacial layer on vertical fin sidewalls of vertical tra...
Patent number
11,227,937
Issue date
Jan 18, 2022
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Three-dimensional field effect device
Patent number
11,222,981
Issue date
Jan 11, 2022
International Business Machines Corporation
Huimei Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a top epitaxy source/drain structure for a vertic...
Patent number
11,189,724
Issue date
Nov 30, 2021
International Business Machines Corporation
Dexin Kong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Differing device characteristics on a single wafer by selective etch
Patent number
11,183,427
Issue date
Nov 23, 2021
International Business Machines Corporation
Huimei Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical transport FET with bottom source and drain extensions
Patent number
11,183,583
Issue date
Nov 23, 2021
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Three-dimensional field effect device
Patent number
11,183,593
Issue date
Nov 23, 2021
International Business Machines Corporation
Huimei Zhou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Wrap around contact formation for VTFET
Patent number
11,164,947
Issue date
Nov 2, 2021
International Business Machines Corporation
Heng Wu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Nanosheet transistor having a strained channel with strain-preservi...
Patent number
11,164,958
Issue date
Nov 2, 2021
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
NANOSHEET WITH GRADED SILICON GERMANIUM LAYER UNDER ISOLATION REGIO...
Publication number
20240145238
Publication date
May 2, 2024
International Business Machines Corporation
Reinaldo Vega
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER
Publication number
20240145578
Publication date
May 2, 2024
International Business Machines Corporation
Reinaldo Vega
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
Publication number
20240128346
Publication date
Apr 18, 2024
International Business Machines Corporation
Julien Frougier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STACKED-FET SRAM CELL WITH BOTTOM pFET
Publication number
20240121933
Publication date
Apr 11, 2024
International Business Machines Corporation
Gen Tsutsui
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE
Publication number
20240120380
Publication date
Apr 11, 2024
International Business Machines Corporation
Chen Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
Publication number
20240112985
Publication date
Apr 4, 2024
International Business Machines Corporation
Ruilong Xie
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
Publication number
20240113176
Publication date
Apr 4, 2024
International Business Machines Corporation
Ruilong Xie
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL
Publication number
20240113192
Publication date
Apr 4, 2024
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICON...
Publication number
20240113193
Publication date
Apr 4, 2024
International Business Machines Corporation
Tao Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Epitaxy Everywhere Based Self-Aligned Direct Backside Contact
Publication number
20240105799
Publication date
Mar 28, 2024
International Business Machines Corporation
Ruilong Xie
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
COMPOSITE NANOSHEET TUNNEL TRANSISTORS
Publication number
20240096947
Publication date
Mar 21, 2024
International Business Machines Corporation
Kirsten Emilie Moselund
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS
Publication number
20240088252
Publication date
Mar 14, 2024
International Business Machines Corporation
Andrew M. Greene
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BACKSIDE CONTACT THAT REDUCES RISK OF CONTACT TO GATE SHORT
Publication number
20240079446
Publication date
Mar 7, 2024
International Business Machines Corporation
Ruilong Xie
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SIDEWALL EPITAXY ENCAPSULATION FOR NANOSHEET I/O DEVICE
Publication number
20240014266
Publication date
Jan 11, 2024
International Business Machines Corporation
Ruqiang Bao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS
Publication number
20240006244
Publication date
Jan 4, 2024
International Business Machines Corporation
SHOGO MOCHIZUKI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE WITH ROBUST INNER SPACER
Publication number
20240006496
Publication date
Jan 4, 2024
International Business Machines Corporation
SHOGO MOCHIZUKI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...
Publication number
20230420457
Publication date
Dec 28, 2023
International Business Machines Corporation
Julien Frougier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GATE-ALL-AROUND TRANSISTORS WITH HYBRID ORIENTATION
Publication number
20230411531
Publication date
Dec 21, 2023
International Business Machines Corporation
Nicolas Jean Loubet
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH STRAINED CHANNEL
Publication number
20230411523
Publication date
Dec 21, 2023
International Business Machines Corporation
SHOGO MOCHIZUKI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANS...
Publication number
20230402542
Publication date
Dec 14, 2023
International Business Machines Corporation
Ruilong XIE
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STAIRCASE STACKED FIELD EFFECT TRANSISTOR
Publication number
20230402520
Publication date
Dec 14, 2023
International Business Machines Corporation
Sanjay C. Mehta
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STACKED FIELD EFFECT TRANSISTORS WITH REDUCED GATE-TO-DRAIN PARASIT...
Publication number
20230317793
Publication date
Oct 5, 2023
International Business Machines Corporation
SHOGO MOCHIZUKI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SELF-ALIGNED BACKSIDE TRENCH EPITAXY FOR LOW CONTACT RESISTIVITY
Publication number
20230317782
Publication date
Oct 5, 2023
International Business Machines Corporation
Ruilong Xie
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH ASPECT RATIO CONTACT STRUCTURE WITH MULTIPLE METAL STACKS
Publication number
20230317802
Publication date
Oct 5, 2023
International Business Machines Corporation
Junli Wang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BOTTOM DIELECTRIC ISOLATION FOR VERTICALLY STACKED DEVICES
Publication number
20230307495
Publication date
Sep 28, 2023
International Business Machines Corporation
Sanjay C. Mehta
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HORIZONTALLY STACKED NANOSHEET GATE ALL AROUND DEVICE STRUCTURE
Publication number
20230307521
Publication date
Sep 28, 2023
International Business Machines Corporation
SHOGO MOCHIZUKI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ISOLATION BETWEEN VERTICALLY STACKED NANOSHEET DEVICES
Publication number
20230290776
Publication date
Sep 14, 2023
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CONTACT RESISTANCE OF NANOSHEET TRANSISTOR
Publication number
20230282748
Publication date
Sep 7, 2023
International Business Machines Corporation
Shogo Mochizuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
VERTICALLY STACKED FET WITH STRAINED CHANNEL
Publication number
20230260971
Publication date
Aug 17, 2023
International Business Machines Corporation
SHOGO MOCHIZUKI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STRAINED SUPERLATTICE
Publication number
20230238431
Publication date
Jul 27, 2023
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS