Shoji Wada

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Normally-on gallium nitride based transistor with p-type gate
- Patent number 11,978,790
- Issue date May 7, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming metal contacts in the barrier layer of a group II...
- Patent number 10,707,323
- Issue date Jul 7, 2020
- Texas Instruments Incorporated
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal contacts in the barrier layer of a group II...
- Patent number 10,374,057
- Issue date Aug 6, 2019
- Texas Instruments Incorporated
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal contacts in the barrier layer of a group II...
- Patent number 9,818,839
- Issue date Nov 14, 2017
- Texas Instruments Incorporated
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal contacts in the barrier layer of a group II...
- Patent number 9,443,737
- Issue date Sep 13, 2016
- Texas Instruments Incorporated
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20240274705
- Publication date Aug 15, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20220173234
- Publication date Jun 2, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP II...
- Publication number 20190288090
- Publication date Sep 19, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP II...
- Publication number 20180033865
- Publication date Feb 1, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP II...
- Publication number 20160351685
- Publication date Dec 1, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Metal Contacts With Low Contact Resistances in a...
- Publication number 20140302673
- Publication date Oct 9, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Metal Contacts in the Barrier Layer of a Group II...
- Publication number 20140302672
- Publication date Oct 9, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Yoshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Normally-on gallium nitride based transistor with p-type gate

Method of forming metal contacts in the barrier layer of a group II...

Method of forming metal contacts in the barrier layer of a group II...

Method of forming metal contacts in the barrier layer of a group II...

Method of forming metal contacts in the barrier layer of a group II...

Patents Applicationslast 30 patents

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP II...

METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP II...

METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP II...

Method of Forming Metal Contacts With Low Contact Resistances in a...

Method of Forming Metal Contacts in the Barrier Layer of a Group II...