Shozo Muraoka

Person

Maebashi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for manufacturing a silicon single crystal hav...
- Patent number 6,364,947
- Issue date Apr 2, 2002
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few crystal defects
- Patent number 6,348,180
- Issue date Feb 19, 2002
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal silicon wafer having few crystal defects and method...
- Patent number 6,334,896
- Issue date Jan 1, 2002
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few defects wherein nitrogen is...
- Patent number 6,261,361
- Issue date Jul 17, 2001
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing low defect silicon single crystal doped with n...
- Patent number 6,197,109
- Issue date Mar 6, 2001
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing a silicon single crystal hav...
- Patent number 6,159,438
- Issue date Dec 12, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal having few crystal de...
- Patent number 6,120,598
- Issue date Sep 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few crystal defects, and method...
- Patent number 6,120,599
- Issue date Sep 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few defects wherein nitrogen is...
- Patent number 6,077,343
- Issue date Jun 20, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few crystal defects, and method...
- Patent number 6,066,306
- Issue date May 23, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal holding apparatus
- Patent number 6,053,975
- Issue date Apr 25, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal having few crystal de...
- Patent number 6,048,395
- Issue date Apr 11, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal having few crystal de...
- Patent number 6,027,562
- Issue date Feb 22, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon single crystal
- Patent number 5,976,246
- Issue date Nov 2, 1999
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing a silicon single crystal hav...
- Patent number 5,968,264
- Issue date Oct 19, 1999
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing single crystal of silicon
- Patent number 5,968,266
- Issue date Oct 19, 1999
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling method and apparatus
- Patent number 5,964,941
- Issue date Oct 12, 1999
- Shin-Etsu Handotai., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed crystal holder
- Patent number 5,948,164
- Issue date Sep 7, 1999
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of holding a monocrystal, and method of growing the same
- Patent number 5,911,821
- Issue date Jun 15, 1999
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling method
- Patent number 5,882,397
- Issue date Mar 16, 1999
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for holding and pulling single crystal
- Patent number 5,871,578
- Issue date Feb 16, 1999
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH

Shozo Muraoka

Person

Patents Grantslast 30 patents

Method and apparatus for manufacturing a silicon single crystal hav...

Silicon single crystal wafer having few crystal defects

Single-crystal silicon wafer having few crystal defects and method...

Silicon single crystal wafer having few defects wherein nitrogen is...

Method for producing low defect silicon single crystal doped with n...

Method and apparatus for manufacturing a silicon single crystal hav...

Method for producing a silicon single crystal having few crystal de...

Silicon single crystal wafer having few crystal defects, and method...

Silicon single crystal wafer having few defects wherein nitrogen is...

Silicon single crystal wafer having few crystal defects, and method...

Crystal holding apparatus

Method for producing a silicon single crystal having few crystal de...

Method for producing a silicon single crystal having few crystal de...

Process for producing silicon single crystal

Method and apparatus for manufacturing a silicon single crystal hav...

Apparatus for manufacturing single crystal of silicon

Crystal pulling method and apparatus

Seed crystal holder

Method of holding a monocrystal, and method of growing the same

Crystal pulling method

Methods for holding and pulling single crystal