Shu Kuan

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,148,794
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,119,394
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 12,021,143
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 11,817,499
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming fully strained channels
- Patent number 11,670,681
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 11,404,574
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,393,898
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,367,784
- Issue date Jun 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 10,930,781
- Issue date Feb 23, 2021
- Taiwan Semiconductor Manufacturing Co. LTD
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 10,510,889
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for detecting presence and location of defects in a substrate
- Patent number 9,917,189
- Issue date Mar 13, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei Hung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240371982
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20230378359
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FULLY STRAINED CHANNELS
- Publication number 20230317795
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20220352374
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20220328621
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20220320321
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Fully Strained Channels
- Publication number 20220223690
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20210391450
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20210273047
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20210175359
- Publication date Jun 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20200111911
- Publication date Apr 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel
- Publication number 20190165175
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Detecting Presence and Location of Defects in a Substrate
- Publication number 20170033218
- Publication date Feb 2, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei Hung
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Method of manufacturing a semiconductor device and a semiconductor...

P-type strained channel in a fin field effect transistor (FinFET) d...

P-type strained channel in a fin field effect transistor (FinFET) d...

Method of forming fully strained channels

P-type strained channel in a fin field effect transistor (FinFET) d...

Method of manufacturing a semiconductor device and a semiconductor...

Method of manufacturing a semiconductor device and a semiconductor...

P-type strained channel in a fin field effect transistor (FinFET) d...

P-type strained channel in a fin field effect transistor (FinFET) d...

Method for detecting presence and location of defects in a substrate

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

METHOD OF FORMING FULLY STRAINED CHANNELS

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Method of Forming Fully Strained Channels

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

P-Type Strained Channel

Method for Detecting Presence and Location of Defects in a Substrate