Shu-Uei JANG

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Dummy gate cutting process and resulting gate structures
- Patent number 12,206,011
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,170,229
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,107,013
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,046,597
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,046,663
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,996,466
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 11,990,341
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 11,967,533
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,923,359
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and methods of forming thereof
- Patent number 11,894,277
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 11,855,179
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,848,240
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate cutting process and resulting gate structures
- Patent number 11,757,019
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin Field-Effect Transistor and method of forming the same
- Patent number 11,626,510
- Issue date Apr 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 11,527,445
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 11,508,582
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and methods of forming thereof
- Patent number 11,437,287
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,329,140
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate cutting process and resulting gate structures
- Patent number 11,251,284
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,233,139
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFet) device stru...
- Patent number 11,063,043
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device and semiconductor device
- Patent number 10,879,074
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,861,746
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 10,714,347
- Issue date Jul 14, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor structure and semiconductor device
- Patent number 10,672,613
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure and method fo...
- Patent number 10,515,952
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 10,276,449
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL ETCHING WITH REDUCED TILT ANGLE
- Publication number 20240429064
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE CUTTING PROCESS AND RESULTING GATE STRUCTURES
- Publication number 20240421211
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387283
- Publication date Nov 21, 2024
- Taiwan Semicondutor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240363735
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240347534
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240290869
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESSES
- Publication number 20240290620
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20240178224
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shu WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gates and Methods of Forming Thereof
- Publication number 20240153827
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE
- Publication number 20240128126
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240097007
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240047458
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230386932
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dummy Gate Cutting Process and Resulting Gate Structures
- Publication number 20230361197
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor and Method of Forming The Same
- Publication number 20230231038
- Publication date Jul 20, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230197521
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230066828
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gates and Methods of Forming Thereof
- Publication number 20230005797
- Publication date Jan 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220415716
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220393018
- Publication date Dec 8, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Processes
- Publication number 20220384616
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220359306
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220262920
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufactuing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dummy Gate Cutting Process and Resulting Gate Structures
- Publication number 20220173225
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220149181
- Publication date May 12, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220068720
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210408263
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20210343711
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shu WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20210335674
- Publication date Oct 28, 2021
- Taiwan Semicondutor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gates and Methods of Forming Thereof
- Publication number 20210242093
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS

Shu-Uei JANG

Person

Patents Grantslast 30 patents

Dummy gate cutting process and resulting gate structures

Semiconductor devices and methods of manufacturing thereof

Semiconductor devices and methods of manufacturing thereof

Fin field-effect transistor and method of forming the same

Fin field-effect transistor and method of forming the same

Semiconductor device and method of manufacture

Cut metal gate processes

Semiconductor devices and methods of manufacturing thereof

Method for forming fin field effect transistor (FinFET) device stru...

Transistor gates and methods of forming thereof

Semiconductor devices and methods of manufacturing thereof

Method of manufacturing a semiconductor device

Dummy gate cutting process and resulting gate structures

Fin Field-Effect Transistor and method of forming the same

Semiconductor devices and methods of manufacturing thereof

Cut metal gate processes

Transistor gates and methods of forming thereof

Semiconductor device and method of manufacture

Dummy gate cutting process and resulting gate structures

Fin field-effect transistor and method of forming the same

Method for forming fin field effect transistor (FinFet) device stru...

Method of forming semiconductor device and semiconductor device

Method of manufacturing a semiconductor device

Cut metal gate processes

Method of forming semiconductor structure and semiconductor device

Fin field effect transistor (FinFET) device structure and method fo...

Method for forming fin field effect transistor (FinFET) device stru...

Patents Applicationslast 30 patents

METAL ETCHING WITH REDUCED TILT ANGLE

DUMMY GATE CUTTING PROCESS AND RESULTING GATE STRUCTURES

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

CUT METAL GATE PROCESSES

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

Transistor Gates and Methods of Forming Thereof

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Dummy Gate Cutting Process and Resulting Gate Structures

Fin Field-Effect Transistor and Method of Forming The Same

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Transistor Gates and Methods of Forming Thereof

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Cut Metal Gate Processes

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Semiconductor Device and Method of Manufacture

Dummy Gate Cutting Process and Resulting Gate Structures

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Transistor Gates and Methods of Forming Thereof