Shu-Wei Vanessa Chung

Person

Taichung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor in nanosheet
- Patent number 12,094,872
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit features with obtuse angles and method of formin...
- Patent number 12,087,715
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Standard cell design
- Patent number 12,073,165
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure with via extending across adjacent conducti...
- Patent number 11,967,550
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for inserting dummy capacitor structures
- Patent number 11,503,711
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit features with obtuse angles and method of formin...
- Patent number 11,495,558
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit features with obtuse angles and method forming same
- Patent number 10,861,807
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 9,570,584
- Issue date Feb 14, 2017
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih Hsiung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with reduced leakage
- Patent number 8,951,872
- Issue date Feb 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Vanessa Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with reduced leakage
- Patent number 8,664,719
- Issue date Mar 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Vanessa Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HVMOS devices and methods for forming the same
- Patent number 8,450,808
- Issue date May 28, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gate stack integration of complementary MOS...
- Patent number 8,373,219
- Issue date Feb 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with reduced leakage
- Patent number 8,350,327
- Issue date Jan 8, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Vanessa Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gate stack integration of complementary MOS...
- Patent number 8,173,499
- Issue date May 8, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPACITOR IN NANOSHEET
- Publication number 20240387518
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DRIVER DEVICE, LAYOUT, AND METHOD
- Publication number 20240387537
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT FEATURES WITH OBTUSE ANGLES AND METHOD OF FORMIN...
- Publication number 20240363561
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STANDARD CELL DESIGN
- Publication number 20240362392
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH VIA EXTENDING ACROSS ADJACENT CONDUCTI...
- Publication number 20240234301
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Features with Obtuse Angles and Method of Formin...
- Publication number 20230116270
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Standard Cell Design
- Publication number 20220405457
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Dummy Insertion Method
- Publication number 20220357949
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CAPACITOR IN NANOSHEET
- Publication number 20220278093
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210366824
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dummy Insertion Method
- Publication number 20210100103
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Integrated Circuit Features with Obtuse Angles and Method of Formin...
- Publication number 20210074656
- Publication date Mar 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Integrated Circuit Features With Obtuse Angles and Method Forming Same
- Publication number 20200161260
- Publication date May 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20160049464
- Publication date Feb 18, 2016
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIH HSIUNG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Device with Reduced Leakage
- Publication number 20140179080
- Publication date Jun 26, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Vanessa Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Device with Reduced Leakage
- Publication number 20130119466
- Publication date May 16, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Vanessa Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating a Gate Stack Integration of Complementary MOS...
- Publication number 20120273890
- Publication date Nov 1, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Stack Integration of Complementary MOS Devices
- Publication number 20100317181
- Publication date Dec 16, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH REDUCED LEAKAGE
- Publication number 20100052057
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Wei Vanessa Chung
- H01 - BASIC ELECTRIC ELEMENTS

Shu-Wei Vanessa Chung

Person

Patents Grantslast 30 patents

Capacitor in nanosheet

Integrated circuit features with obtuse angles and method of formin...

Standard cell design

Semiconductor structure with via extending across adjacent conducti...

Method for inserting dummy capacitor structures

Integrated circuit features with obtuse angles and method of formin...

Integrated circuit features with obtuse angles and method forming same

Semiconductor structure and manufacturing method thereof

High voltage device with reduced leakage

High voltage device with reduced leakage

HVMOS devices and methods for forming the same

Method of fabricating a gate stack integration of complementary MOS...

High voltage device with reduced leakage

Method of fabricating a gate stack integration of complementary MOS...

Patents Applicationslast 30 patents

CAPACITOR IN NANOSHEET

INTEGRATED CIRCUIT DRIVER DEVICE, LAYOUT, AND METHOD

INTEGRATED CIRCUIT FEATURES WITH OBTUSE ANGLES AND METHOD OF FORMIN...

STANDARD CELL DESIGN

SEMICONDUCTOR STRUCTURE WITH VIA EXTENDING ACROSS ADJACENT CONDUCTI...

Integrated Circuit Features with Obtuse Angles and Method of Formin...

Standard Cell Design

Dummy Insertion Method

CAPACITOR IN NANOSHEET

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

Dummy Insertion Method

Integrated Circuit Features with Obtuse Angles and Method of Formin...

Integrated Circuit Features With Obtuse Angles and Method Forming Same

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

High Voltage Device with Reduced Leakage

High Voltage Device with Reduced Leakage

Method of Fabricating a Gate Stack Integration of Complementary MOS...

Gate Stack Integration of Complementary MOS Devices

HIGH VOLTAGE DEVICE WITH REDUCED LEAKAGE