Shu-Ya Hsu

Person

Yun-Lin Hsien, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming multiple oxide layers with different thicknesses...
- Patent number 6,703,322
- Issue date Mar 9, 2004
- Macronix International Co. Ltd.
- June-Min Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing stress of sidewall oxide layer of shallow trenc...
- Patent number 6,602,792
- Issue date Aug 5, 2003
- Macronix International Co., Ltd.
- Shu-Ya Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing stress and encroachment of sidewall oxide layer...
- Patent number 6,503,815
- Issue date Jan 7, 2003
- Macronix International Co., Ltd.
- Shu-Ya Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for making the gate dielectric layer by oxygen radicals and...
- Publication number 20040147136
- Publication date Jul 29, 2004
- MACRONIX INTERNATIONAL CO., LTD
- Cheng-Shun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MULTIPLE OXIDE LAYERS WITH DIFFERENT THICKNESSES...
- Publication number 20040023512
- Publication date Feb 5, 2004
- June-Min Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of stress and damage elimination during formation of isolati...
- Publication number 20030194871
- Publication date Oct 16, 2003
- MACRONIX INTERNATIONAL CO., LTD
- Shu-Ya Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming sidewall oxide layer of shallow trench isolation...
- Publication number 20030194870
- Publication date Oct 16, 2003
- MACRONIX INTERNATIONAL CO., LTD
- Shu-Ya Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming sacrificial oxide layer
- Publication number 20030027403
- Publication date Feb 6, 2003
- MACRONIX INTERNATIONAL CO., LTD
- Shu-Ya Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing stress of sidewall oxide layer of shallow trenc...
- Publication number 20030027402
- Publication date Feb 6, 2003
- MACRONIX INTERNATIONAL CO., LTD
- Shu-Ya Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing stress and encroachment effect of isolation devi...
- Publication number 20030017678
- Publication date Jan 23, 2003
- MACRONIX INTERNATIONAL CO., LTD
- Shu-Ya Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of forming multiple oxide layers with different thicknesses...

Method for reducing stress of sidewall oxide layer of shallow trenc...

Method for reducing stress and encroachment of sidewall oxide layer...

Patents Applicationslast 30 patents

Method for making the gate dielectric layer by oxygen radicals and...

METHOD OF FORMING MULTIPLE OXIDE LAYERS WITH DIFFERENT THICKNESSES...

Method of stress and damage elimination during formation of isolati...

Method for forming sidewall oxide layer of shallow trench isolation...

Method for forming sacrificial oxide layer

Method for reducing stress of sidewall oxide layer of shallow trenc...

Method of reducing stress and encroachment effect of isolation devi...